Battery Switch, Protected N-Channel Enhancement-Mode MOSFET RDS(O

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Battery Switch, Protected N-Channel Enhancement-Mode MOSFET RDS(O

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GF6968ED
Battery Switch, Protected N-Channel Enhancement-Mode MOSFET
RDS(ON) 6.8A Chip Geometry
1370 1070
Gate
NCHT Prod
Source
Physical Characteristics
size 2000 1200µm (78.8 47.2 mils) Metalization: Metal Thickness: Top: Al/Si/Cu Top: 3.0µm Back: Ti/Ni/Ag Back: 1.4µm thickness: mils Bonding Area: Source: shown Gate: 175µm Recommended Wire Bonding: Source: wire more wires preferred) Gate: wire
Note: More source wires further improve performance
Features
Advanced Trench process technology High density cell design ultra-low on-resistance protected Logic level Ideal battery pack applications
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation(1) 25°C 70°C Symbol Tstg
25°C unless otherwise noted)
Limit 0.96
Unit
°C/W
Operating Junction Storage Temperature Range Junction-to-Ambient Thermal Resistance
Note: Maximum ratings based packaged TSSOP-8 Dual Common Drain package. Actual rating increase decrease), depending actual assembly method used
8/9/01
GF6968ED
Battery Switch, Protected N-Channel Enhancement-Mode MOSFET
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage On-State Drain Current
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS RDS(on) VGS(th) IDSS IGSS ID(on)
250µA 3.5V, 3.0A VGS, 20V, ±12V, 4.5V 10V, 6.8A
0.85
Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance(2) Output Capacitance
td(on) td(off) Ciss Coss Crss 10V, 4.5V 6.8A 10V, VGEN 4.5V 1.0MHZ
1360
Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage
1.5A,
Note: Pulse test; pulse width duty cycle MOSFET portion only
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GF6968ED
Ratings Characteristic Curves
2.5V 2.0V 1.5V 1.0V
Battery Switch, Protected N-Channel Enhancement-Mode MOSFET
25°C unless otherwise noted)
Fig. Output Characteristics
VGS= 4.5V 3.5V 3.0V
Fig. Transfer Characteristics
Drain Source Current
Drain Current
125°C
-55°C
25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
0.035 250µA 0.03 0.025
Fig. On-Resistance Drain Current
VGS(th) Gate-to-Source Threshold Voltage
RDS(ON) On-Resistance
2.5V 0.02 0.015 0.01 0.005 4.5V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
4.5V 6.5A 0.07 0.06
Fig. On-Resistance Gate-to-Source Voltage
6.5A
RDS(ON) On-Resistance (Normalized)
RDS(ON) On-Resistance
0.05 0.04 0.03 0.02 0.01 25°C 125°C
Junction Temperature (°C)
Gate-to-Source Voltage
GF6968ED
Ratings Characteristic Curves
Battery Switch, Protected N-Channel Enhancement-Mode MOSFET
25°C unless otherwise noted)
Fig. Gate Charge
6.5A
Fig. Source-Drain Diode Forward Voltage
Gate-to-Source Voltage
Source Current
125°C
-55°C
25°C
0.01
Gate Charge (nC)
Source-to-Drain Voltage
Fig. Power Pulse Duration
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
4.5V Single Pulse 1-in2 25°C
0.01
0.01
Drain-Source Voltage

Battery Switch, Protected N-Channel Enhancement-Mode MOSFET RDS(O

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