FQS4410 Single N-Channel, Logic Level, Power MOSFET General

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FQS4410 Single N-Channel, Logic Level, Power MOSFET General

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FQS4410
FQS4410
Single N-Channel, Logic Level, Power MOSFET
General Description
These N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulse avalanche commutation mode. These devices well suited voltage applications such DC/DC converters, high efficiency switching power management portable battery operated products.
Features
10A, 30V, RDS(on) 0.0135 @VGS gate charge typical Crss typical Fast switching Improved dv/dt capability 175°C maximum junction temperature rating
Absolute Maximum Ratings
Symbol VDSS VGSS dv/dt TSTG
25°C unless otherwise noted
Parameter Drain-Source Voltage Continuous 25°C) Drain Current Continuous 70°C) Drain Current Pulsed
(Note
FQS4410 0.02 +175
Units V/ns W/°C
Gate-Source Voltage Peak Diode Recovery dv/dt Power Dissipation 25°C) Linear Derating Factor Operating Storage Temperature Range
(Note
Thermal Characteristics
Symbol Parameter Thermal Resistance, Junction-to-Ambient -Max Units °C/W
©2000 Fairchild Semiconductor International
Rev.
FQS4410
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Unit
Characteristics
BVDSS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Referenced 25°C 125°C -0.03 -100 V/°C
Characteristics
VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS,
(Note
0.0135 0.02
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -980 1280
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note
-(Note
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge A/µs
(Note
Notes: Repetitive Rating Pulse width limited maximum junction temperature 3mH, 10A, 15V, Starting 25°C 10A, di/dt 300A/us, BVDSS, Starting 25°C Pulse Test Pulse width 300µs, Duty cycle Essentially independent operating temperature
©2000 Fairchild Semiconductor International
Rev.
FQS4410
Typical Characteristics
Drain Current
Drain Current
10.0 Bottom
Note Pulse Test
Note Pulse Test
Drain-Source Voltage
VGS, Gate-Source Voltage
Figure Output Characteristics
Figure Transfer Characteristics
Drain-Source On-Resistance
Reverse Drain Current
4.5V
DS(ON)
Note
Note Pulse Test
Drain Current
VSD, Source-Drain voltage
Figure On-Resistance Variation Drain Current
Figure Source-Drain Diode Forward Voltage
3000
Ciss (Cds shorted) Coss Crss
2500
Gate-Source Voltage
Coss
2000
Capacitance [pF]
Ciss
1500
Note
1000
Crss
Note
VDS, Drain-Source Voltage
Total Gate Charge [nC]
Figure Capacitance Drain-Source Voltage
Figure Gate Charge Gate-Source Voltage
©2000 Fairchild Semiconductor International
Rev.
FQS4410
Typical Characteristics
(Continued)
(Normalized) Drain-Source Breakdown Voltage
Drain-Source On-Resistance
DS(ON) (Normalized)
Note
Note
-100
-100
Junction Temperature
Junction Temperature
Figure Breakdown Voltage Temperature
Figure On-Resistance Temperature
Operation This Area Limited DS(on)
Drain Current
Drain Current
Notes
Single Pulse
VDS, Drain-Source Voltage
Case Temperature
Figure Maximum Safe Operating Area
Figure Maximum Drain Current Case Temperature
(t),
Note
Figure Thermal Response
©2000 Fairchild Semiconductor International
Rev.
FQS4410
Gate Charge Test Circuit Waveform
200nF 300nF
Same Type
Charge
Resistive Switching Test Circuit Waveforms
rated
td(on)
td(off)
Unclamped Inductive Switching Test Circuit Waveforms
BVDSS
BVDSS IAS2 BVDSS
Time
©2000 Fairchild Semiconductor International
Rev.
FQS4410
Peak Diode Recovery dv/dt Test Circuit Waveforms
Driver
Same Type
dv/dt controlled controlled pulse period
Driver
Gate Pulse Width -Gate Pulse Period
Body Diode Forward Current
di/dt
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Forward Voltage Drop
©2000 Fairchild Semiconductor International
Rev.
FQS4410
Package Dimensions
8-SOP
1.55 ±0.20 0.061 ±0.008 0.1~0.25 0.004~0.001
4.92 ±0.20 0.194 ±0.008 5.13 0.202
6.00 ±0.30 0.236 ±0.012
+0.10 0.15 -0.05 +0.004 0.006 -0.002
0.56 0.022 1.80 0.071 MAX0.10 MAX0.004 3.95 ±0.20 0.156 ±0.008 5.72 0.225 0.50 ±0.20 0.020 ±0.008
©2000 Fairchild Semiconductor International
1.27 0.050
0.41 ±0.10 0.016 ±0.004
Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST®
DISCLAIMER
QFETQSQT OptoelectronicsQuiet SeriesSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogicUHC
VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR INTERNATIONAL. used herein: Life support devices systems devices systems which, intended surgical implant into body, support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms
Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
©2000 Fairchild Semiconductor International
Rev.

FQS4410 Single N-Channel, Logic Level, Power MOSFET General

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