400V 500V N-Channel IGBTs Package JEDEC TO-204AA BOTTOM VIEW

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400V 500V N-Channel IGBTs Package JEDEC TO-204AA BOTTOM VIEW

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2N6975, 2N6976, 2N6977, 2N6978
400V 500V N-Channel IGBTs
Package
JEDEC TO-204AA BOTTOM VIEW
EMITTER COLLECTOR (FLANGE)
Features
400V 500V VCE(ON) 1µs, 0.5µs On-State Voltage Fast Switching Speeds High Input Impedance
GATE
Applications
Power Supplies Motor Drives Protection Circuits
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
Description
2N6975, 2N6976, 2N6977 2N6978 n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed high-voltage, on-dissipation applications such switching regulators motor drivers. These types operated directly from low-power integrated circuits.
PACKAGING AVAILABILITY PART NUMBER 2N6975 2N6976 2N6977 2N6978 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND
NOTE: When ordering, entire part number.
Absolute Maximum Ratings
+25oC, Unless Otherwise Specified. 2N6975/2N6977 (Note +150 2N6976/2N6978 (Note +150 UNITS W/oC
Collector-Emitter Voltage VCES Collector-Gate Voltage (RGE VCGR Reverse Collector-Emitter Voltage .VCES(REV.) Gate-Emitter Voltage .VGE Collector Current Continuous Collector Current Pulsed Power Dissipation Total +25oC Power Dissipation Derating +25oC Operating Storage Junction Temperature Range TSTG NOTE: JEDEC registered value.
HARRIS SEMICONDUCTOR IGBT PRODUCT COVERED MORE FOLLOWING U.S. PATENTS:
4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951
©2001 Fairchild Semiconductor Corporation
2N6975, 2N6976, 2N6977, 2N6978 Rev.
Specifications 2N6975, 2N6976, 2N6977, 2N6978
Electrical Specifications
+25oC, Unless Otherwise Specified LIMITS 2N6975/2N6977 PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage SYMBOL BVCES VGE(TH) lCES TEST CONDITIONS VCE, 400V 500V +125oC 400V 500V Gate-Emitter Leakage Current IGES IECS VCE(ON) ±20V, 10A, Gate-Emitter Plateau Voltage VGEP QG(ON) tD(ON) tD(ON) VCE(CLP) 300V 50µH +125oC 2N6975 2N6976 2N6977 2N6978 Turn-Off Energy Loss Cycle (Off Switching Dissipation= WOFF Frequency) WOFF VCE(CLP) 300V 50µH +125oC 2N6975 2N6976 2N6977 2N6978 (Note (Note (Note (Note 2N6976/2N6978 (Note (Note (Note UNIT
Zero Gate Voltage Collector Current
(Note
1000 (Note
1000 (Note (Note (Note (Note (Note (Note
(Note (Note (Note (Note (Note
Reverse Collector-Emitter Leakage Current Collector-Emitter Voltage
(Note (Note
(Note (Note
On-State Gate Charge
Turn-On Delay Time Rise Time Turn-Off Delay Time
(Note 1000 (Note (Note 1000 (Note (Note
Fall Time
Thermal Resistance Junction-to-Case NOTE: JEDEC registered value.
1.25 (Note
oC/W
©2001 Fairchild Semiconductor Corporation
2N6975, 2N6976, 2N6977, 2N6978 Rev.
2N6975, 2N6976, 2N6977, 2N6978 Typical Performance Curves
ZJC(t) r(t)RJC CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(PEAK) P(PEAK)ZJC(t)
NORMALIZED GATE THRESHOLD VOLTAGE
EFFECTIVE TRANSIENT THERMAL IMPEDANCE (NORMALIZED)
0.05 SINGLE PULSE
+100
+150
0.01 0.01
JUNCTION TEMPERATURE (oC)
TIME (ms)
1000
FIGURE TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE FUNCTION JUNCTION TEMPERATURE TYPES
FIGURE NORMALIZED THERMAL RESPONSE CHARACTERISTICS TYPES
ICE, COLLECTOR CURRENT ICE, COLLECTOR CURRENT PULSE TEST, PULSE DURATION 80µs DUTY CYCLE 0.5%
+10V +25oC
+125oC
-40oC +25oC
VGE, GATE-TO-EMITTER VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE TYPICAL TRANSFER CHARACTERISTICS TYPES
FIGURE TYPICAL SATURATION CHARACTERISTICS TYPES
©2001 Fairchild Semiconductor Corporation
2N6975, 2N6976, 2N6977, 2N6978 Rev.
2N6975, 2N6976, 2N6977, 2N6978 Typical Performance Curves
PULSE TEST PULSE DURATION 80µs DUTY CYCLE 0.5%
(Continued)
1200 0.1MHz 1000 CAPACITANCE (pF)
ICE, COLLECTOR CURRENT
CISS
CRSS
COSS
VCE, COLLECTOR-TO-EMITTER VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE FUNCTION COLLECTOR CURRENT TYPES
WOFF VCEdt
FIGURE CAPACITANCE FUNCTION COLLECTORTO-EMITTER VOLTAGE TYPES
MAXIMUM OPERATING FREQUENCY (kHz)
fMAX1 0.05/tD(OFF) fMAX2 PC)/WOFF
2N6975 2N6976 300/ce 50µH 300V +150oC
2N6977 2N6978
ICE, COLLECTOR CURRENT
FIGURE TYPICAL INDUCTIVE SWITCHING WAVEFORMS
ALLOWABLE DISSIPATION CONDUCTION DISSIPATION FIGURE MAXIMUM OPERATING FREQUENCY COLLECTOR CURRENT (TYPICAL)
©2001 Fairchild Semiconductor Corporation
2N6975, 2N6976, 2N6977, 2N6978 Rev.
Typical Performance Curves
VCE, COLLECTOR-EMITTER VOLTAGE
(Continued)
GATE (REF) 0.43mA EMITTER VOLTAGE BVCES
0.75 BVCES 0.50 BVCES 0.25 BVCES 0.75 BVCES 0.50 BVCES 0.25 BVCES
COLLECTOR-EMITTER VOLTAGE (REF) (ACT) TIME (µs) (REF) (ACT)
FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT (REFER APPLICATION NOTES AN7254 AN7260)
50µH
1/RG 1/RGEN 1/RGE RGEN
300V
FIGURE INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
VGE, GATE-EMITTER VOLTAGE
BVCES
2N6975, 2N6976, 2N6977, 2N6978 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
PACMANPOPPowerTrench QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER SMART STARTStar* PowerStealth
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogicUHCUltraFET VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

400V 500V N-Channel IGBTs Package JEDEC TO-204AA BOTTOM VIEW

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