NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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GF4450
NCHT TRENFE
SO-8
0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79)
RDS(ON) 7.5A
Prod
0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min.
0.009 (0.23) 0.007 (0.18)
Dimensions inches (millimeters)
0.019 (0.48) 0.010 (0.25)
0.165 (4.19) 0.155 (3.94)
0.050 (1.27)
0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)
0.035 (0.889) 0.025 (0.635)
0.050(1.27) 0.016 (0.41)
0.050 typ. (1.27)
Mounting Layout
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 0.5g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation(1) 25°C 70°C
25°C unless otherwise noted)
Symbol Tstg
Limit
Unit
°C/W
Operating Junction Storage Temperature Range Junction-to-Ambient Thermal Resistance
Note: Surface Mounted Board,
7/10/01
GF4450
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
250µA VGS, 250µA 60V, 10V, 7.5A 6.0V, 6.5A
Drain-Source On-State Resistance(2) Forward Transconductance(2) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage Max. Diode Forward Current
15V, 7.5A
td(on) td(off) Ciss Coss Crss 30V, 7.5A 30V, VGEN 1.0MHZ
3147
2.1A,
0.71
Notes: Surface Mounted Board, Pulse test; pulse width 300µs, duty cycle
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GF4450
Ratings Characteristic Curves
6.0V
25°C unless otherwise noted)
Fig. Output Characteristics
5.0V =10V
Fig. Transfer Characteristics
Drain-to-Source Current
4.5V
Drain Current
125°C 25°C -55°C
4.0V
3.5V
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
0.04 0.035
Fig. On-Resistance Drain Current
VGS(th) Gate-to-Source Threshold Voltage
250µA
RDS(ON) On-Resistance
0.03 0.025 4.5V 0.02 0.015 0.01 0.005
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
7.5A
RDS(ON) On-Resistance (Normalized)
Junction Temperature (°C)
GF4450
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.04 7.5A
Fig. Gate Charge
Gate-to-Source Voltage
7.5A
RDS(ON) On-Resistance
0.03
125°C 0.02
0.01
25°C
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
4000 3500 1MHz Ciss
Fig. Source-Drain Diode Forward Voltage
2500 2000 1500 1000 Crss Coss
Source Current
Capacitance (pF)
3000
125°C
25°C
-55°C
0.01
Drain-to-Source Voltage
Source-to-Drain Voltage
GF4450
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
250µA
Fig. Transient Thermal Impedance
BVDSS Drain-to-Source Breakdown Voltage
Junction Temperature (°C)
Fig. Power Pulse Duration
0.01 0.01
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
Single Pulse 1-in2 25°C
Drain-Source Voltage

NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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