Description Semicoa Semiconductors offers: Screening processing MIL-PR

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Description Semicoa Semiconductors offers: Screening processing MIL-PR

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2N2857UB
Description Semicoa Semiconductors offers: Screening processing MIL-PRF-19500 Appendix level (2N2857UBJ) JANTX level (2N2857UBJX) JANTXV level (2N2857UBJV) JANS level (2N2857UBJS) applicable level 100% visual inspection MIL-STD-750 method 2072 JANTXV JANS Radiation testing (total dose) upon request
Applications
Ultra-High frequency transistor power silicon transistor
Features
Hermetically sealed Cersot ceramic Also available chip configuration Chip geometry 0011 Reference document: MIL-PRF-19500/343
Benefits
Please contact Semicoa special configurations www.SEMICOA.com (714) 979-1900 Qualification Levels: JAN, JANTX, JANTXV JANS Radiation testing available
25°C unless otherwise specified
Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, 25OC Derate linearly above 25OC Power Dissipation, 25OC Derate linearly above 25OC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO TSTG
Rating 1.14 1.71 +200 +200
Unit Volts Volts Volts mW/°C mW/°C
Copyright 2002 Rev.
Semicoa Semiconductors, Inc.
McCormick Avenue, Costa Mesa, California 92626 714.979.1900, 714.557.4541 Page
www.SEMICOA.com
2N2857UB
ELECTRICAL CHARACTERISTICS
characteristics specified 25°C
Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO3 ICBO2 ICES IEBO1 Test Conditions Volts Volts Volts, 150°C Volts Volts Units Volts
Characteristics Parameter Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Collector Base Feedback Capacitance Collector Base time constant Small Signal Power Gain Noise Figure Symbol |hFE| rb'CC Test Conditions Volts, Volts, Volts, Volts, 31.9 Volts, Volts, MHz, Symbol hFE1 hFE2 VBEsat VCEsat Test Conditions Volts Volts -55°C
Pulse Test: Pulse Width Duty Cycle 2.0%
Units
Volts Volts
Units
12.5
Copyright 2002 Rev.
Semicoa Semiconductors, Inc.
McCormick Avenue, Costa Mesa, California 92626 714.979.1900, 714.557.4541 Page
www.SEMICOA.com

Description Semicoa Semiconductors offers: Screening processing MIL-PR

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