NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15
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GF4410
NCHT TRENFE
SO-8
0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79)
RDS(ON) 13.5m
Dimensions inches (millimeters)
0.019 (0.48) 0.010 (0.25)
0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min.
0.009 (0.23) 0.007 (0.18)
0.165 (4.19) 0.155 (3.94)
0.050 (1.27)
0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)
0.035 (0.889) 0.025 (0.635)
0.050(1.27) 0.016 (0.41)
0.050 typ. (1.27)
Mounting Layout
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 0.5g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation 25°C 70°C
25°C unless otherwise noted)
Symbol 25°C 70°C Tstg
Limit
Unit
°C/W 7/10/01
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
Notes: Surface Mounted Board, sec.
GF4410
Electrical Characteristics
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage(1) Source-Drain Reverse Recovery Time
Note: Pulse test; pulse width duty cycle
25°C unless otherwise noted)
Symbol
Test Condition
Unit
VGS(th) IGSS IDSS ID(on) RDS(on)
VGS, 250µA 30V, VDS=30V, VGS=0V, TJ=55°C 10V, 4.5V, 15V,
13.5
td(on) td(off) Ciss Coss Crss
15V, 10A, 15V, 25V, VGEN 1.0MHZ
2100
2.3A, 2.3A, di/dt 100A/µs
0.75
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GF4410
Ratings Characteristic Curves
VGS=10V
25°C unless otherwise noted)
Fig. Output Characteristics
4.5V 4.0V 3.5V
Fig. Transfer Characteristics
Drain Source Current
Drain Current
125°C -55°C
3.0V
2.5V
25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
250µA 0.02
Fig. On-Resistance Drain Current
VGS(th) Threshold Voltage
RDS(ON) On-Resistance
0.016
0.012
4.5V
0.008 0.004
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
Junction Temperature (°C)
GF4410
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.035
Fig. Gate Charge
Gate-to-Source Voltage
0.03
RDS(ON) On-Resistance
0.025 0.02 0.015 0.01 25°C 0.005 125°C
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
3000 1MHz
Fig. Source-Drain Diode Forward Voltage
2500
2000 1500
Source Current
Capacitance (pF)
Ciss
125°C 25°C
1000 Crss Coss
-55°C
0.01
Drain-to-Source Voltage
Source-to-Drain Voltage
GF4410
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
250µA
Fig. Transient Thermal Impedance
BVDSS Breakdown Voltafge
Junction Temperature (°C)
Fig. Power Pulse Duration
0.01 0.01
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
Single Pulse 1-in2 25°C
Drain-Source Voltage
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