U.S. CDMA 3.5V POWER AMPLIFIER MODULE Description ECM004 power am

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U.S. CDMA 3.5V POWER AMPLIFIER MODULE Description ECM004 power am

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ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE Description
ECM004 power amplifier module 3.5Volts with high efficiency. This device developed using EiC's InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. optimized CDMA (digital) 1850 1910 band. operates from positive voltage 4Volts Vcc) includes power-down feature. input output both matched housed Land Grid Array package.
Features
U.S. CDMA Single 3.5V Supply 3-Cell Li-Ion Battery Power-down activated when Vref 28.5 CDMA Power CDMA Efficiency Power-down Capability 80mA Typical Quiescent Current High Reliability InGaP Design
Applications
3.5V U.S. CDMA Handsets
Functional Block Diagram
CAUTION!
SENSITIVE ELECTRONIC DEVICE
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE
ELECTRICAL SPECIFICATIONS
following tables list electrical characteristics ECM004 Power Amplifier Module. Table lists electrical performance ECM004 nominal operating conditions band. Table lists absolute maximum ratings continuous operation.
Table Electrical Specifications
Test Conditions: +3.5V, VREF (reference power-down voltage) +2.9V, 1850 1910
SYMBOL PARAMETER LIMITS TYP. UNIT TEST CONDITION
MIN.
MAX.
Frequency Gain (CDMA Modulation) 28.5dBm Output Power (CDMA) Adjacent Channel Power Rejection 28.5dBm Power Added Efficiency (CDMA) 28.5 Output Stability Quiscent Current Leakage Current ILeak Supply Voltage Input Return Loss Noise Figure Power Down On/Off Time TON/OFF NOTE Using Application Schematic. Tuned CDMA. NOTE 1250 offset from band center. NOTE oscillation phases NOTE 3.5V, VREF/PD ACPR
1850
1910 28.5 <100
VSWR
NOTE NOTE NOTE Note
Table Absolute Maximum Ratings
Exceeding absolute maximum ratings cause permanent damage device. damage assuming only paeameter limit time with other parameters below nominal value.
PARAMETER Supply Voltage Reference Power-down Voltage(Vcc=VREF Power Input Ambient Operating Temperature Storage Temperature RATING +110 +140 UNIT Volts Volts TEST CONDITION VREF 3.0V 3.5V VREF
3.0V
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE
PACKAGE DIMENSIONS MARKINGS
ECM004 multi-layer laminate base, overmold encapsulated modular package designed surface-mounted solder attachment printed circuit board.
Package Dimensions
VIEW
Device Marking
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE
Figure Pout Gain Using CDMA Signal
Gain(dB) Pout(dBm) 1850MHz@-40°C 1850MHz@25°C 1850MHz@85°C 1880MHz@-40°C 1880MHz@25°C 1880MHz@85°C 1910MHz@-40°C 1910MHz@25°C 1910MHz@85°C
Figure
Pout Using CDMA Signal PAE(%) Pout(dBm) 1850MHz@-40°C 1850MHz@25°C 1850MHz@85°C 1880MHz@-40°C 1880MHz@25°C 1880MHz@85°C 1910MHz@-40°C 1910MHz@25°C 1910MHz@85°C
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE
Figure
Pout ACPR1(dBm) 1850MHz@-40°C ACPR1(dBc) -100 -110 -120 1850MHz@25°C 1850MHz@85°C 1880MHz@-40°C 1880MHz@25°C 1880MHz@85°C 1910MHz@-40°C 1910MHz@25°C 1910MHz@85°C
Figure
Temperature Frequency Pout 28.5dBm -40°C 25°C 85°C
1850MHz 1880MHz 1910MHz
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE
Figure
GCDMA Temperature Frequency Pout 28.5dBm 1850MHz 1880MHz 1910MHz -40°C 25°C 85°C
Figure
ACPR Temperature Frequency 28.5dBm 1850MHz
-40°C 25°C 85°C
1880MHz
1910MHz
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE
Figure
GCDMA Temperature Frequency Pout=28dBm 28.5 27.5 26.5 25.5 24.5 23.5 1850MHz 1880MHz
Figure
-40°C 25°C 85°C
1910MHz
Temperature Frequency Pout=28dBm 1850MHz 1880MHz 1910MHz
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE
Figure
ACPR Temperature Frequency Pout=28dBm -20.00 -25.00 -30.00 -35.00 -40.00 -45.00 -50.00 -55.00 -60.00 -65.00 -70.00 1850MHz 1880MHz 1910MHz
ACPR
-40°C 25°C 85°C
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE
LAYOUT front side ground area under requires multiple vias provide thermal resistance backside ground. EVAL BOARD
SCHEMATIC
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE
Notes:
FUNCTION Vcc1 Vref Vcc2
DESCRIPTION connects driver stage collector. input port connects internally matched circuit. Ref. Voltage bias circuit. significant amplifier current drawn until Vref reaches approximately 2.5V. Vcc2 connects power amplifier stage collector. internally matched ohms expects load impedance. Ground Ground. This ground also serves heat sink must connect well ground heat sink. supply pins connected together supply.
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE ECM004 Operating Principles Features ECM004 6x6mm size Power Amplifier Module (PAM) band CDMA handset market. utilizes InGaP technology multi layer laminate base, over molded modular package with signal pad. offers Reliability Quality EiCs proprietary InGaP provides excellent reliability used infrastructure industry. InGaP inherently superior AlGaAs HBT. surface defect density InGaP much lower than that AlGaAs. life test InGaP gone through 315oC junction temperature 50kA/cm2 over 6000 hours months), translating multi-million hours lifetime longer operation envelope [1]. This kind robust performance superior conventional AlGaAs HBT. InGaP goes through product burn-in test well. large sample group, usually pieces, goes through burn-in test ambient temperature 1000 hours. number than calculated based upon data collected. MTTF simply 1/FIT, this MTTF should agree with life test results. agreement between MTTF from life test essential: validates both tests! there large discrepancy [2], quality claim flawed. Although handset applications have stringent operating requirements infrastructure market, high reliability InGaP offers assurance user high quality product designed high volume production. InGaP Patent-pending Circuit Design Offers Temperature Variation Current gain InGaP varies about over +85oC range, compared with AlGaAs HBT. This gain variation over temperature, coupled with patent-pending circuit design approach, provides more stable electrical performance. III. ECM004 Offers High Gain Margin Transmitter Chain Design typical gain ECM004 27dB. This high gain allows driver amplifier very linear which results reduced current. Taking into account loss front PAM, driver needs deliver only 4dBm linear power. P1dB driver amplifier should more than 10dBm. lower gain used, driver needs provide more power, expense more operation current possible degradation ACPR. Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE Therefore ECM004 replace lower gain PAM, this allows driver work lower output power provide better ACPR, this improved performance offers more design margin transmitter chain. Easy Shut Down Leakage Current connected directly battery, therefore shut down required. voltage applied Vref pin, which then brings quiescent current. Removing voltage applied Vref pin, quiescent current will drop small leakage current, typically <10uA. leakage current allows longer standby time phone. General Application requires minimal number external components. Both input output dc-blocked within shown function diagram. input connected ground through shunt inductor within PAM. ECM004is designed with quiescent current 80mA typical. full CDMA power 28dBm, operation current will greater than 500mA. Therefore "quasi class "deep class amplifier. operation current increases with output power. CDMA signal time varying amplitude. peak power above average power more accurately defined PDF, power density function). peak power clipped amplifier saturation power level, distortion signal will cause ACPR deteriorate rapidly. Therefore P1dB tested SINE wave) amplifier should over 31dBm provide good ACPR output power. 100pF capacitor required adjacent Vcc2 pin. addition, large capacitor (>uF) required. CDMA signal time-varying amplitude; therefore draws operation current corresponding instantaneous demand power. large capacitor near-by electric charge reservoir, providing current demand. long electrical path from battery behaves large inductor; instantaneous demand current will cause voltage drop, resulting poor ACPR. evaluation board, large shunt capacitor added protect Vref from power supply overvoltage during ON/OFF. This similar different from ESD. Therefore rise fall time test power down feature needs tested with shunt capacitor Vref removed. Conclusion ECM004 offers high gain, quiescent current, small footprint. InGaP technology provides excellent reliability quality, assuring phone manufacturer high quality product designed high volume production. "InGaP HBTs offer Enhanced Reliability", Barry Lin, Applied Microwave Wireless. 115-116, Dec. 2000 Interaction Degradation Mechanisms Be-Doped GaAs HBTs", Darrell Hill John Parsey, Digest GaAs Symposium, Oct., 2000. 241-244 Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision
ECM004
U.S. CDMA 3.5V POWER AMPLIFIER MODULE
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000371-000 Revision

U.S. CDMA 3.5V POWER AMPLIFIER MODULE Description ECM004 power am

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