NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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GF4435
NCHT TRENFE
SO-8
0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79)
-30V RDS(ON) -8.0A
Dimensions inches (millimeters)
0.019 (0.48) 0.010 (0.25)
0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min.
0.009 (0.23) 0.007 (0.18)
0.165 (4.19) 0.155 (3.94)
0.050 (1.27)
0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)
0.035 (0.889) 0.025 (0.635)
0.050(1.27) 0.016 (0.41)
0.050 typ. (1.27)
Mounting Layout
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 0.5g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation 25°C 70°C
25°C unless otherwise noted)
Symbol Tstg
Limit
Unit
°C/W
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
Note: Surface Mounted Board, sec.
7/10/01
GF4435
Electrical Characteristics
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
25°C unless otherwise noted)
Symbol
Test Condition
Unit
VGS(th) IGSS IDSS ID(on) BVDSS RDS(on)
VGS, -250µA -30V, -5V, -10V -250µA -10V, -8.0A -4.5V, -5.0A
-1.0
15.3 25.3
-1.0
Drain-Source Breakdown Voltage Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage
Note: Pulse test; pulse width duty cycle
-15V, -8.0A
td(on) td(off) Ciss Coss Crss
-15V, -10V -4.6A
10.3 2520
-15V, -1A, VGEN -10V -15V 1.0MHZ
-2.1A,
-0.75
-2.1 -1.2
toff
Switching Test Circuit
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT VGEN
Input,
PULSE WIDTH
GF4435
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
-10V
Fig. Transfer Characteristics
-10V
Drain-to-Source Current
-6.0V -5.0V Drain Current
-4.5V
-4.0V
125°C 25°C -55°C
-3.5V
-VDS Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
0.06 0.055
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
-VGS(th) Gate-to-Source Threshold Voltage
0.05 0.045 0.04 -4.5V 0.035 0.03 0.025 0.02 0.015 -10V
-250µA
0.01
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
-10V -8.0A
RDS(ON) On-Resistance (Normalized)
Junction Temperature (°C)
GF4435
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.08 8.0A 0.07
Fig. Gate Charge
Gate-to-Source Voltage
-15V -4.6A
RDS(ON) On-Resistance
0.06 0.05 0.04 0.03 0.02 0.01 25°C 125°C
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
3500 3000 1MHz
Fig. Source-Drain Diode Forward Voltage
2500 2000 1500 1000 Coss Crss
Source Current
Capacitance (pF)
Ciss
125°C
25°C
-55°C
0.01
-VDS Drain-to-Source Voltage
-VSD Source-to-Drain Voltage
GF4435
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
-250
Fig. Transient Thermal Impedance
BVDSS Drain-to-Source Breakdown Voltage
Junction Temperature (°C)
Fig. Power Pulse Duration
0.01 0.01
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
Single Pulse 1-in2 25°C
Drain-Source Voltage

NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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