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DS5753-2.2 June 2005 (LN24005) Double Side Cooling High Surge Cap
Top Searches for this datasheetDCR4100W42 DS5753-2.2 June 2005 (LN24005) Double Side Cooling High Surge Capability PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 3880A 53500A 1500V/µs 400A/µs APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches Higher dV/dt selections available VOLTAGE RATINGS Part Ordering Number Repetitive Peak Voltages VDRM VRRM 4200 4000 3500 3000 Conditions DCR4100W42 DCR4100W40 DCR4100W35 DCR4100W30 -40° 125° IDRM IRRM 200mA, VDRM, VRRM 10ms, VDSM VRSM VDRM VRRM 100V respectively Lower voltage grades available. Outline type code: (See Package Details further information) ORDERING INFORMATION When ordering, select required part number shown Voltage Ratings selection table. example: DCR4100W42 Note: Please complete part number when ordering quote this number future correspondence relating your order. Fig. Package outline www.dynexsemi.com DCR4100W42 SEMICONDUCTOR CURRENT RATINGS Tcase unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) Parameter Test Conditions Max. Units Mean on-state current value Continuous (direct) on-state current Half wave resistive load 3880 6095 5725 SURGE RATINGS Symbol ITSM Parameter Surge (non-repetitive) on-state current fusing Test Conditions 10ms half sine, Tcase 125° Max. 53.5 14.31 Units THERMAL MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance junction case Test Conditions Double side cooled Single side cooled Anode Cathode Rth(c-h) Thermal resistance case heatsink Clamping force 76kN (with mounting compound) Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Storage temperature range Clamping force Double side Single side Min. 68.0 Max. 0.00631 0.01115 0.01453 0.0014 0.0028 84.0 Units www.dynexsemi.com DCR4100W42 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse off-state current Max. linear rate rise off-state voltage Rate rise on-state current Test Conditions VRRM/VDRM, Tcase 125° VDRM, 125° gate open From VDRM IT(AV) Gate source 30V, 0.5µs, 125° Repetitive 50Hz Non-repetitive Min. Max. 1500 Units V/µs A/µs A/µs VT(TO) Threshold voltage level Threshold voltage High level 700A 4100A Tcase 125° 4100A 12000A Tcase 125° 700A 4100A Tcase 125° 4100A 12000A Tcase 125° VDRM, gate source 30V, 0.5µs, 0.83 0.1688 0.1263 On-state slope resistance level On-state slope resistance High level Delay time Turn-off time 125° 200V, dI/dt 1A/µs, dVDR/dt 20V/µs linear Stored charge Latching current Holding current 2000A, 125° dI/dt 1A/µs, 500A, 1500 4500 www.dynexsemi.com DCR4100W42 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS RATINGS Symbol Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current Test Conditions VDRM Tcase VDRM, Tcase 125° VDRM Tcase VDRM Tcase Max. Units CURVES 7000 Instantaneous on-state current 6000 5000 4000 3000 2000 1000 125° 125° 125° Instantaneous on-state voltage Fig.2 Maximum minimum on-state characteristics VEQUATION (IT) C.IT+D.IT 0.348967 0.066851 0.000102 0.003788 these values valid 125° 500A 10000A Where www.dynexsemi.com DCR4100W42 SEMICONDUCTOR Maximum case temperature, case 1000 2000 3000 4000 Mean power dissipation (kW) 1000 2000 3000 4000 5000 6000 5000 6000 Mean on-state current, IT(AV) Mean on-state current, IT(AV) Fig.3 On-state power dissipation sine wave Fig.4 Maximum permissible case temperature, double side cooled sine wave Maximum heatsink temperature, Heatsink 1000 2000 3000 4000 5000 6000 Mean power dissipation (kW) 1000 2000 3000 4000 5000 6000 7000 8000 d.c. Mean on-state current, IT(AV) Mean on-state current, IT(AV) Fig.5 Maximum permissible heatsink temperature, double side cooled sine wave Fig.6 On-state power dissipation rectangular wave www.dynexsemi.com DCR4100W42 SEMICONDUCTOR Maximum permissible case temperature Tcase (°C) 1000 2000 3000 4000 5000 6000 7000 8000 Maximum heatsik temperature Theatsink (oC) d.c. 1000 2000 3000 4000 5000 6000 7000 8000 d.c. Mean on-state current, IT(AV) Mean on-state current, IT(AV) Fig.7 Maximum permissible case temperature, double side cooled rectangular wave Double Side Cooling Fig.8 Maximum permissible heatsink temperature, double side cooled rectangular wave 0.8816 0.0106818 1.5197 0.0170581 1.4106 0.0158344 1.2993 0.058404 3.2398 0.2424644 2.4667 0.1786951 2.8048 0.3584979 5.7622 6.013 6.7451 3.6201 1.3305 1.1285 0.6312 15.364 3.9054 6.196 Double side cooled Anode side cooled Cathode side cooled C/kW) C/kW) C/kW) Thermal Impedance, Zth(j-c) °C/kW) Anode Side Cooling Cathode Sided Cooling 1-exp. (t/ti))] Rth(j-c) Conduction 0.001 0.01 Tables show increments thermal resistance th(j-c) when device operates conduction angles other than d.c. Double side cooling sine. 1.00 1.16 1.33 1.48 1.61 1.66 rect. 0.67 0.97 1.13 1.31 1.51 1.61 Anode Side Cooling sine. 0.94 1.08 1.23 1.37 1.47 1.52 rect. 0.64 0.91 1.06 1.22 1.38 1.47 Cathode Sided Cooling sine. 0.95 1.09 1.25 1.38 1.49 1.54 rect. 0.65 0.92 1.07 1.23 1.40 1.49 Time Fig.9 Maximum (limit) transient thermal impedance junction case C/kW) www.dynexsemi.com DCR4100W42 SEMICONDUCTOR Conditions: Tcase 125° Pulse width 10ms Conditions: Tcase= 125° half-sine wave Surge current, ITSM (kA) Surge current, ITSM- (kA) Number cycles Pulse width, (ms) Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current ITSM www.dynexsemi.com DCR4100W42 SEMICONDUCTOR PACKAGE DETAILS further package information, please contact Customer Services. dimensions unless stated otherwise. SCALE. ANGLE PROJECTION SCALE DOUBT HOLE 2.00 DEEP BOTH ELECTRODES) OFFSET (NOM.) GATE TUBE Device DCR1594SW28 DCR1595SW42 DCR1596SW52 DCR5450W22 DCR4910W28 DCR4100W42 DCR3640W52 DCR2950W65 DCR2450W85 Maximum Minimum Thickness Thickness (mm) (mm) 27.34 26.79 27.57 27.02 27.69 27.14 27.265 26.715 27.34 26.79 27.57 27.02 27.69 27.14 27.95 27.4 28.31 27.76 MAX. CATHODE NOM. GATE NOM. ANODE PACKAGE HEIGHT TABLE Lead length: 420mm Lead terminal connector: ring Package outline type code: Fig.15 Package outline www.dynexsemi.com DCR4100W42 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY Power Assembly group provide support service those customers requiring more than basic semiconductor, developed flexible range heatsink clamping systems line with advances device voltages current capability semiconductors. offer extensive range liquid cooled assemblies covering full range circuit designs general today. Assembly group offers high quality engineering support dedicated designing units satisfy growing needs customers. Using latest methods team design applications engineers provide Power Assembly Complete Solution (PACs). HEATSINKS Power Assembly group proprietary range extruded aluminium heatsinks which have been designed optimise performance Dynex semiconductors. Data with respect natural, forced liquid cooling (with flow rates) available request. further information device clamps, heatsinks assemblies, please contact your nearest sales representative Customer Services. Stresses above those listed this data sheet cause permanent damage device. extreme conditions, with semiconductors, this include potentially hazardous rupture package. Appropriate safety precautions should always followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR Doddington Road, Lincoln Lincolnshire, 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION RESALE. PRODUCED UNITED KINGDOM. This publication issued provide information only which (unless agreed Company writing) used, applied reproduced purpose form part order contract regarded representation relating products services concerned. warranty guarantee express implied made regarding capability, performance suitability product service. Company reserves right alter without prior notice specification, design price product service. Information concerning possible methods provided guide only does constitute guarantee that such methods will satisfactory specific piece equipment. user's responsibility fully determine performance suitability equipment using such information ensure that publication data used date been superseded. 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