OptiMOS=Power-Transistor Features N-Channel Product Summary

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

OptiMOS=Power-Transistor Features N-Channel Product Summary

Datasheet Thumbnail

Top Searches for this datasheet

SPP80N06S2-05 SPB80N06S2-05
OptiMOS=Power-Transistor
Features N-Channel
Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current RDS(on)
Enhancement mode
Avalanche rated dv/dt rated operating temperature
Type SPP80N06S2-05 SPB80N06S2-05
Package
Ordering Code
P-TO220-3-1 Q67040-S4245 P-TO263-3-2 Q67040-S4255
Maximum Ratings,at unless otherwise specified Parameter Continuous drain current Pulsed drain current Avalanche energy, single pulse Reverse diode dv/dt di/dt A/µs, Tjmax Gate source voltage Power dissipation Operating storage temperature climatic category; 68-1 Tstg -55.+175 55/175/56 Ptot dv/dt kV/µs puls Symbol Value Unit
1current limited bondwire; with thJC chip able carry Page
2000-04-20
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction case Thermal resistance, junction ambient, leaded version, device PCB: min. footprint cooling area RthJC RthJA RthJA Symbol min.
SPP80N06S2-05 SPB80N06S2-05
Values typ. max. Unit
Electrical Characteristics, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage Gate threshold voltage, Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance RDS(on) IGSS VGS(th) IDSS 0.01 V(BR)DSS Symbol min. Values typ. max. Unit
1Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air. Page
2000-04-20
Preliminary data Electrical Characteristics, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) td(off)
=30V, VGS=10V, =80A, =2.2 2*ID *RDS(on)max =80A =0V, =25V, f=1MHz
SPP80N06S2-05 SPB80N06S2-05
Values min. typ. 5080 1290 max. 6350 1600 Unit
Symbol
Conditions
Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge
=0V, =80A =30V, /dt=100A/µs
=44V, ID=80A
=44V, ID=80A,
V(plateau) =44V, ID=80A
TC=25°C
Page
2000-04-20
Preliminary data Power dissipation Ptot
SPP80N06S2-05
SPP80N06S2-05 SPB80N06S2-05
Drain current parameter:
SPP80N06S2-05
Ptot
160°C
Safe operating area parameter
SPP80N06S2-05
Transient thermal impedance ZthJC parameter
SPP80N06S2-05
26.0µs
thJC
0.50 0.20
0.10 0.05
single pulse
0.02 0.01
Page
2000-04-20
Preliminary data Typ. output characteristic (VDS Tj=25°C parameter:
SPP80N06S2-05
SPP80N06S2-05 SPB80N06S2-05
Typ. drain-source-on-resistance RDS(on) parameter:
SPP80N06S2-05
Ptot 300W
10.0
RDS(on)
10.0
Typ. transfer characteristics RDS(on)max parameter:
Typ. forward transconductance f(ID); Tj=25°C parameter:
Page
2000-04-20
Preliminary data Drain-source on-state resistance RDS(on) parameter
SPP80N06S2-05
SPP80N06S2-05 SPB80N06S2-05
Gate threshold voltage VGS(th) (Tj) parameter:
RDS(on)
GS(th)
typ.
Typ. capacitances (VDS) parameter: =0V,
Forward characteristics reverse diode (VSD parameter:
SPP80N06S2-05
(98%) (98%)
Page
2000-04-20
Preliminary data Avalanche energy par.:
SPP80N06S2-05 SPB80N06S2-05
Typ. gate charge (QGate parameter: pulsed
SPP80N06S2-05
QGate
Drain-source breakdown voltage V(BR)DSS parameter: ID=10
SPP80N06S2-05
V(BR)DSS
Page
2000-04-20
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved.
SPP80N06S2-05 SPB80N06S2-05
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Page
2000-04-20

OptiMOS=Power-Transistor Features N-Channel Product Summary

Top Searches for this datasheet

Other recent searches