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RDS(ON) 0.117 2.5A TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (


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GF2304
RDS(ON) 0.117 2.5A TO-236AB (SOT-23)
.118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37)
View
.055 (1.40) .047 (1.20)
Gate Source Drain
NCHT TRENFE
0.031 (0.8)
0.035 (0.9) 0.079 (2.0)
Configuration
max. .004 (0.1)
Dimensions inches (millimeters)
0.037 (0.95)
.007 (.180) .003 (.085)
0.037 (0.95)
.041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89)
.020 (0.51) .020 (0.51) .015 (0.37) .015 (0.37)
.098 (2.5) .091 (2.3)
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code:
.047 (1.20) .035 (0.90)
Mounting Layout
Features
Advanced trench process technology High density cell design ultra-low on-resistance Popular SOT-23 package with copper lead-frame superior thermal electrical capabilities Compact profile
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current Pulsed Drain Current
25°C unless otherwise noted)
Symbol 150°C 25°C 25°C 70°C
Limit
Unit °C/W
1.25 0.80 +150
Maximum Power Dissipation
Tstg
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
Notes: Pulse width limited maximum junction temperature. Surface mounted board, 2oz.
5/3/01
GF2304
RDS(ON) 0.117 2.5A
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS
250µA VGS, 250µA 30V, VDS=30V, VGS=0V, TJ=55°C 4.5V, 4.5V, 4.5V 10V, 2.5A 4.5V, 2.0A 4.5V, 2.5A
0.096 0.135
0.117 0.190
ID(on)
RDS(on)
td(on) td(off) Ciss Coss Crss 15V, 2.5A 15V, VGEN 1.0MHZ
1.25A,
0.82
Note: Pulse test; pulse width duty cycle
Switching Test Circuit
VOUT
Switching Waveforms
td(on)
toff td(off)
INVERTED
VGEN
Output, VOUT
Input,
PULSE WIDTH
GF2304
Ratings Characteristic Curves
4.5V 4.0V 3.5V 3.0V 2.5V
25°C unless otherwise noted)
-55°C
Drain-to-Source Current
Drain Source Current
25°C 125°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Capacitance
Ciss 0.18
Fig. On-Resistance Drain Current
Capacitance (pF)
Coss Crss
RDS(ON) On-Resistance
4.5V 0.12
0.06
Drain-to-Source Voltage
Drain Current
Fig. Gate Charge
Gate-to-Source Voltage
2.5A
Gate Charge (nC)
GF2304
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Gate-to-Source Voltage
2.5A
Fig. Source-Drain Diode Forward Voltage
RDS(ON) On-Resistance
Source Current
125°C 25°C
125°C
25°C
-55°C
Gate-to-Source Voltage
Source-to-Drain Voltage
Fig. Breakdown Voltage Junction Temperature
250µA
Fig. Threshold Voltage
250µA
BVDSS Breakdown Voltage
VGS(th) Gate-to-Source Threshold Voltage
Junction Temperature (°C)
Junction Temperature (°C)
GF2304
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. On-Resistance Junction Temperature
Fig. Thermal Impedance
RDS(ON) On-Resistance (Normalized)
(norm) Normalized Thermal Impedance
2.5A
0.05 0.02 0.01 0.01 Single Pulse Duty Cycle, t1/t2 RJA(norm) *RJA 100°C/W
0.001 0.0001 0.001
0.01
Junction Temperature (°C)
Pulse Duration (sec.)
Fig. Power Pulse Duration
Single Pulse 100°C/W 25°C
Fig. Maximum Safe Operating Area
Drain Current
Power
RDS(ON) Limit
Single Pulse 100°C/W 25°C
0.001
0.01 0.01
Pulse Duration (sec.)
Drain-Source Voltage

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