VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70 25/70 IGBT, max. case operating temperature min. IEC-EN 60721-3-3 25/70 25/70 sin.; +150 (125) 2500 40/125/56 2880
SKiM® IGBT Modules SKiM
Preliminary Data
Inverse Diode
Characteristics
V(BR)CES VGE(th) ICES IGES VCEsat VCE, VCES (125)
VCES
min.
typ.
1,6(1,7) 1,35(1,85) 1,7(1,8) 1,4(1,4) 1,67
max. Units
0,135 0,185 0,034 0,045 °C/W °C/W °C/W °C/W
Features channel, homogeneous planar IGBT Silicon structure with buffer layer (non punch through) technology inductance case Fast soft inverse diodes Isolated (Direct Copper Bonded) ceramic plate Pressure contact technology thermal contacts Spring contact system attach driver control terminals Integrated temperature sensor Posts additional fixing Typical Applications Switched mode power supplies Three phase inverters motor speed control Switching (not linear use) electrical vehicles
Cies Coes Cres resistance, terminal-chip; 25(125) td(on) td(off) Eoff IRRM Rthjh RthjhD R'thjc R'thjcD ind. load RGon RGoff
Inverse Diode (125) (125) °C2) (125) °C2) IGBT diode IGBT diode
Thermal Characteristics
Temperature Sensor tolerance
unless otherwise specified VGEoff Measured chip level mounting instructions Corresponding value. This value cannot measured. only given comparison. Controlled Axial Lifetime Technology
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Eoff Eoff
Turn-on /-off energy (IC)
Fig. Turn-on /-off energy (RG)
1000
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tp=16µs 100µs
pulse
SKiM351GD063DM.xls
RGoff
10ms 1000 10000 ICpuls/IC
Fig. Maximum safe operating area (SOA) (VCE)
Fig. Turn-off safe operating area (RBSOA)
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allowed numbers short circuits: <1000 time between short circuits:
ICSC/IC
Fig. Safe operating area short circuit (VCE)
Fig. Rated current temperature (THS)
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Typ. output characteristic,
Fig. Typ. output characteristic,
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Fig. 6DWXUDWLRQ .KDUD.WHULVWL. ,*%7 &DO.XODWLRQ HOHPHQWV HTXDWLRQV
100V 300V
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Fig. WUDQVIHU .KDUD.WHULVWL.
ICpuls
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Cies
Coes QGate 1200 1500 1800 Cres
Fig. Typ. gate charge characteristic
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Fig. Typ. capacitances
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1000
SKiM351GD063DM.xls
tdoff
tdon
RGon RGon induct. load
10000
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tdoff 1000 tdon
induct. load
Fig. Typ. switch times
Tj=125°C, typ. Tj=25°C, typ.
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Fig. Typ. switch times gate resistor
Fig. Typ. diode forward characteristic
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0,01
0,001 single pulse ZthJHS 0,0001 0,00001 0,0001
D=0,50 0,20 0,10 0,05 0,02 0,01
0,01
0,001 ZthJHS 0,0001 0,00001 single pulse
D=0,50 0,20 0,10 0,05 0,02 0,01
0,001
0,01
0,0001
0,001
0,01
7UDQVLHQW WKHUPDO LPSHGDQ.H ,*%7 =WK-+6
7UDQVLHQW WKHUPDO LPSHGDQ.H LQYHUVH GLRGHV =WK-+6
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Dimensions Case outline circuit diagram
Mechanical Data
Symbol Conditions min.
heatsink, Units heatsink, Units terminals, Units terminals, Units (M5) (M6)
Values typ.
Units max.
5x9,81 lb.in. lb.in. m/s2
This electrostatic discharge sensitive device (ESDS). Please observe international standard 747-1, Chapter
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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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