25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Title anwer OST) utho eyrd

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25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Title anwer OST) utho eyrd

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RFP25N05
25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Title anwer OST) utho eyrds terrpoon, anwer OST,
DRAIN (FLANGE)
Features
25A, rDS(ON) 0.047 Temperature Compensating PSPICE® Model Peak Current Pulse Width Curve Rating Curve 175oC Operating Temperature Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
RFP25N05 N-channel power MOSFET manufactured using MegaFET process. This process which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers. This transistor operated directly from integrated circuits. Formerly developmental type TA09771.
Ordering Information
PART NUMBER RFP25N05 PACKAGE TO-220AB BRAND RFP25N05
Symbol
NOTE: When ordering entire part number.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
©2001 Fairchild Semiconductor Corporation
RFP25N05 Rev.
RFP25N05
Absolute Maximum Ratings 25oC, Unless Otherwise Specified
Drain Source Voltage (Note VDSS Drain Gate Voltage VDGR Gate Source Voltage Continuous Drain Current Pulsed Drain Current (Note .IDM Pulsed Avalanche Rating Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg RFP25N05 Refer Peak Current Curve Refer Curve 0.48 UNITS W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure 250mA (Figure Rated BVDSS, Rated BVDSS,TC 150oC ±20V 25A, (Figure 25V, 12.5A, 10V, (Figure 40V, 25A, Ig(REF) 0.75mA (Figure (Figure 1075 ±100 0.047 2.083 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF QG(TOT) QG(10) QG(TH) CISS COSS CRSS
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Reverse Recovery Time NOTES: Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal Impedance curve (Figure Peak Current Capability Curve (Figure SYMBOL 25A, dISD/dt 100A/µs TEST CONDITIONS UNITS
©2001 Fairchild Semiconductor Corporation
RFP25N05 Rev.
RFP25N05 Typical Performance Curves
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC)
DRAIN CURRENT
CASE TEMPERATURE
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE 0.05 0.02 0.01 SINGLE PULSE 10-4 10-3 10-2 10-1 NOTES: DUTY FACTOR: t1/t2 PEAK
0.01 10-5
RECTANGULAR PULSE DURATION
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
DRAIN CURRENT
PEAK CURRENT CAPABILITY
25oC RATED SINGLE PULSE
25oC TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
100µs OPERATION THIS AREA LIMITED rDS(ON)
VDS, DRAIN SOURCE VOLTAGE
10ms 100ms
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION
10-5
10-4
10-3 10-2 10-1 PULSE WIDTH
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
RFP25N05 Rev.
RFP25N05 Typical Performance Curves
AVALANCHE CURRENT
(Continued)
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC 4.5V
STARTING 25oC
DRAIN CURRENT
STARTING 150oC (L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) 0.01 TIME AVALANCHE (ms)
DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE SATURATION CHARACTERISTICS
IDS(ON) DRAIN SOURCE CURRENT
NORMALIZED DRAIN SOURCE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5%
-55oC 25oC
PULSE DURATION 80µs DUTY CYCLE 0.5% 10V,
175oC
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE TRANSFER CHARACTERISTICS
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
250µA NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
RFP25N05 Rev.
RFP25N05 Typical Performance Curves
1600 DRAIN SOURCE VOLTAGE 1MHz CISS CRSS COSS CISS
(Continued)
BVDSS 37.5 BVDSS GATE SOURCE VOLTAGE
CAPACITANCE (pF)
1200
COSS CRSS
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS IG(REF) 0.75mA (REF) (ACT) TIME (µs) (REF) (ACT)
12.5
DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2001 Fairchild Semiconductor Corporation
RFP25N05 Rev.
RFP25N05 Test Circuits Waveforms
(Continued)
Qg(TOT)
Qg(10) Qg(TH) Ig(REF)
Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORM
©2001 Fairchild Semiconductor Corporation
RFP25N05 Rev.
RFP25N05 PSPICE Electrical Model
.SUBCKT RFP25N05 8/19/94
1.83e-9 1.98e-9 9.7e-10
DPLCAP LDRAIN RSCL1 RSCL2 ESCL MOS1 RSOURCE LSOURCE SOURCE RDRAIN EBREAK MOS2 DBODY DBREAK
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 65.9 EVTO
GATE
DRAIN
EVTO
LDRAIN 1e-9 LGATE 4.92e-9 LSOURCE 4.5e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 1.1e-3 RGATE 2.88 RSCL1 RSCLMOD 1e-6 RSCL2 RSOURCE RDSMOD 20.3e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD VBAT 0.764
LGATE
RGATE
RBREAK RVTO VBAT
ESCL VALUE .MODEL DBDMOD 2.32e-13 5.72e-3 TRS1 2.56e-3 TRS2 -5.13e-6 1.18e-9 5.62e-8) .MODEL DBKMOD 2.00e-1 TRS1 3.33e-4 TRS2 2.68e-6) .MODEL DPLCAPMOD (CJO 6.55e-10 1e-30 .MODEL MOSMOD NMOS (VTO 3.89 15.03 1e-30 .MODEL RBKMOD (TC1 1.04e-3 -1.04e-6) .MODEL RDSMOD (TC1 5.85e-3 1.77e-5) .MODEL RSCLMOD (TC1 2.0e-3 1.5e-6) .MODEL RVTOMOD (TC1 -5.35e-3 -3.77e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -5.04 VOFF= -3.04) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -3.04 VOFF= -5.04) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -3.02 VOFF= 1.98) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF 1.98 VOFF= -3.02) .ENDS NOTE: further discussion PSPICE model consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; written William Hepp Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
RFP25N05 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
PACMANPOPPowerTrench QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER SMART STARTStar* PowerStealth
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Title anwer OST) utho eyrd

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