P-Channel Logic Level Enhancement-Mode MOSFET SOT-23-6L 0.12

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P-Channel Logic Level Enhancement-Mode MOSFET SOT-23-6L 0.12

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GF3443
P-Channel Logic Level Enhancement-Mode MOSFET
SOT-23-6L
0.122 (3.10) 0.114 (2.90)
View
0.118 (3.00) 0.106 (2.70) 0.067 (1.70) 0.059 (1.50)
0.020 (0.50) 0.010 (0.25) 0.037 (0.95) 0.075 (1.90)
RENFET oduct
0.008 (0.20) 0.004 (0.10)
-20V RDS(ON) -4.4A
Configuration (Top View)
Dimensions inches (millimeters)
Mounting Layout
0.028 (0.7) 0.039 (1.07)
0.004 (0.10) 0.0005 (0.013)
0.039 (1.00) 0.036 (0.90)
0.094 (2.4)
Typical
0.037 (0.95) Ref. 0.074 (1.9) Ref.
Mechanical Data
Case: SOT-23-6L package Terminals: Leads solderable MIL-STD-750, Method 2026 Marking Code:
Features
Advanced trench process technology High density cell design ultra on-resistance Popular SOT-23-6L package with copper lead-frame superior thermal electrical capabilities Compact profile -2.5V rated
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C Pulsed Drain Current Maximum Power Dissipation 25°C 70°C
25°C unless otherwise noted)
Symbol 25°C 70°C Tstg
Limit
Unit
62.5
°C/W
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient
Note: Surface Mounted Board, sec.
5/4/01
GF3443
P-Channel Logic Level Enhancement-Mode MOSFET
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1)
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on)
-250µA VGS, -250µA -20V 25°C 70°C
-0.6
-1.0 -5.0
-5V, -4.5V -4.5V, -4.4A
Drain-Source On-State Resistance
RDS(on)
-2.7V, -3.7A -2.5V, -3.5A
Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance
-10V, -4.4A
td(on) td(off) Ciss Coss Crss
-10V, -4.5V -4.4A
-10V, -1A, VGEN -4.5V -10V, 1.0MHZ
Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage
Note: Pulse test; pulse width duty cycle
-1.7A,
-0.75
-1.7 -1.2
toff
Switching Test Circuit
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT VGEN
Input,
PULSE WIDTH
GF3443
Ratings Characteristic Curves
P-Channel Logic Level Enhancement-Mode MOSFET
25°C unless otherwise noted)
Fig. Output Characteristics
Drain-to-Source Current
4.5V 4.0V 3.5V 2.5V
Fig. Transfer Characteristics
Drain Current
25°C
3.0V 2.0V
-55°C
125°C
1.5V
-VDS Drain-to-Source Voltage
-VGS Gate-to-Source Voltage
-VGS(th) Gate-to-Source Threshold Voltage
Fig. Threshold Voltage Temperature
-250µA
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
-2.5V -2.7V -4.5V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
-4.5V -4.4A
Junction Temperature (°C)
GF3443
Ratings Characteristic Curves
P-Channel Logic Level Enhancement-Mode MOSFET
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
-4.4A
Fig. Gate Charge
-VGS Gate-to-Source Voltage
-10V -4.4A
RDS(ON) On-Resistance
0.15
125°C 0.05 25°C
-VGS Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
1200 1MHZ
Fig. Source-Drain Diode Forward Voltage
Source Current
Capacitance (pF)
Ciss
125°C
Coss
25°C
-55°C
Crss
0.01
-VDS Drain-to-Source Voltage
-VSD Source-to-Drain Voltage
GF3443
Ratings Characteristic Curves
P-Channel Logic Level Enhancement-Mode MOSFET
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
-250µA
Fig. Thermal Impedance
(norm) Normalized Thermal Impedance
-BVDSS Drain-to-Source Breakdown Voltage
0.05 0.02 0.01 0.01 Single Pulse Duty Cycle, t1/t2 RJA(norm) *RJA 78°C/W
0.001 0.0001 0.001
0.01
Junction Temperature (°C)
Pulse Duration (sec.)
Fig. Power Pulse Duration
Single Pulse 78°C/W 25°C
Fig. Maximum Safe Operating Area
Drain Current
Power
0.001
RDS(ON) Limit
-4.5V Single Pulse 78°C/W 25°C
0.01 0.01
Pulse Duration (sec.)
-VDS Drain-Source Voltage

P-Channel Logic Level Enhancement-Mode MOSFET SOT-23-6L 0.12

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