TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37)
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GF2303A
TO-236AB (SOT-23)
.118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37)
NCHT TRENFE View
.055 (1.40) .047 (1.20)
-30V RDS(ON) 0.12 -2.5A
0.031 (0.8)
0.035 (0.9) 0.079 (2.0)
Configuration
Gate Source Drain
max. .004 (0.1)
Dimensions inches (millimeters)
0.037 (0.95)
.007 (.180) .003 (.085)
0.037 (0.95)
.041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89)
.020 (0.51) .020 (0.51) .015 (0.37) .015 (0.37)
.098 (2.5) .091 (2.3)
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code:
.047 (1.20) .035 (0.90)
Mounting Layout
Features
Advanced Trench Process Technology High density cell design ultra-low on-resistance Popular SOT-23 package with copper lead frame superior thermal electrical capabilities Compact profile
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current 150°C Pulsed Drain Current Maximum Power Dissipation 25°C 70°C
25°C unless otherwise noted)
Symbol 25°C 70°C Tstg
Limit
Unit °C/W
-2.5 -2.0 1.25 +150
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
Note: Pulse width limited maximum junction temperature. Surface mounted board, sec.
8/2/01
GF2303A
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage
Note: Pulse test; pulse width duty cycle
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
-250µA VGS, -250µA -30V, -30V, 55°C -5V, -10V -10V, -2.5A -4.5V, -2.0A -10V, -2.5A
-1.0
-1.0
td(on) td(off) Ciss Coss Crss
-15V, -10V -2.5A
-15V, -1A, VGEN -10V
-15V, 1.0MHZ
-1.25A,
-1.0
-1.25 -1.2
Switching Test Circuit
Switching Waveforms
td(on)
toff td(off)
VOUT Output, VOUT
VGEN
Input,
INVERTED PULSE WIDTH
GF2303A
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
Fig. Transfer Characteristics
-10V -55°C 25°C
Drain-to-Source Current
-5.0V -4.0V
Drain Current
-10.0V, -8.0V, -7.0V, -6.0V
-4.5V
125°C
-3.5V
-3.0V
-2.5V
-VDS Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
-250µA
Fig. On-Resistance Drain Current
-VGS(th) Gate-to-Source Threshold Voltage (Normalized)
RDS(ON) On-Resistance
-4.5V
-10.0V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
-10.0V -2.5A
Fig. On-Resistance Gate-to-Source Voltage
2.5A
RDS(ON) On-Resistance (Normalized)
RDS(ON) On-Resistance
125°C
25°C
Junction Temperature (°C)
Gate-to-Source Voltage
GF2303A
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Gate Charge
-10V -2.5A
Fig. Capacitance
1MHz
Gate-to-Source Voltage
Capacitance (pF)
Ciss
Coss Crss
Total Gate Charge (nC)
-VDS Drain-to-Source Voltage
Fig. Source-Drain Diode Forward Voltage
Fig. Thermal Transient Impedance Junction-to-Ambient
(norm) Normalized Thermal Impedance
0.05 0.02 0.01 0.01 Single Pulse Duty Cycle, t1/t2 RJA(norm) *RJA 100°C/W
Source Current
125°C
25°C
-55°C
0.001 0.0001 0.001
0.01
-VSD Source-to-Drain Voltage
Pulse Duration (sec.)
Fig. Power Pulse Duration
Single Pulse 100°C/W 25°C
Fig. Maximum Safe Operating Area
Drain Current
Power
RDS(ON) Limit
-10V Single Pulse 100°C/W 25°C
0.001
0.01 0.01
Pulse Duration (sec.)
Drain-Source Voltage
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