NCHT RDS(ON) 6.5m TO-263AB 0.380 (9.65) 0.420 (10.67) 0

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NCHT RDS(ON) 6.5m TO-263AB 0.380 (9.65) 0.420 (10.67) 0

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GFB75N03
NCHT
RDS(ON) 6.5m
TO-263AB
0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min.
0.160 (4.06) 0.190 (4.83)
0.045 (1.14) 0.055 (1.40)
0.42 (10.66)
0.320 (8.13) 0.360 (9.14)
0.575 (14.60) 0.625 (15.88)
0.055 (1.39) 0.066 (1.68)
Dimensions inches (millimeters)
0.63 (17.02)
0.33 (8.38)
Seating Plate
-T0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940)
0.120 (3.05) 0.155 (3.94)
0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30)
0.08 (2.032) 0.24 (6.096) 0.12 (3.05)
Mounting Layout
Mechanical Data
Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 1.3g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation 25°C 100°C Symbol Tstg
25°C unless otherwise noted)
Limit 69.4 27.8
Unit
°C/W °C/W 5/1/01
Operating Junction Storage Temperature Range Lead Temperature (1/8" from case sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance
Notes: Maximum current limited package 1-in2 2oz. mounted
GFB75N03
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance(1) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage On-State Drain Current
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS RDS(on) VGS(th) IDSS IGSS ID(on)
250µA 10V, 4.5V, VGS, 250µA 30V, ±20V, 15V,
±100
Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance
td(on) td(off) Ciss Coss Crss
VDS=15V, ID=38A, VGS=5V 15V,
32.5 3240
15V, VGEN 15V, 1.0MHZ
Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage
Note: Pulse test; pulse width duty cycle
38A,
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GFB75N03
Ratings Characteristic Curves
6.0V
25°C unless otherwise noted)
Fig. Output Characteristics
4.5V 4.0V
Fig. Transfer Characteristics
Drain Source Current
5.0V 3.5V
Drain Source Current
25°C 125°C -55°C
3.0V 2.5V
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
V(th) Gate-to-Source Threshold Voltage
250µA 0.016 0.014
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
0.012 0.01 4.5V 0.008 0.006 0.004 0.002
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
Junction Temperature (°C)
GFB75N03
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.03
Fig. Gate Charge
Gate-to-Source Voltage
RDS(ON) On-Resistance
0.025 0.02
0.015 125°C
0.01 0.005
25°C
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
4000 3500 1MHZ Ciss
Fig. Source-Drain Diode Forward Voltage
2500 2000 1500 1000 Coss Crss
Source Current
Capacitance (pF)
3000
125°C
25°C
-55°C
0.01
Drain-to-Source Voltage
Source-to-Drain Voltage
GFB75N03
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
Fig. Transient Thermal Impedance
(norm) Normalized Thermal Impedance
BVDSS Breakdown Voltage
250µA
0.05 Single Pulse Duty Cycle, t1/t2 RJC(norm) *RJC 1.8°C/W 0.01 0.0001 0.001 0.01
Junction Temperature (°C)
Pulse Duration (sec.)
Fig. Power Pulse Duration
1000 Single Pulse 1.8°C/W 25°C 1000
Fig. Maximum Safe Operating Area
Drain Current
Power
RDS(ON) Limit
Single Pulse 1.8°C/W 25°C 100ms
0.0001
0.001
0.01
Pulse Duration (sec.)
Drain-Source Voltage

NCHT RDS(ON) 6.5m TO-263AB 0.380 (9.65) 0.420 (10.67) 0

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