NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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GF4800
NCHT TRENFE
SO-8
0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79)
RDS(ON) 18.5m
Prod
0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min.
0.009 (0.23) 0.007 (0.18)
Dimensions inches (millimeters)
0.019 (0.48) 0.010 (0.25)
0.165 (4.19) 0.155 (3.94)
0.050 (1.27)
0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)
0.035 (0.889) 0.025 (0.635)
0.050(1.27) 0.016 (0.41)
0.050 typ. (1.27)
Mounting Layout
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 0.5g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency Reduced Gate Charge
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C Pulsed Drain Current Maximum Power Dissipation(1) 25°C 70°C
25°C unless otherwise noted)
Symbol 25°C 70°C Tstg
Limit
Unit
°C/W 7/10/01
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
Notes: Surface mounted board, sec.
GF4800
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage(1) Continuous Source Current (Diode Conduction)
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
250µA VGS, 250µA 20V, 30V, 24V, 55°C 10V, 4.5V, 15V,
15.5 23.5
18.5
td(on) td(off) Ciss Coss Crss
15V, 5V,ID 15V,
10.5 20.5 1160
15V, VGEN 10V,
15V, 1.0MHZ
2.3A,
0.75
Notes: Pulse test; pulse width duty cycle
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GF4800
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
Drain-to-Source Current
6.0V 5.0V 3.5V 3.0V 4.5V 4.0V
Fig. Transfer Characteristics
Drain Current
125°C 25°C
-55°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
VGS(th) Gate-to-Source Threshold Voltage
250µA 0.04 0.035 0.03 0.025 0.02 0.015
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
4.5V
0.01 0.005
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
Junction Temperature (°C)
GF4800
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.07
Fig. Gate Charge
Gate-to-Source Voltage
RDS(ON) On-Resistance
0.06 0.05 0.04 0.03 0.02 25°C 0.01 125°C
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
1500 1MHZ 1200
Fig. Source-Drain Diode Forward Voltage
Source Current
Capacitance (pF)
Ciss
125°C 25°C
Coss Crss
-55°C
0.01
Drain-to-Source Voltage
Source-to-Drain Voltage
GF4800
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
250µA
Fig. Transient Thermal Impedance
BVDSS Drain-to-Source Breakdown Voltage
Junction Temperature (°C)
Fig. Power Pulse Duration
0.01 0.01
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
Single Pulse 1-in2 25°C
Drain-Source Voltage

NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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