RENFET Battery Switch, Protected Common-Drain Dual N-Channel MOSF

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RENFET Battery Switch, Protected Common-Drain Dual N-Channel MOSF

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GF6968E
RENFET
Battery Switch, Protected Common-Drain Dual N-Channel MOSFET
VGS(th) RDS(ON) 6.5A
TSSOP-8
0.122 (3.10) 0.114 (2.90)
0.005 (0.127)
0.028 (0.70) 0.020 (0.50)
0.177 (4.50) 0.170 (4.30)
0.260 (6.60) 0.244 (6.20)
0.260 (6.60) min.
0.028 (0.70) 0.020 (0.50)
0.204 (5.20)
0.025 (0.65)
0.012 (0.30) 0.010 (0.25) 0.047 (1.20) 0.041 (1.05)
0.012 (0.30) 0.010 (0.25)
0.025 (0.65)
0.006 (0.15) 0.002 (0.05)
Dimensions inches (millimeters)
Mounting Layout
Mechanical Data
Case: TSSOP-8 Package Terminals: Leads solderable MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds terminals Mounting Position: Weight: 0.5g
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Specially Designed Li-ion battery packs Designed battery-switch applications
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C)(1) Pulsed Drain Current Maximum Power Dissipation(1) 25°C 70°C
25°C unless otherwise noted)
Symbol Tstg
Limit 0.96
Unit °C/W 4/11/01
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
Notes: Surface mounted board, sec.
GF6968E
Battery Switch, Protected Common-Drain Dual N-Channel MOSFET
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
250µA VGS, 250µA 12V, 20V, 4.5V 4.5V, 6.5A 2.5V, 5.5A 10V, 6.5A
0.60
0.85 17.5
Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Fall Time Input Capacitance
td(on) td(off) Ciss Coss Crss 10V, 10V, 4.5V 6.5A 10V, VGEN 4.5V
15.5 0.45 0.65 1360
0.60 0.85
Output Capacitance
Reverse Transfer Capacitance Source-Drain Diode
Maximum Diode Forward Current Diode Forward Voltage
Notes: Pulse test; pulse width duty cycle MOSFET portion only
1.5A,
0.61
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
GF6968E
Ratings Characteristic Curves
2.5V 2.0V 1.5V 1.0V
Battery Switch, Protected Common-Drain Dual N-Channel MOSFET
25°C unless otherwise noted)
Fig. Output Characteristics
VGS= 4.5V 3.5V 3.0V
Fig. Transfer Characteristics
Drain Source Current
Drain Current
125°C
-55°C
25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
0.035 250µA 0.03 0.025
Fig. On-Resistance Drain Current
VGS(th) Gate-to-Source Threshold Voltage
RDS(ON) On-Resistance
2.5V 0.02 0.015 0.01 0.005 4.5V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
4.5V 6.5A 0.07 0.06
Fig. On-Resistance Gate-to-Source Voltage
6.5A
RDS(ON) On-Resistance (Normalized)
RDS(ON) On-Resistance
0.05 0.04 0.03 0.02 0.01 25°C 125°C
Junction Temperature (°C)
Gate-to-Source Voltage
GF6968E
Ratings Characteristic Curves
Battery Switch, Protected Common-Drain Dual N-Channel MOSFET
25°C unless otherwise noted)
Fig. Gate Charge
6.5A
Fig. Source-Drain Diode Forward Voltage
Gate-to-Source Voltage
Source Current
125°C
-55°C
25°C
0.01
Gate Charge (nC)
Source-to-Drain Voltage
Fig. Transient Thermal Impedance
Fig. Power Pulse Duration
Duty Cycle, t1/t2 RJA(t) RJA(norm) *RJA 93°C/W 1-in2 2oz. FR-4) PDM* RJA(t)
0.01
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
4.5V Single Pulse 1-in2 25°C
0.01
Drain-Source Voltage

RENFET Battery Switch, Protected Common-Drain Dual N-Channel MOSF

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