Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMM
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Si7842DP
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
rDS(on)
0.022 0.030
LITTLE FOOT Plust Schottky Thermal Resistance PowerPAKt Package with 1.07-mm Profile
SCHOTTKY PRODUCT SUMMARY
APPLICATIONS
Logic DC-DC
Diode Forward Voltage
0.50
PowerPAKt SO-8
6.15
5.15
Schottky Diode
N-Channel MOSFET
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa 25_C 70_C 25_C 70_C
Symbol
secs
Steady State
Unit
Tstg
Operating Junction Storage Temperature Range
THERMAL RESISTANCE RATINGS
MOSFET Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes Surface Mounted Board. Document Number: 71617 S-03834-Rev. 28-May-01 www.vishay.com Steady-State Steady-State RthJA RthJC
Schottky
Symbol
Unit
_C/W
Si7842DP
MOSFET SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED).
Parameter Static
Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VGS, Zero Gate Voltage Drain Current IDSS 85_C On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) rDS(on) Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.018 0.024 0.47 0.022 0.030 "100 2000
Symbol
Test Condition
Typa
Unit
Dynamica
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/ms Ch-1 Ch-2 VGEN
Notes Guaranteed design, subject production testing. Pulse test; pulse width duty cycle
SCHOTTKY SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
Test Condition
125_C 100_C 125_C
0.47 0.36 0.004
0.50 0.42 0.100
Unit
Maximum Reverse Leakage Current
Junction Capacitance
www.vishay.com
Document Number: 71617 S-03834-Rev. 28-May-01
Si7842DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
MOSFET
Transfer Characteristics
125_C 25_C -55_C
Drain-to-Source Voltage
Gate-to-Source Voltage
On-Resistance Drain Current
0.040 DS(on) On-Resistance 1000
Capacitance
Capacitance (pF)
0.032
Ciss
0.024
0.016
Coss Crss
0.008
0.000
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage
On-Resistance Junction Temperature
DS(on) On-Resistance (Normalized)
Total Gate Charge (nC) Document Number: 71617 S-03834-Rev. 28-May-01
Junction Temperature (_C) www.vishay.com
Si7842DP
MOSFET
On-Resistance Gate-to-Source Voltage
0.04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
150_C Source Current
DS(on) On-Resistance
0.03
0.02
25_C
0.01
0.00 Source-to-Drain Voltage Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
GS(th) Variance -0.0 Power
-0.2
-0.4
-0.6
-0.8
0.001
0.01
Time (sec)
Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Duty Cycle,
Unit Base RthJA 60_C/W PDMZthJA(t) Surface Mounted
www.vishay.com
Document Number: 71617 S-03834-Rev. 28-May-01
Si7842DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Effective Transient Thermal Impedance Duty Cycle
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Case
0.05 0.02 Single Pulse 0.01
10-5
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current (mA)
SCHOTTKY
Forward Voltage Drop
150_C
Reverse Current Junction Temperature
Forward Current
25_C
0.01
0.001
0.0001 Temperature (_C)
Forward Voltage Drop
Capacitance
Capacitance (pF)
Coss
Drain-to-Source Voltage
Document Number: 71617 S-03834-Rev. 28-May-01
www.vishay.com
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