Description Semicoa Semiconductors offers: Screening processing MIL-PR
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2N2369AUB
Description Semicoa Semiconductors offers: Screening processing MIL-PRF-19500 Appendix level (2N2369AUBJ) JANTX level (2N2369AUBJX) JANTXV level (2N2369AUBJV) JANS level (2N2369AUBJS) applicable level 100% visual inspection MIL-STD-750 method 2072 JANTXV JANS Radiation testing (total dose) upon request
Applications
High-speed switching transistor power silicon transistor
Features
Hermetically sealed Cersot ceramic Also available chip configuration Chip geometry 0005 Reference document: MIL-PRF-19500/317
Benefits
Please contact Semicoa special configurations www.SEMICOA.com (714) 979-1900 Qualification Levels: JAN, JANTX, JANTXV JANS Radiation testing available
Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation, 25°C Derate linearly above 70°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO
25°C unless otherwise specified
Rating 3.08 +200 +200
Unit Volts Volts Volts mW/°C °C/W
TSTG
Copyright 2002 Rev.
Semicoa Semiconductors, Inc.
McCormick Avenue, Costa Mesa, California 92626 714.979.1900, 714.557.4541 Page
www.SEMICOA.com
2N2369AUB
ELECTRICAL CHARACTERISTICS
characteristics specified 25°C
Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VBEsat1 VBEsat2 VBEsat3 VBEsat4 VBEsat5 VCEsat1 VCEsat2 VCEsat3 VCEsat4 Symbol |hFE| COBO CIBO Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICEX ICES IEBO1 IEBO2 Test Conditions Volts Volts Volts, 150°C VCE= 10Volts, VEB= 0.25Volts 125°C Volts Volts Volts Test Conditions 0.35 Volts Volts Volts Volts Volts -55°C 10mA, 1mA,TA=+125°C 10mA, 1mA, -55°C 10mA, 1mA,TA=+125°C Test Conditions Volts, Volts, Volts, IB1=IB2 IB1= IB1= 0.25 0.70 0.80 0.59 0.85 0.90 1.20 1.02 0.20 0.25 0.45 0.30 Units Volts
Pulse Test: Pulse Width Duty Cycle 2.0%
Units
Current Gain
Base-Emitter Saturation Voltage
Volts
Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Switching Characteristics Storage Time Saturated Turn-On Time Saturated Turn-Off Time
Volts
Units
tOFF
Copyright 2002 Rev.
Semicoa Semiconductors, Inc.
McCormick Avenue, Costa Mesa, California 92626 714.979.1900, 714.557.4541 Page
www.SEMICOA.com
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