NCHT Prod SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.150 (3.81
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GF4425
NCHT Prod SO-8
0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79)
-30V RDS(ON) -11A
0.05 (1.27) 0.04 (1.02)
Dimensions inches (millimeters)
0.019 (0.48) 0.010 (0.25)
0.245 (6.22) Min.
0.165 (4.19) 0.155 (3.94)
0.050 (1.27)
0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)
0.009 (0.23) 0.007 (0.18)
0.035 (0.889) 0.025 (0.635)
0.050 typ. (1.27)
Mounting Layout
0.050(1.27) 0.016 (0.41)
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 0.5g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C)(1) Pulsed Drain Current Maximum Power Dissipation 25°C 70°C
25°C unless otherwise noted)
Symbol 25°C 70°C Tstg
Limit
Unit
°C/W 6/15/01
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient
Notes: Surface Mounted Board, sec.
GF4425
Electrical Characteristics
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage Source-Drain Reverse Recovery Time
Note: Pulse test; pulse width duty cycle
25°C unless otherwise noted)
Symbol
Test Condition
Unit
VGS(th) IGSS IDSS ID(on) RDS(on)
VGS, -250µA -30V, VDS=-15V, VGS=0, TJ=70°C -5V, -10V -10V, -11A -4.5V, -8.5A -15V, -11A
-1.0
11.5 15.5
-1.0 -5.0
td(on) td(off) Ciss Coss Crss
-15V, -10V -11A
3500
-15V, -1A, VGEN -10V
-15V,
-2.1A, -2.1A, di/dt 100A/µs
-2.1 -1.2
td(on) VOUT Output, VOUT VGEN
toff td(off)
Input,
INVERTED PULSE WIDTH
Switching Test Circuit
Switching Waveforms
GF4425
Ratings Characteristic Curves
4.5V, -5.0V, -6.0V, -7.0V, -8.0V, -10.0V
25°C unless otherwise noted)
Fig. Output Characteristics
Fig. Transfer Characteristics
-10V -55°C 125°C
Drain-to-Source Current
-4.0V Drain Current -3.5V
-3.0V
25°C
-2.5V
-VDS Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
-V(th) Gate-to-Source Threshold Voltage (Normalized)
-250µA 0.03
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
0.02 4.5V
0.01
-10V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
-10V -11A
Fig. On-Resistance Gate-to-Source Voltage
-11A
RDS(ON) On-Resistance
RDS(ON) On-Resistance (Normalized)
0.08
0.06
0.04 125°C 0.02 25°C
Junction Temperature (°C)
Gate-to-Source Voltage
GF4425
Ratings Characteristic Curves
-15V -11A Ciss
25°C unless otherwise noted)
Fig. Gate Charge
4800
Fig. Capacitance
1MHz
Gate-to-Source Voltage
Capacitance (pF)
3600
2400
1200 Crss
Coss
Gate Charge (nC)
-VDS Drain-to-Source Voltage
Fig. Source-Drain Diode Forward Voltage
Fig. Transient Thermal Impedance
Source Current
125°C
0.05 0.02
25°C
Single Pulse
-55°C
0.01
-VSD Source-to-Drain Voltage
Fig. Power Pulse Duration
0.01 0.01 Single Pulse 60°C/W 25°C
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
-10V Single Pulse 1-in2 25°C
-VDS Drain-Source Voltage
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