Common-Drain Dual N-Channel MOSFET RENFET TSSOP-8 0.122 (3.1

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Common-Drain Dual N-Channel MOSFET RENFET TSSOP-8 0.122 (3.1

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GF6968A
Common-Drain Dual N-Channel MOSFET
RENFET TSSOP-8
0.122 (3.10) 0.114 (2.90) 0.177 (4.50) 0.170 (4.30)
VGS(th) RDS(ON) 6.2A
Prod
0.028 (0.70) 0.020 (0.50)
0.005 (0.127)
0.260 (6.60) 0.244 (6.20)
0.260 (6.60) min.
0.028 (0.70) 0.020 (0.50)
0.204 (5.20)
0.025 (0.65)
0.012 (0.30) 0.010 (0.25) 0.047 (1.20) 0.041 (1.05)
0.012 (0.30) 0.010 (0.25)
0.025 (0.65)
0.006 (0.15) 0.002 (0.05)
Dimensions inches (millimeters)
Mounting Layout
Mechanical Data
Case: TSSOP-8 Package Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 0.5g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Li-ion battery packs Designed battery-switch applications
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C)(1) Pulsed Drain Current Maximum Power Dissipation(1) 25°C 70°C
25°C unless otherwise noted)
Symbol Tstg
Limit 0.96
Unit °C/W 4/11/01
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
Notes: Surface mounted board, sec.
GF6968A
Common-Drain Dual N-Channel MOSFET
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
250µA VGS, 250µA 12V, 20V, 4.5V 4.5V, 6.2A 2.5V, 5.3A 10V, 6.2A
17.5 26.5
±100
Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage
Note: Pulse test; pulse width duty cycle
td(on) td(off) Ciss Coss Crss 10V, 10V, 4.5V 6.2A 10V, VGEN 4.5V
1240
6.2A,
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GF6968A
Common-Drain Dual N-Channel MOSFET
Ratings Characteristic Curves
3.5V 3.0V 2.5V 1.5V 2.0V
25°C unless otherwise noted)
Fig. Output Characteristics
4.5V
Fig. Transfer Characteristics
Drain Source Current
Drain Current
125°C
-55°C
25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
250µA 0.04 0.035
Fig. On-Resistance Drain Current
VGS(th) Threshold Voltage
RDS(ON) On-Resistance
0.03 2.5V 0.025
0.02 0.015 4.5V 0.01
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
4.5V 6.2A
RDS(ON) On-Resistance (Normalized)
Junction Temperature (°C)
GF6968A
Common-Drain Dual N-Channel MOSFET
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.08 6.2A
Fig. Gate Charge
Gate-to-Source Voltage
6.2A
RDS(ON) On-Resistance
0.06
0.04 125°C
0.02 25°C
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
1800 1MHZ Ciss 1200
Fig. Source-Drain Diode Forward Voltage
1500
Source Current
Capacitance (pF)
-55°C 125°C
Crss
25°C
Coss 0.01
Drain-to-Source Voltage
Source-to-Drain Voltage
GF6968A
Common-Drain Dual N-Channel MOSFET
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
250µA
Fig. Transient Thermal Impedance
BVDSS Breakdown Voltage
Junction Temperature (°C)
Fig. Power Pulse Duration
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
Single Pulse 1-in2 25°C
0.01
0.01
Drain-Source Voltage

Common-Drain Dual N-Channel MOSFET RENFET TSSOP-8 0.122 (3.1

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