NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15
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GF4953
NCHT TRENFE
SO-8
0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79)
-30V RDS(ON) -4.9A
Prod
Dimensions inches (millimeters)
0.019 (0.48) 0.010 (0.25)
0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min.
0.009 (0.23) 0.007 (0.18)
0.165 (4.19) 0.155 (3.94)
0.050 (1.27)
0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)
0.035 (0.889) 0.025 (0.635)
0.050(1.27) 0.016 (0.41)
0.050 typ. (1.27)
Mounting Layout
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable MIL-STD750,Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 0.5g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C) Pulsed Drain Current Maximum Power Dissipation(1) 25°C 70°C
25°C unless otherwise noted)
Symbol 25°C 70°C Tstg
Limit
Unit
62.5
°C/W 7/10/01
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
Note: Surface Mounted Board, sec.
GF4953
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage
Note: Pulse test; pulse width duty cycle
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
-250µA VGS, -250µA -30V, -30V, 55°C -5V, -10V -10V, -4.9A -4.5V, -3.6A -15V, -4.9A
-1.0
-3.0
-1.0
td(on) td(off) Ciss Coss Crss
VDS= -15V, -4.9A, VGS= -15V, -10V -4.9A
-15V, -1A, VGEN -10V -15V, 1.0MHZ
-1.7A,
-1.7 -1.2
toff
Switching Test Circuit
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT VGEN
Input,
PULSE WIDTH
GF4953
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
6.0V 5.0V 7.0V 4.0V 3.5V 4.5V
Fig. Transfer Characteristics
25°C
Drain-to-Source Current
Drain Current
-55°C
125°C
3.0V 2.5V
-VDS Drain-to-Source Voltage
-VGS Gate-to-Source Voltage
-VGS(th) Gate-to-Source Threshold Voltage
Fig. Threshold Voltage Temperature
-250µA 0.16 0.14 0.12 0.08 0.06
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
-4.5V
-10V 0.04 0.02
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
-10V -4.9A
Junction Temperature (°C)
GF4953
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
-4.9A
Fig. Gate Charge
-VGS Gate-to-Source Voltage
-15V -4.9A
RDS(ON) On-Resistance
0.16
0.12
0.08
125°C
0.04
25°C
-VGS Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
1200 1000 1MHZ
Fig. Source-Drain Diode Forward Voltage
Source Current
Ciss
Capacitance (pF)
125°C 25°C
Coss
-55°C
Crss
0.01
-VDS Drain-to-Source Voltage
-VSD Source-to-Drain Voltage
GF4953
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
-250µA
Fig. Thermal Impedance
(norm) Normalized Thermal Impedance
-BVDSS Drain-to-Source Breakdown Voltage
0.05 0.02 0.01 0.01 Duty Cycle, t1/t2 RJA(norm) *RJA 82°C/W 1-in2 FR-4)
Single Pulse 0.001 0.0001 0.001 0.01
Junction Temperature (°C)
Pulse Duration (sec.)
Fig. Power Pulse Duration
Single Pulse 82°C/W 25°C
Fig. Maximum Safe Operating Area
Drain Current
Power
RDS(ON) Limit
-10V Single Pulse 1-in2 25°C
0.01
0.01
Pulse Duration (sec.)
-VDS Drain-Source Voltage
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