NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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GF9926
NCHT TRENFE
SO-8
0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79)
VGS(th) RDS(ON) 6.0A
Dimensions inches (millimeters)
0.019 (0.48) 0.010 (0.25)
0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.165 (4.19) 0.155 (3.94)
0.050 (1.27)
0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)
0.009 (0.23) 0.007 (0.18)
0.035 (0.889) 0.025 (0.635)
0.050(1.27) 0.016 (0.41)
0.050 typ. (1.27)
Mounting Layout
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 0.5g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Fast Switching Logic Level Ideal battery pack applications
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation(1) 25°C 70°C
25°C unless otherwise noted)
Symbol 25°C 70°C Tstg
Limit
Unit
62.5
°C/W 4/11/01
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
GF9926
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(2) Drain-Source On-State Resistance(2) Forward Transconductance(2) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage(2) Source-Drain Reverse Recovery Time
Notes: Surface mounted board, sec. Pulse test; pulse width duty cycle
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
250µA VGS, 250µA 20V, VDS=20V, VGS=0V, TJ=55°C 4.5V 4.5V, 2.5V, 5.2A 10V,
td(on) td(off) Ciss Coss Crss 10V, 4.5V 10V, VGEN 4.5V 1.0MHZ
1240
1.7A, 1.7A, di/dt 100A/µs
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GF9926
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
4.5V 3.5V 2.5V 3.0V 2.0V
Fig. Transfer Characteristics
Drain Source Current
Drain Current
1.5V
125°C 25°C
-55°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
VGS(th) Gate-to-Source Threshold Voltage
250µA 0.04 0.035 0.03 0.025
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
2.5V
4.5V 0.02
0.015 0.01
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
4.5V
Junction Temperature (°C)
GF9926
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.08
Fig. Gate Charge
Gate-to-Source Voltage
RDS(ON) On-Resistance
0.06
0.04
125°C
0.02
25°C
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
1800 1MHZ 1500 1200
Fig. Source-Drain Diode Forward Voltage
Source Current
Capacitance (pF)
Ciss
125°C
25°C -55°C
Coss Crss
0.01
Drain-to-Source Voltage
Source-to-Drain Voltage
GF9926
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
250µA
Fig. Thermal Impedance
(norm) Normalized Thermal Impedance
0.05 0.02 0.01 0.01 Duty Cycle, t1/t2 RJA(norm) *RJA 82°C/W 1-in2 FR-4)
BVDSS Drain-to-Source Breakdown Voltage
Single Pulse 0.001 0.0001 0.001 0.01
Junction Temperature (°C)
Pulse Duration (sec.)
Fig. Power Pulse Duration
Single Pulse 82°C/W 25°C
Fig. Maximum Safe Operating Area
100µs
Drain Current
Power
RDS(ON) Limit
4.5V Single Pulse 1-in2 25°C
0.01
0.01
Pulse Duration (sec.)
Drain-Source Voltage

NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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