NCHT TRENFE RDS(ON) TO-252 (DPAK) 0.265 (6.73) 0.255 (6

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NCHT TRENFE RDS(ON) TO-252 (DPAK) 0.265 (6.73) 0.255 (6

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GFD2206
NCHT TRENFE
RDS(ON)
TO-252 (DPAK)
0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23)
0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89)
Prod
0.190 (4.826)
0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49)
0.165 (4.191)
0.060 (1.52) 0.045 (1.14)
0.100 (2.54)
0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96)
0.118 (3.0)
0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min. 0.009 (0.23) 0.001 (0.03)
Dimensions inches (millimeters)
0.243 (6.172)
0.063 (1.6)
Mounting Layout
Mechanical Data
Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Weight: 0.011oz., 0.4g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Rugged-Avalanche Energy Rated Fast Switching High Efficiency
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current =10V Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current
25°C unless otherwise noted)
Symbol 25°C 100°C 25°C Tstg
Limit
Unit
62.5
°C/W
Repetitive Avalanche Energy
Operating Junction Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance
Notes: Repetitive rating; pulse width limited max. junction temperature 30V, starting 25°C, 470µH, Mounted 1in2, 2oz.
7/17/01
GFD2206
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance(1) Gate Threshold Voltage Forward Transconductance
25°C unless otherwise noted)
Symbol
Test Condition
Unit
V(BR)DSS RDS(on) VGS(th) IDSS IGSS
250µA 10V, VGS, 250µA 25V, 48V, 20V,
Drain-Source Leakage Current Gate-Source Leakage Dynamic Total Gate Charge(1) Gate-Source Charge
td(on)
48V, 21A,VGS 48V, 21A, 1.4, VGEN 1.0MHZ
3425
Gate-Drain ("Miller") Charge(1) Turn-On Delay Time Rise Time
Turn-Off Delay Time Fall Time(1) Input Capacitance Output Capacitance
td(off) Ciss Coss Crss
Reverse Transfer Capacitance Source-Drain Diode Continuous Source Current Pulsed Source Current Diode Forward Voltage(1) Source-Drain Reverse Recovery Time
21A, 21A, di/dt 100A/µs
0.93
Source-Drain Reverse Recovery Charge
Notes: Pulse width 300µs; duty cycle
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GFD2206
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
7.0V
Fig. Transfer Characteristics
Drain Source Current
Drain Current
6.0V
125°C
5.0V 4.5V 4.0V
25°C
-55°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. On-Resistance Drain Current
0.04 5000
Fig. Capacitance
RDS(ON) On-Resistance
Capacitance (pF)
0.03 0.02
4000
Ciss
3000
2000
0.01
1000 Coss Crss
Drain Current
Drain-to-Source Voltage
Fig. Gate Charge
Fig. On-Resistance Junction Temperature
Gate-to-Source Voltage
RDS(ON) On-Resistance (Normalized)
Gate Charge (nC)
Junction Temperature (°C)
GFD2206
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Source-Drain Diode Forward Voltage
0.04
Fig. On-Resistance Gate-to-Source Voltage
Source Current
RDS(ON) On-Resistance
0.03 125°C 0.02
125°C
25°C
0.01
25°C
-55°C 0.01
Source-to-Drain Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
VGS(th) Gate-to-Source Threshold Voltage (Normalized)
1.25 -250µA 1000
Fig. Power Pulse Duration
Single Pulse 2.0°C/W 25°C
Power
0.75
0.0001
0.001
0.01
Junction Temperature (°C)
Pulse Duration (sec.)
Fig. Maximum Safe Operating Area
1000
Fig. Thermal Impedance
(norm) Normalized Thermal Impedance
Drain Current
0.05 Single Pulse
RDS(ON) Limit
Duty Cycle, t1/t2 RJC(norm) *RJC 2.0°C/W 0.01
Single Pulse 2.0°C/W 25°C
100ms
0.01 0.0001 0.001
-VDS Drain-Source Voltage
Pulse Duration (sec.)

NCHT TRENFE RDS(ON) TO-252 (DPAK) 0.265 (6.73) 0.255 (6

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