NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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GF2524
NCHT TRENFE
SO-8
0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79)
Asymmetric N-Channel Enhancement-Mode MOSFET
MOSFET RDS(ON) 5.8A MOSFET RDS(ON) 7.8A
Prod
Dimensions inches (millimeters)
0.019 (0.48) 0.010 (0.25)
0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.165 (4.19) 0.155 (3.94)
0.050 (1.27)
0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)
0.009 (0.23) 0.007 (0.18)
0.035 (0.889) 0.025 (0.635)
0.050(1.27) 0.016 (0.41)
0.050 typ. (1.27)
Mounting Layout
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 0.5g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Voltage DC/DC Converters Fast Switching High Efficiency High efficiency, optimized PWM.
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation(1)
25°C unless otherwise noted)
Symbol Tstg
MOSFET-1
MOSFET-2
Unit
62.5
25°C 70°C
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
62.5
°C/W 4/11/01
GF2524
Asymmetric N-Channel Enhancement-Mode MOSFET
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(2) Drain-Source On-State Resistance(2) Forward Transconductance(2) Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance td(on) td(off) Ciss Coss Crss
25°C unless otherwise noted)
Symbol BVDSS VGS(th) IGSS IDSS ID(on)
Test Condition 250µA VGS, 250µA 30V, 10V, 5.8A 10V, 7.8A 4.5V, 4.7A 4.5V, 6.3A 15V, 5.8A 15V, 7.8A 1.7A, 15V, VGEN 10V, 15V,
23.5 15.5 32.5 20.5 0.75 1885
Unit
toff
RDS(on)
15V, 5.8A 15V,
Notes: Surface mounted board, sec. Pulse test; pulse width duty cycle
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GF2524 MOSFET
Ratings Characteristic Curves
Asymmetric N-Channel Enhancement-Mode MOSFET
25°C unless otherwise noted)
Fig. Output Characteristics
Drain-to-Source Current
7.0V 6.0V 5.0V 4.5V 4.0V
Fig. Transfer Characteristics
Drain Current
3.5V
3.0V 2.5V
125°C 25°C
-55°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
VGS(th) Gate-to-Source Threshold Voltage
250µA 0.045 0.05
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
0.04 0.035 0.03 0.025 0.02 0.015 0.01 4.5V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
5.8A
Junction Temperature (°C)
GF2524 MOSFET
Ratings Characteristic Curves
Asymmetric N-Channel Enhancement-Mode MOSFET
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.12
Fig. Gate Charge
Gate-to-Source Voltage
5.8A
5.8A
RDS(ON) On-Resistance
0.08
0.06 125°C
0.04 0.02
25°C
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
1200 1000 1MHZ
Fig. Source-Drain Diode Forward Voltage
Source Current
Capacitance (pF)
Ciss
125°C 25°C
Coss Crss
-55°C
0.01
Drain-to-Source Voltage
Source-to-Drain Voltage
GF2524 MOSFET
Ratings Characteristic Curves
Asymmetric N-Channel Enhancement-Mode MOSFET
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
250µA
Fig. Thermal Impedance
(norm) Normalized Thermal Impedance
0.05 0.02 0.01 0.01 Duty Cycle, t1/t2 RJA(norm) *RJA 82°C/W 1-in2 FR-4)
BVDSS Drain-to-Source Breakdown Voltage
Single Pulse 0.001 0.0001 0.001 0.01
Junction Temperature (°C)
Pulse Duration (sec.)
Fig. Power Pulse Duration
Single Pulse 82°C/W 25°C
Fig. Maximum Safe Operating Area
Drain Current
Power
RDS(ON) Limit
Single Pulse 1-in2 25°C
0.01
0.01
Pulse Duration (sec.)
Drain-Source Voltage
GF2524 MOSFET
Ratings Characteristic Curves
6.0V 5.0V 4.5V 4.0V 3.5V
Asymmetric N-Channel Enhancement-Mode MOSFET
25°C unless otherwise noted)
Fig. Output Characteristics
Fig. Transfer Characteristics
Drain-to-Source Current
Drain Current
3.0V 2.5V
125°C 25°C
-55°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
VGS(th) Gate-to-Source Threshold Voltage
250µA 0.024 0.026
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
0.022 0.02 0.018 0.016 0.014 0.012 0.01 4.5V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
7.8A
Junction Temperature (°C)
GF2524 MOSFET
Ratings Characteristic Curves
Asymmetric N-Channel Enhancement-Mode MOSFET
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
0.06 0.05
Fig. Gate Charge
Gate-to-Source Voltage
7.8A
7.8A
RDS(ON) On-Resistance
0.04
0.03 125°C 0.02 25°C 0.01
Gate-to-Source Voltage
Gate Charge (nC)
Fig. Capacitance
2500
Fig. Source-Drain Diode Forward Voltage
2000
Ciss
1MHZ
1500
Source Current
Capacitance (pF)
125°C 25°C
1000
Coss Crss
-55°C
0.01
Drain-to-Source Voltage
Source-to-Drain Voltage
GF2524 MOSFET
Ratings Characteristic Curves
Asymmetric N-Channel Enhancement-Mode MOSFET
25°C unless otherwise noted)
Fig. Breakdown Voltage Junction Temperature
250µA
Fig. Thermal Impedance
(norm) Normalized Thermal Impedance
0.05 0.02 0.01 0.01 Duty Cycle, t1/t2 RJA(norm) *RJA 82°C/W 1-in2 FR-4)
BVDSS Drain-to-Source Breakdown Voltage
Single Pulse 0.001 0.0001 0.001 0.01
Junction Temperature (°C)
Pulse Duration (sec.)
Fig. Power Pulse Duration
Single Pulse 82°C/W 25°C
Fig. Maximum Safe Operating Area
Drain Current
Power
RDS(ON) Limit
Single Pulse 1-in2 25°C
0.01
0.01
Pulse Duration (sec.)
Drain-Source Voltage

NCHT TRENFE SO-8 0.197 (5.00) 0.189 (4.80) 0.157 (3.99) 0.15

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