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RN2101F,RN2102F,RN2103F RN2104F,RN2105F,RN2106F With built-in bia


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RN2101FRN2106F
RN2101F,RN2102F,RN2103F RN2104F,RN2105F,RN2106F
With built-in bias resistors Simplify circuit design Reduce quantity parts manufacturing process Complementary RN1101F~RN1106F Unit:
Equivalent Circuit Bias Resister Values
Type RN2101F RN2102F RN2103F RN2104F RN2105F RN2106F
JEDEC EIAJ TOSHIBA
2-2HA1A
Maximum Ratings 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2101F~2106F RN2101F~2106F RN2101F~2104F RN2105F, 2106F Symbol VCBO VCEO VEBO Tstg Rating -100 -55~150 Unit
2001-06-07
RN2101FRN2106F
Electrical Characteristics 25°C)
Characteristic Collector cut-off current RN2101F ~2106F RN2101F RN2102F Emitter cut-off current RN2103F RN2104F RN2105F RN2106F RN2101F RN2102F current gain RN2103F RN2104F RN2105F RN2106F Collector-emitter saturation voltage RN2101F ~2106F RN2101F RN2102F Input voltage (ON) RN2103F RN2104F RN2105F RN2106F RN2101F ~2104F RN2105F, 2106F Transition frequency Collector Output capacitance RN2101F ~2106F RN2101F ~2106F RN2101F RN2102F Input resistor RN2103F RN2104F RN2105F RN2106F RN2101F ~2104F Resistor ratio RN2105F RN2106F R1/R2 -5V, -0.1mA -10V, -5mA -10V, 1MHz (ON) -0.2V, -5mA (sat) -5mA, -0.25mA -5V, -10mA IEBO -10V, Symbol ICBO ICEO Test Circuit Test Condition -50V, -50V, -0.82 -0.38 -0.17 -0.082 -5V, -0.078 -0.074 -1.1 -1.2 -1.3 -1.5 -0.6 -0.7 -1.0 -0.5 3.29 15.4 32.9 1.54 3.29 0.0421 0.09 Typ. -0.1 0.0468 -100 -500 -1.52 -0.71 -0.33 -0.15 -0.145 -0.138 -0.3 -2.0 -2.4 -3.0 -5.0 -1.1 -1.3 -1.5 -0.8 6.11 28.6 61.1 2.86 6.11 0.0515 0.11 Unit
Input voltage (OFF)
(OFF)
2001-06-07
RN2101FRN2106F
2001-06-07
RN2101FRN2106F
2001-06-07
RN2101FRN2106F
2001-06-07
RN2101FRN2106F
2001-06-07
RN2101FRN2106F
Type Name Marking
RN2101F
RN2102F
RN2103F
RN2104F
RN2105F
RN2106F
2001-06-07
RN2101FRN2106F
RESTRICTIONS PRODUCT
000707EAA
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2001-06-07

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