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NCHT TRENFE RDS(ON) TO-252 (DPAK) 0.265 (6.73) 0.255 (6


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GFD30N03
NCHT TRENFE
RDS(ON)
TO-252 (DPAK)
0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23)
0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89)
0.190 (4.826)
0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49)
0.165 (4.191)
0.060 (1.52) 0.045 (1.14)
0.100 (2.54)
0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96)
0.118 (3.0)
0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min. 0.009 (0.23) 0.001 (0.03)
Dimensions inches (millimeters)
0.243 (6.172)
0.063 (1.6)
Mounting Layout
Mechanical Data
Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Weight: 0.011oz., 0.4g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation 25°C 100°C Symbol Tstg
25°C unless otherwise noted)
Limit
Unit
44.5 17.8
°C/W
Operating Junction Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance
Note: Maximum current limited package 1-in2 2oz. mounted
5/1/01
GFD30N03
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
250µA VGS, 250µA ±20V, 30V, 10V, 4.5V, 15V,
12.5 17.5
±100
Drain-Source On-State Resistance(2) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Current Diode Forward Voltage
td(on) td(off) Ciss Coss Crss
VDS=15V, VGS=5.0V, =20A 15V,
1850
15V, VGEN 1.0MHZ
20A,
0.91
Note: Pulse test; pulse width 300µs, duty cycle
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GFD30N03
Ratings Characteristic Curves
5.0V 4.5V
25°C unless otherwise noted)
Fig. Output Characteristics
Fig. Transfer Characteristics
Drain Source Current
6.0V
Drain Current
4.0V 3.0V 3.5V
125°C
-55°C 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
250µA 0.035 0.03
Fig. On-Resistance Drain Current
VGS(th) Threshold Voltage
RDS(ON) On-Resistance
0.025 0.02 0.015 0.01 0.005 4.5V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
Junction Temperature (°C)
GFD30N03
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.05 0.04
Fig. Gate Charge
Gate-to-Source Voltage
RDS(ON) On-Resistance
0.03 125°C
0.02
0.01
25°C
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
2500 1MHZ 2000
Fig. Source-Drain Diode Forward Voltage
1500
Source Current
Capacitance (pF)
Ciss
125°C
1000
Crss
25°C
-55°C
Coss 0.01
Drain-to-Source Voltage
Source-to-Drain Voltage
GFD30N03
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
Fig. Transient Thermal Impedance
(norm) Normalized Thermal Impedance
BVDSS Breakdown Voltage
250µA
Duty Cycle, t1/t2 RJA(t) RJA(norm) *RJA 2.0°C/W PDM* RJA(t)
Junction Temperature (°C)
Pulse Duration (sec.)
Fig. Power Pulse Duration
1000 1000
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
Single Pulse 2.0°C/W 25°C
0.0001
0.001
0.01
Drain-Source Voltage

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