NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15
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GF9410
NCHT TRENFE
SO-8
0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79)
RDS(ON)
Dimensions inches (millimeters)
0.019 (0.48) 0.010 (0.25)
0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min.
0.009 (0.23) 0.007 (0.18)
0.165 (4.19) 0.155 (3.94)
0.050 (1.27)
0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)
0.035 (0.889) 0.025 (0.635)
0.050(1.27) 0.016 (0.41)
0.050 typ. (1.27)
Mounting Layout
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 0.5g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation(1) 25°C 70°C
25°C unless otherwise noted)
Symbol 25°C 70°C Tstg
Limit
Unit
°C/W 7/10/01
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
GF9410
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(2)
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on)
250µA VGS, 250µA 20V, 30V, 30V, 55°C 10V,
Drain-Source On-State Resistance
RDS(on)
4.5V, 3.5A
Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance
15V,
td(on) td(off) Ciss Coss Crss 15V,
1000
25V, VGEN 10V, 1.0MHZ
Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage(2)
Notes: Surface mounted board, sec. Pulse test; pulse width duty cycle
0.75
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GF9410
Ratings Characteristic Curves
VGS=10V 2.5V 4.5V 4.0V
25°C unless otherwise noted)
Fig. Output Characteristics
Fig. Transfer Characteristics
Drain Source Current
Drain Current
3.5V
125°C -55°C 25°C
3.0V
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
250µA 0.04 0.035
Fig. On-Resistance Drain Current
VGS(th) Threshold Voltage
RDS(ON) On-Resistance
4.5V 0.03 0.025
0.02 0.015 0.01
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
Junction Temperature (°C)
GF9410
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.08
Fig. Gate Charge
Gate-to-Source Voltage
RDS(ON) On-Resistance
0.06
0.04
125°C
0.02 25°C
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
1200 Ciss 1000 1MHz
Fig. Source-Drain Diode Forward Voltage
Source Current
Capacitance (pF)
Coss Crss
125°C
25°C
-55°C
0.01
Drain-to-Source Voltage
Source-to-Drain Voltage
GF9410
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
250µA
Fig. Transient Thermal Impedance
BVDSS Breakdown Voltage
Junction Temperature (°C)
Fig. Power Pulse Duration
0.01 0.01
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
Single Pulse 1-in2 25°C
Drain-Source Voltage
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