NCHT RDS(ON) TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (
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GFB50N03
NCHT
RDS(ON)
TO-263AB
0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min.
0.160 (4.06) 0.190 (4.83)
0.045 (1.14) 0.055 (1.40)
0.42 (10.66)
0.320 (8.13) 0.360 (9.14)
0.575 (14.60) 0.625 (15.88)
0.055 (1.39) 0.066 (1.68)
Dimensions inches (millimeters)
0.63 (17.02)
0.33 (8.38)
Seating Plate
-T0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940)
0.120 (3.05) 0.155 (3.94)
0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30)
0.08 (2.032) 0.24 (6.096) 0.12 (3.05)
Mounting Layout
Mechanical Data
Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 1.3g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation 25°C 100°C Symbol Tstg
25°C unless otherwise noted)
Limit
Unit
62.5
°C/W °C/W 5/1/01
Operating Junction Storage Temperature Range Lead Temperature (1/8" from case sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance
Notes: Maximum current limited package 1-in2 2oz. mounted
GFB50N03
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
250µA VGS, 250µA ±20V 30V, 10V, 4.5V, 10V, 25A,
±100
Drain-Source On-State Resistance(1) Forward Transconductance(1) Diode Forward Voltage Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Reverse Recovery Time
Note: Pulse test; pulse width duty cycle
td(on) td(off) Ciss Coss Crss
=15V, =5V, =50A 15V,
1850
15V, VGEN 1.0MHZ 25A, di/dt 100A/µs
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GFB50N03
Ratings Characteristic Curves
VGS=10V 6.0V 4.0V 5.0V 4.5V
25°C unless otherwise noted)
Fig. Output Characteristics
Fig. Transfer Characteristics
Drain Source Current
Drain Current
125°C -55°C 25°C
3.5V
3.0V 2.5V
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
250µA 0.03 0.025 0.02
Fig. On-Resistance Drain Current
VGS(th) Threshold Voltage
RDS(ON) On-Resistance
4.5V 0.015 0.01 0.005
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
Junction Temperature (°C)
GFB50N03
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.04
Fig. Gate Charge
Gate-to-Source Voltage
0.035
RDS(ON) On-Resistance
0.03 0.025 0.02 0.015 0.01 0.005 25°C 125°C
Gate-to-Source Voltage
Charge (nC)
Fig. Capacitance
2500 1MHZ 2000 Ciss 1500
Fig. Source-Drain Diode Forward Voltage
Source Current
Capacitance (pF)
125°C 25°C -55°C
1000
Coss Crss 0.01
Drain-to-Source Voltage
Source-to-Drain Voltage
GFB50N03
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
Fig. Transient Thermal Impedance
RJA(norm) Normalized Thermal Impedance
BVDSS Breakdown Voltage
250µA
Duty Cycle, t1/t2 RJA(t) RJA(norm) *RJA 2.0°C/W PDM* RJA(t) 0.01 0.0001 0.001 0.01
Junction Temperature (°C)
Pulse Duration (sec.)
Fig. Power Pulse Duration
1000 Single Pulse 2.0°C/W 25°C 1000
Fig. Maximum Safe Operating Area
Drain Current
Power
RDS(ON) Limit
100ms Single Pulse 2.0°C/W 25°C
0.0001
0.001
0.01
Pulse Duration (sec.)
Drain-Source Voltage
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