HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
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IS181
HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
DESCRIPTION IS181 optically coupled isolator consisting infrared light emitting diode silicon photo transistor space efficient dual line plastic package. FEATURES
Marked FPT1.
Current Transfer Ratio MIN. Isolation Voltage (3.75kVRMS ,5.3kVPK electrical parameters 100% tested Custom electrical selections available Drop replacement Toshiba TLP181
APPLICATIONS Computer terminals Industrial systems controllers Measuring instruments Signal transmission between systems different potentials impedances
ISOCOM COMPONENTS Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 Tel: (01429) 863609 :(01429) 863581
19/4/01
ISOCOM 1024 Greenville Ave, Suite 240, Allen, 75002 Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
DB92844-AAS/A3
ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C 125°C Operating Temperature -30°C 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 70mW
OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation
(derate linearly 2.26mW/°C above 25°C)
150mW
170mW
ELECTRICAL CHARACTERISTICS 25°C Unless otherwise noted PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Coupled Current Transfer Ratio (CTR)
Optiional Grades: IS181A IS181B IS181C IS181D
UNITS
TEST CONDITION 20mA 10µA 0.1mA 10µA 20mA note note 500V (note 2mA,
Output
Collector-emitter Saturation VoltageVCE (SAT) Input Output Isolation Voltage VISO 3750 5300
VRMS
Input-output Isolation Resistance RISO 5x1010 Output Rise Time Output Fall Time Note
Measured with input leads shorted together output leads shorted together.
19/4/01
DB92844-AAS/A3
TAPING DIMENSIONS
Description Tape wide Pitch sprocket holes Distance compartment Distance compartment compartment
Symbol
Dimensions inches .217 .079 .315
19/04/01
Appendix Mini Flat Pack FPT1-AAS/A1
CHARACTERISTIC CURVES
Fig.1 Forword Current Ambient Temperatute
Fig.2 Collector Power Dissiption Ambient Temperature
Collector Power dissipation (mW)
Forward current (mA)
Ambient temperature
Ambient temperature
Fig.3 Collector-emitter Saturation Voltage Forward Current
Fig.4 Forward Current Forward Voltage
Ic=0.5mA
Collecotr-emitter saturation voltage (sat)
Forward current (mA)
Forward current (mA)
Forward voltage
Fig.5 Current Transfer Ratio Forward Current
Fig.6 Collector Current Collector-emitter Voltage
30mA 25mA
Current transfer ratio
Forward current (mA)
Collector current (mA)
20mA 15mA 10mA Collector-em itter voltage Pc(MAX.)
19/04/01
Appendix Mini Flat Pack FPT1-AAS/A1
CHARACTERISTIC CURVES
Fig.7 Relative Current Transfer Ratio Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage Ambient Temperature
0.10 20mA
Collector-emitter saturation voltage (sat)
Relative current transfer ratio
0.08
0.06
0.04
0.02
Ambient temperature
Ambient temperature
Fig.9 Collector Dark Current Ambient Temperature
10000
Fig.10 Response Time Load Resistance
(nA)
Response time
1000
Collector dark current
0.05
Ambient temperature
Load resistance
Fig.11 Frequency Response
Test Circuit Response Time
Input Output Output
Input
Voltage gain (dB)
Test Circuit Frequency Response
Output
Frequency (kHz)
19/04/01
Appendix Mini Flat Pack FPT1-AAS/A1
TEMPERATURE PROFILE SOLDERING REFLOW
time soldering reflow recommended within condition temperature time profile shown below.
When using another soldering method such infrated lamp, temperature rise partially mold device. Keep temperature package device within condition above (1).
19/04/01
Appendix Mini Flat Pack FPT1-AAS/A1
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