N-Channel MOSFET Schottky Diode SO-8 0.197 (5.00) 0.189 (4.8

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N-Channel MOSFET Schottky Diode SO-8 0.197 (5.00) 0.189 (4.8

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GF4810
N-Channel MOSFET Schottky Diode
SO-8
0.197 (5.00) 0.189 (4.80)
0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79)
NCHT TRENFE oduct
Dimensions inches (millimeters)
0.019 (0.48) 0.010 (0.25)
MOSFET: RDS(ON) 13.5m Schottky: 0.53V 4.0A
Mounting Layout
0.245 (6.22) Min.
0.05 (1.27) 0.04 (1.02) 0.165 (4.19) 0.155 (3.94)
0.050 (1.27)
0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)
0.009 (0.23) 0.007 (0.18)
0.050(1.27) 0.016 (0.41)
0.035 (0.889) 0.025 (0.635)
0.050 typ. (1.27)
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 Mounting Position: Weight: 0.5g
Features
Enhancement mode MOSFET Schottky Diode
compact package Advanced Trench Process Technology high Density Cell Design Ultra On-Resistance Suitable Voltage DC/DC Converters High performance Schottky diode with high
Maximum Ratings Thermal Characteristics
MOSFET
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C) Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction)(1) Maximum Power Dissipation
25°C unless otherwise noted)
Symbol 25°C 70°C Tstg 25°C 70°C
Limit
Unit
°C/W
Operating Junction Storage Temperature Range Maximum Thermal Resistance Junction-to-Ambient
Schottky
Reverse Voltage Maximum Power Dissipation Average Forward Current Pulsed Forward Current Operating Junction Storage Temperature Range Maximum Thermal Resistance Junction-to-Ambient
Notes: Surface Mounted Board, sec.
25°C 70°C Tstg
°C/W 4/27/01
GF4810
N-Channel MOSFET With Schottky Diode
Electrical Characteristics
MOSFET
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance(1) Forward Transconductance(1) Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
250µA VGS, 250µA 30V, VDS=30V, VGS=0V, TJ=55°C 10V, 4.5V, 15V, 2.3A,
11.5 15.5 0.75
13.5
td(on) td(off) Ciss Coss Crss 15V, 1.0MHz 15V, VGEN=10V, RG=6 15V,
1850
Schottky
Diode Forward Voltage 3.0A 2.3A, 125°C 30V, 125°C 0.495 0.420 0.015 0.53 0.47 0.100
Reverse Leakage Current
Notes: Pulse test; pulse width duty cycle
GF4810
N-Channel MOSFET With Schottky Diode
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
Fig. Transfer Characteristics
-55°C 125°C
Drain-to-Source Current
5.0V, 6.0V, 8.0V, 4.5V 4.0V 3.5V
3.0V
Drain Current
2.5V
25°C
Drain-to-Source Voltage VGS(th) Gate-to-Source Threshold Voltage (Normalized)
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
250µA 0.02
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
0.018 4.5V 0.016
0.014 0.012
0.01
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
Junction Temperature (°C)
GF4810
N-Channel MOSFET With Schottky Diode
Ratings Characteristic Curves
25°C unless otherwise noted)
GF4810
N-Channel MOSFET With Schottky Diode
Ratings Characteristic Curves
25°C unless otherwise noted)

N-Channel MOSFET Schottky Diode SO-8 0.197 (5.00) 0.189 (4.8

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