NDM3000 three phase brushless motor driver consists three N-Channel P-
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NDM3000 Phase Brushless Motor Driver
NDM3000 three phase brushless motor driver consists three N-Channel P-Channel MOSFETs half bridge configuration. These devices produced using Fairchild's proprietary, high cell density DMOS technology. This very high density process tailored minimize on-state resistance which reduces power loss, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage phase motor driver such disk drive spindle motor control other half bridge applications.
Features
±3.0A, ±30V, 2.5W High density cell design extremely RDS(ON). High power current handling capability. Industry standard SOIC-16 surface mount package.
11,14
1,16 4,13
Absolute Maximum Ratings
Symbol VDSS VGSS Parameter
25°C unless otherwise noted
NDM3000
Units
Drain-Source Voltage (All Types) Gate-Source Voltage (All Types) Drain Current Q1+Q4 Q1+Q6 Q3+Q2 Continuous Q3+Q6 Q5+Q2 Q5+Q4 Pulsed
(Note (Note (Note (Note
Total Power Dissipation Q1+Q4 Q1+Q6 Q3+Q2 Q3+Q6 Q5+Q2 Q5+Q4
TJ,TSTG
Operating Storage Temperature Range
1997 Fairchild Semiconductor Corporation
NDM3000 Rev.
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Q1+Q4 Q1+Q6 Q3+Q2 Q3+Q6 Q5+Q2 Q5+Q4 (Note Thermal Resistance, Junction-to-Case Q1+Q4 Q1+Q6 Q3+Q2 Q3+Q6 Q5+Q2 Q5+Q4 (Note °C/W
°C/W
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Type Units CHARACTERISTICS BVDSS IDSS IGSS VGS(th) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ=55oC Gate Body Leakage, Forward
(Note
VGS, -250 TJ=125oC VGS, TJ=125oC
±100
CHARACTERISTICS
Gate Threshold Voltage
-0.7
-1.6 -1.25 0.125 0.18 0.16
-2.2 0.16 0.29 0.25 0.09 0.16 0.13
RDS(ON)
Static Drain-Source On-Resistance
-3.0 TJ=125oC -4.5 -1.0 TJ=125
0.07 0.09
ID(on)
On-State Drain Current
DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance
Reverse Transfer Capacitance
NDM3000 Rev.
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter
(Note
Conditions
Type
Units
SWITCHING CHARACTERISTICS tD(on) tD(off) Turn Delay Time Turn Rise Time
VGEN RGEN VGEN RGEN
Turn Delay Time
Turn Fall Time
Total Gate Charge Gate-Source Charge
-3.0
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time
-0.8
-1.2 -1.3
-3.0 ±3.0 A/µs
(Note (Note
J-TA
J-TA
RDS(ON
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 50oC/W when mounted cpper. 80oC/W when mounted 0.027 cpper. 90oC/W when mounted 0.0028 cpper.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDM3000 Rev.
Typical Electrical Characteristics
=10V
DRAIN-SOURCE CURRENT
DRAIN-SOURCE CURRENT
-10V
-8.0
-7.0 -6.0 -5.5 -5.0
-4.5 -4.0
-3.5 -3.0
DRAIN-SOURCE VOLTAGE
DRAIN-SOURCE VOLTAGE
Figure N-Channel On-Region Characteristic.
Figure P-Channel On-Region Characteristics.
DRAIN-SOURCE ON-RESISTANCE
3.5V
DRAIN-SOURCE ON-RESISTANCE DS(on) NORMALIZED
-3.5V
-4.0 -4.5 -5.0
DS(on) NORMALIZED
-5.5 -6.0
-7.0 -8.0
DRAIN CURRENT
DRAIN CURRENT
Figure N-Channel On-Resistance Variation with Gate Voltage Drain Current.
Figure P-Channel On-Resistance Variation with Gate Voltage Drain Current.
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
DS(ON), NORMALIZED
DS(ON) NORMALIZED
-10V
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Figure N-Channel On-Resistance Variation with Temperature.
Figure P-Channel On-Resistance Variation with Temperature.
NDM3000 Rev.
Typical Electrical Characteristics
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
DS(on) NORMALIZED
-10V
DS(on) NORMALIZED
125°C
125°C
25°C
25°C
-55°C
-55°C
DRAIN CURRENT DRAIN CURRENT
Figure N-Channel On-Resistance Variation with Drain Current Temperature.
Figure P-Channel On-Resistance Variation with Drain Current Temperature.
DRAIN CURRENT
-55°C
125°C
DRAIN CURRENT
-10V
-55°C
25°C
125°C
25°C
GATE SOURCE VOLTAGE GATE SOURCE VOLTAGE
Figure N-Channel Transfer Characteristics.
Figure P-Channel Transfer Characteristics.
GATE-SOURCE THRESHOLD VOLTAGE GATE-SOURCE THRESHOLD VOLTAGE
250µA
NORMALIZED
-250µA
NORMALIZED
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Figure N-Channel Gate Threshold Variation with Temperature.
Figure P-Channel Gate Threshold Variation with Temperature.
NDM3000 Rev.
Typical Electrical Characteristics
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.12
DRAIN-SOURCE BREAKDOWN VOLTAGE
250µA
-250µA
1.08 1.06 1.04 1.02 0.98 0.96 0.94
NORMALIZED
1.08
DSS, NORMALIZED
1.04
0.96
0.92
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Figure N-Channel Breakdown Voltage Variation with Temperature.
Figure P-Channel Breakdown Voltage Variation with Temperature.
1000
1000
CAPACITANCE (pF)
CAPACITANCE (pF)
DRAIN SOURCE VOLTAGE
-VDS DRAIN SOURCE VOLTAGE
Figure N-Channel Capacitance Characteristics.
Figure P-Channel Capacitance Characteristics.
GATE-SOURCE VOLTAGE
-VGS GATE-SOURCE VOLTAGE
-10V -20V
-15V
GATE CHARGE (nC)
GATE CHARGE (nC)
Figure N-Channel Gate Charge Characteristics.
Figure P-Channel Gate Charge Characteristics.
NDM3000 Rev.
Typical Electrical Characteristics
TRANSCONDUCTANCE (SIEMENS)
=10V
TRANSCONDUCTANCE (SIEMENS)
-55°C 25°C
-10V
-55°C 25°C
125°C
125°C
DRAIN CURRENT
DRAIN CURRENT
Figure N-Channel Transconductance Variation with Drain Current Temperature.
Figure P-Channel Transconductance Variation with Drain Current Temperature.
d(on)
d(off)
PULSE WIDTH
Figure P-Channel Switching Test Circuit.
Figure P-Channel Switching Waveforms.
NDM3000 Rev.
Typical Thermal Electrical Characteristics
POWER DISSIPATION
DRAIN CURRENT
4.5"x5" FR-4 Still
4.5"x5" FR-4 Still -10V
COPPER MOUNTING AREA
COPPER MOUNTING AREA
Figure SOIC-16 Leadframe Device Power Dissipation versus Copper Mounting Area
Figure P-Ch Drain Current Capability versus Copper Mounting Area.
DRAIN CURRENT DRAIN CURRENT
±10V SINGLE PULSE Note 25°C
4.5"x5" FR-4 Still
0.03
COPPER MOUNTING AREA
0.01
DRAIN-SOURCE VOLTAGE
Figure N-Ch Drain Current Capability versus Copper Mounting Area.
Figure P-Ch Typical Safe Operating Area
TRANSIENT THERMAL RESISTANCE 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01
0.05 0.02 0.01 Single Pulse P(pk)
r(t), NORMALIZED EFFECTIVE
r(t) Note
Duty Cycle,
TIME (sec)
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDM3000 Rev.
SOIC-16 Tape Reel Data Package Dimensions
SOIC(16lds) Packaging Configuration: Figure
Packaging Description:
ROST DEVICES
ROST ADIO
NUMB PEEL STREN _gms
Antistatic Cover Tape
Label
SOIC-16 parts shipped tape. carrier tape made from dissipative (carbon filled) polycarbonate resin. cover tape multilayer film (Heat Activated Adhesive nature) primarily composed polyester film, adhesive layer, sealant, anti-static sprayed agent. These reeled parts standard option shipped with 2,500 units 330cm diameter reel. reels dark blue color made polystyrene plastic (antistatic coated). This some other options further described Packaging Information table. These full reels individually barcode labeled placed inside standard intermediate (illustrated figure 1.0) made recyclable corrugated brown paper. contains reels maximum. these boxes placed inside barcode labeled shipping which comes different sizes depending number parts shipped.
Static Dissipative Embossed Carrier Tape
F63TNR Label Customized Label
SOIC (16lds) Packaging Information Packaging Option Packaging type Reel/Tube/Bag Reel Size Dimension (mm) Weight unit (gm) Weight Reel (kg) Note/Comments Standard flow code) 2,500 343x64x343 5,000 0.1437 0.7735 L86Z Rail/Tube 530x130x83 13,500 0.1437
FD85AB NDM3001 FD85AB NDM3001 FD85AB NDM3001 FD85AB
NDM3001
SOIC-16 Unit Orientation
FD85AB NDM3001
343mm 342mm 64mm Standard Intermediate Label F63TNR Label sample
LOT: CBVK741B019 FSID: NDM3000 QTY: 2500 SPEC:
F63TNR Label F63TNR Label
Label
D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: (F63TNR)3
SOIC(16lds) Tape Leader Trailer Configuration: Figure
Carrier Tape Cover Tape
Components Trailer Tape 640mm minimum empty pockets Leader Tape 1680mm minimum empty pockets
October 1999, Rev.
SOIC-16 Tape Reel Data Package Dimensions, continued
SOIC(16lds) Embossed Carrier Tape Configuration: Figure
User Direction Feed
Dimensions millimeter type SOIC(16lds) (16mm)
6.60 +/-0.30
10.35 +/-0.25
16.0 +/-0.3
1.55 +/-0.05
1.60 +/-0.10
1.75 +/-0.10
14.25
7.50 +/-0.05
+/-0.1
+/-0.1
2.40 +/-0.40
0.450 +/-0.150
13.0 +/-0.3
0.06 +/-0.02
Notes: dimensions determined with respect EIA/Jedec RS-481 rotational lateral movement requirements (see sketches
maximum Typical component cavity center line
0.9mm maximum
maximum component rotation
0.9mm maximum
Sketch (Side Front Sectional View)
Component Rotation
Sketch (Top View)
Typical component center line
Sketch (Top View)
Component lateral movement
SOIC(16lds) Reel Configuration: Figure
Component Rotation
Measured
DETAIL
detail
Diameter Option
Measured
Dimensions inches millimeters
Tape Size
16mm
Reel Option
13.00
0.059
+0.020/-0.008 +0.5/-0.2
0.795 20.2
4.00
0.646 +0.078/-0.000 16.4 +2/0
0.882 22.4
(LSL-USL)
0.626 0.764 15.9 19.4
July 1999, Rev.
SOIC-16 Tape Reel Data Package Dimensions, continued
SOIC-16 Code
Scale letter size paper
Dimensions shown below inches [millimeters]
Part Weight unit (gram): 0.1437
October 1999, Rev.
TRADEMARKS
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
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