TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37)
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GF2301
TO-236AB (SOT-23)
.118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37)
tLow NCHT TRENFE View
.055 (1.40) .047 (1.20)
GS(th)
VDS-20V RDS(ON) 0.13 -2.3A
0.031 (0.8)
0.035 (0.9) 0.079 (2.0)
Configuration
Gate Source Drain
max. .004 (0.1)
Dimensions inches (millimeters)
0.037 (0.95)
.007 (.180) .003 (.085)
0.037 (0.95)
.041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89)
.020 (0.51) .020 (0.51) .015 (0.37) .015 (0.37)
.098 (2.5) .091 (2.3)
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code:
.047 (1.20) .035 (0.90)
Mounting Layout
Features
Advanced Trench Process Technology High density cell design ultra-low on-resistance Popular SOT-23 package with copper lead frame superior thermal electrical capabilities Compact profile 2.5V rated
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current 150°C Pulsed Drain Current
25°C unless otherwise noted)
Symbol 25°C 70°C 25°C 70°C
Limit
Unit °C/W
-2.3 -1.5 1.25 +150
Maximum Power Dissipation
Tstg
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
Note: Pulse width limited maximum junction temperature. Surface mounted board, sec.
7/11/01
GF2301
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current BVDSS VGS(th) IGSS IDSS -250µA VGS, -250µA -16V, -16V, 55°C On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage
Note: Pulse test; pulse width duty cycle
25°C unless otherwise noted)
Symbol
Test Condition
Unit
-0.45
-1.0
ID(on)
-5V, -4.5V -5V, -2.5V -4.5V, -2.8A -2.5V, -2.0A -5V, -2.8A
RDS(on)
td(on) td(off) Ciss Coss Crss
-6V, -4.5V -2.8A
-6V, -1A, VGEN -4.5V
-6V, 1.0MHZ
-1.6A,
-0.8
-1.6 -1.2
Switching Test Circuit
Switching Waveforms
td(on)
toff td(off)
VOUT Output, VOUT
VGEN
Input,
INVERTED PULSE WIDTH
GF2301
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
-3.0V, -3.5V, -4.0V, -4.5V, -5.0V
Fig. Transfer Characteristics
-10V -55°C 25°C
Drain-to-Source Current
-2.0V
Drain Current
-2.5V
125°C
-1.5V
-VDS Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
-250µA
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
-VGS(th) Gate-to-Source Threshold Voltage
-2.5V
-4.5V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
-4.5V -2.8A
Fig. On-Resistance Gate-to-Source Voltage
2.8A
RDS(ON) On-Resistance (Normalized)
RDS(ON) On-Resistance
125°C 25°C
Junction Temperature (°C)
Gate-to-Source Voltage
GF2301
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Gate Charge
-2.8A
Fig. Capacitance
1MHz
Gate-to-Source Voltage
Capacitance (pF)
Ciss Coss Crss
Gate Charge (nC)
-VDS Drain-to-Source Voltage
Fig. Source-Drain Diode Forward Voltage
Fig. Thermal Impedance
(norm) Normalized Thermal Impedance
0.05 0.02 0.01 0.01 Single Pulse Duty Cycle, t1/t2 RJA(norm) *RJA 100°C/W
Source Current
150°C 25°C
-55°C
0.001 0.0001 0.001
0.01
-VSD Source-to-Drain Voltage
Pulse Duration (sec.)
Fig. Power Pulse Duration
Single Pulse 100°C/W 25°C
Fig. Maximum Safe Operating Area
Drain Current
Power
RDS(ON) Limit
-4.5V Single Pulse 100°C/W 25°C
0.001
0.01 0.01
Pulse Duration (sec.)
Drain-Source Voltage
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