N-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on)
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Si7852DP
N-Channel 80-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
rDS(on)
0.0165 0.022
12.5 10.9
TrenchFETr Power MOSFETS Thermal Resistance PowerPAKt Package with 1.07-mm Profile Optimized Fast Switching
APPLICATIONS
Primary Side Switch DC/DC Applications
PowerPAKt SO-8
6.15
5.15
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
secs
12.5
Steady State
Unit
Tstg
10.0
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes Surface Mounted Board. Document Number: 71627 S-03829-Rev. 28-May-01 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
Maximum
Unit
_C/W
Si7852DP
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VGS, 55_C rDS(on) Forward Transconductancea Diode Forward Voltagea 0.0135 0.0175 0.75 0.0165 0.022 "100
Symbol
Test Condition
Unit
Drain-Source On-State Resistancea
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/ms VGEN 11.0 0.85
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
Transfer Characteristics
125_C 25_C -55_C
Drain-to-Source Voltage
Gate-to-Source Voltage Document Number: 71627 S-03829-Rev. 28-May-01
www.vishay.com
Si7852DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Drain Current
0.04 DS(on) On-Resistance 3000
Capacitance
2500 0.03 Capacitance (pF)
2000
Ciss
0.02
1500
1000 Crss Coss
0.01
0.00
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage
On-Resistance Junction Temperature
DS(on) On-Resistance (Normalized)
Total Gate Charge (nC)
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.08
On-Resistance Gate-to-Source Voltage
Source Current
150_C
DS(on) On-Resistance
0.06
25_C
0.04
0.02
0.01
0.00 Source-to-Drain Voltage Gate-to-Source Voltage
Document Number: 71627 S-03829-Rev. 28-May-01
www.vishay.com
Si7852DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Avalanche Current Time
GS(th) Variance 25_C
-0.5 -1.0
125_C
-1.5
10-5
10-4
10-3
10-2 Time (sec)
10-1
Temperature (_C)
Single Pulse Power, Juncion-To-Ambient
Power
0.001 0.01 Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
0.02
Duty Cycle,
Unit Base RthJA 52_C/W PDMZthJA(t) Surface Mounted
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 71627 S-03829-Rev. 28-May-01
Si7852DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Document Number: 71627 S-03829-Rev. 28-May-01
www.vishay.com
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