Access Times 25ns (SRAM) 120ns (FLASH) Packaging 66-pin, Type, 1.385 i
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WSF41632-22XX 128KX32 SRAM 512Kx32 FLASH MIXED MODULE
Access Times 25ns (SRAM) 120ns (FLASH) Packaging 66-pin, Type, 1.385 inch square HIP, Hermetic Ceramic (Package 402) lead, Hermetic CQFP (G2T), 22.4mm (0.880 inch) square (Package 509) 4.57mm (0.180 inch) height. Designed JEDEC lead 0.990" CQFJ footprint (Fig. Package developed. 128Kx32 SRAM 512Kx32 Flash Organized 128Kx32 SRAM 512Kx32 Flash Memory with common Data Power CMOS Commercial, Industrial Military Temperature Ranges Compatible Inputs Outputs Built-in Decoupling Caps Multiple Ground Pins Noise Operation Weight grams typical
FLASH MEMORY 10,000 Erase/Program Cycles Sector Architecture equal size sectors 64KBytes each combination sectors concurrently erased. Also supports full chip erase Volt Programming; Supply Embedded Erase Program Algorithms Hardware Software Write Protection Page Program Operation Internal Program Control Time.
This data sheet describes product under development, fully characterized, subject change without notice. Note: Programming information available upon request.
MIXED MODULES
FIG.
I/O8 I/O9 I/O10 I/O0 I/O1 I/O2
CONFIGURATION WSF41632-22H2X VIEW
FWE2 SWE2 I/O11 I/O3 I/O15 I/O14 I/O13 I/O12 FWE1 I/O7 I/O6 I/O5 I/O4 I/O24 I/O25 I/O26 SWE1 I/O16 I/O17 I/O18 SWE4 FWE4 I/O27 FWE3 SWE3 I/O19 I/O31 I/O30 I/O29 I/O28
DESCRIPTION
D0-31 A0-18 SWE1-4 FWE1-4 Data Inputs/Outputs Address Inputs SRAM Write Enables SRAM Chip Select Output Enable Power Supply Ground Connected Flash Write Enables Flash Chip Select
FWE3 SWE3 FWE4 SWE4
BLOCK DIAGRAM
FWE1 SWE1 FWE2 SWE2
I/O23 I/O22 I/O21 I/O20
A0-18
512K Flash 128K SRAM
512K Flash 128K SRAM
512K Flash 128K SRAM
512K Flash 128K SRAM
I/O0-7
I/O8-15
I/O16-23
I/O24-31
1998
White Microelectronics Phoenix, (602) 437-1520
WSF41632-22XX
FIG.
CONFIGURATION WSF41632-22G2TX VIEW DESCRIPTION
D0-31 A0-18
I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31
SWE3 SWE4 FWE1
MIXED MODULES
I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15
Data Inputs/Outputs Address Inputs SRAM Write Enables SRAM Chip Select Output Enable Power Supply Ground Connected Flash Write Enables Flash Chip Select
SWE2 FWE2 FWE3 FWE4 SWE1
FWE1 A0-18 SWE1 FWE2 SWE2
SWE1-4
0.940"
White lead CQFP fills same function JEDEC lead CQFJ FWE1-4 PLCC. lead inspection advantage CQFP form. BLOCK DIAGRAM
FWE3
SWE3
FWE4
SWE4
512K Flash 128K SRAM
512K Flash 128K SRAM
512K Flash 128K SRAM
512K Flash 128K SRAM
I/O0-7
I/O8-15
I/O16-23
I/O24-31
White Microelectronics Phoenix, (602) 437-1520
WSF41632-22XX
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Signal Voltage Relative Junction Temperature Supply Voltage Parameter Flash Data Retention Flash Endurance (write/erase cycles) years 10,000 Test Capacitance Capacitance Capacitance D0-31 Capacitance Capacitance Symbol -0.5 -0.5 +125 +150 Unit
SRAM TRUTH TABLE
Mode Standby Read Read Write Data High Data High Data Power Standby Active Active Active
MIXED MODULES
NOTE: must remain high when low.
CAPACITANCE +25°C)
Symbol Condition 1.0MHz 1.0MHz 1.0MHz 1.0MHz 1.0MHz Unit
NOTE: Stresses above absolute maximum rating cause permanent damage device. Extended operation maximum levels degrade performance affect reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage Input Voltage Symbol -0.5 +0.8 Unit
This parameter guaranteed design tested.
CHARACTERISTICS (VCC 5.0V, -55°C +125°C)
Parameter Input Leakage Current Output Leakage Current SRAM Operating Supply Current Mode Standby Current SRAM Output Voltage SRAM Output High Voltage Flash Active Current Read Flash Active Current Program Erase Flash Output Voltage Flash Output High Voltage Flash Output High Voltage Flash Lock Voltage Symbol ICCx32 Conditions 5.5, VIH, VIH, VOUT VIL, VIH, 5MHz, VIH, VIH, 5MHz, 8mA, -4.0mA, VIL, VIL, 8.0mA, -2.5 -100 0.85 -0.4 0.45 Unit
NOTES: current listed includes both operating current frequency dependent component MHz). frequency component typically less than mA/MHz, with active while Embedded Algorithm (program erase) progress. test conditions: 0.3V, 0.3V
White Microelectronics Phoenix, (602) 437-1520
WSF41632-22XX
SRAM CHARACTERISTICS (VCC 5.0V, -55°C +125°C) SRAM CHARACTERISTICS (VCC 5.0V, -55°C +125°C)
Unit Parameter Write Cycle Write Cycle Time Chip Select Write Address Valid Write Data Valid Write Write Pulse Width Address Setup Time Address Hold Time Output Active from Write Write Enable Output High Data Hold from Write Time Symbol Unit
MIXED MODULES
Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable Output Valid Chip Select Output Output Enable Output Chip Disable Output High Output Disable Output High
Symbol
This parameter guaranteed design tested.
This parameter guaranteed design tested.
FIG.
TEST CIRCUIT
Current Source
TEST CONDITIONS
Parameter Input Pulse Levels Input Rise Fall Input Output Reference Level
D.U.T.
Unit
1.5V
Output Timing Reference Level
(Bipolar Supply)
Current Source
NOTES: programmable from +7V. programmable from 16mA. Tester Impedance typically midpoint adjusted simulate typical resistive load circuit. tester includes capacitance.
White Microelectronics Phoenix, (602) 437-1520
WSF41632-22XX
FIG. SRAM
TIMING WAVEFORM READ CYCLE
ADDRESS
MIXED MODULES
tCHZ
ADDRESS
tACS tCLZ
DATA
PREVIOUS DATA VALID DATA VALID
tOLZ
DATA
HIGH IMPEDANCE
tOHZ
DATA VALID
READ CYCLE (SCS VIH)
READ CYCLE (SWE VIH)
FIG. SRAM
WRITE CYCLE CONTROLLED
ADDRESS
tWHZ
DATA
DATA VALID
WRITE CYCLE CONTROLLED (FCS VIH)
FIG. SRAM
WRITE CYCLE CONTROLLED
ADDRESS
WS32K32-XHX
DATA
DATA VALID
WRITE CYCLE CONTROLLED (FCS VIH)
White Microelectronics Phoenix, (602) 437-1520
WSF41632-22XX
FLASH CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS, CONTROLLED (VCC 5.0V, -55°C +125°C)
MIXED MODULES
Parameter Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Write Enable Pulse Width High Duration Byte Programming Operation Chip Sector Erase Time Read Recovery Time Before Write Set-up Time Chip Programming Time Output Enable Setup Time Output Enable Hold Time Chip Erase Time Toggle Data Polling. WHWH2 AVAV ELWL WLWH AVWL DVWH WHDX WLAX WHWL WHWH1 WHWH2 GHWL
Symbol
-120
Unit
tOES tOEH
FLASH CHARACTERISTICS READ ONLY OPERATIONS (VCC 5.0V, -55°C +125°C)
Parameter Read Cycle Time Address Access Time Chip Select Access Time Output Valid Chip Select Output High High Output High Output Hold from Address, Change, whichever first Guaranteed design, tested. Symbol AVAV AVQV ELQV GLQV EHQZ GHQZ AXQX -120 Unit
White Microelectronics Phoenix, (602) 437-1520
WSF41632-22XX
FLASH CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS, CONTROLLED (VCC 5.0V, -55°C +125°C)
Parameter Write Cycle Time Setup Time Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Pulse Width High Duration Programming Operation Sector Erase Time Read Recovery Time Chip Programming Time Chip Erase Time tWHWH2 AVAV WLEL ELEH AVEL DVEH EHDX ELAX tEHEL WHWH1 WHWH2 GHEL Symbol tCPH -120 Unit
MIXED MODULES
White Microelectronics Phoenix, (602) 437-1520
WSF41632-22XX
FIG.
WAVEFORMS FLASH MEMORY READ OPERATIONS
MIXED MODULES
Addresses Stable tACC Addresses
White Microelectronics Phoenix, (602) 437-1520
NOTE:
Outputs
High
Output Valid
High
WSF41632-22XX
FIG.
WRITE/ERASE/PROGRAM OPERATION, FLASH MEMORY CONTROLLED
MIXED MODULES
Data Polling
tWHWH1
tWPH
5555H
tGHWL
DOUT
NOTES: address memory location programmed. data programmed byte address. output complement data written device. DOUT output data written device. Figure indicates last cycles four cycle sequence.
Addresses
White Microelectronics Phoenix, (602) 437-1520
Data
WSF41632-22XX
FIG.
WAVEFORMS CHIP/SECTOR ERASE OPERATIONS FLASH MEMORY
MIXED MODULES
NOTES: sector address Sector Erase.
2AAAH
5555H
2AAAH
5555H
tWPH
5555H
tGHWL
10H/30H
Addresses
Data
White Microelectronics Phoenix, (602) 437-1520
tVCS
WSF41632-22XX
FIG.
WAVEFORMS DATA POLLING DURING EMBEDDED ALGORITHM OPERATIONS FLASH MEMORY
MIXED MODULES
High
Valid Data
D0-D7 Valid Data
D0-D6 Invalid
tWHWH
White Microelectronics Phoenix, (602) 437-1520
Valid Data tWHWH
tOEH
NOTE:
D0-D6
High
WSF41632-22XX
FIG.
WRITE/ERASE/PROGRAM OPERATION FLASH MEMORY, CONTROLLED
MIXED MODULES
Data Polling tWHWH1 tGHEL tCPH Data 5555H Addresses
NOTES: represents address memory location programmed. represents data programmed byte address. output complement data written device. DOUT output data written device. Figure indicates last cycles four cycle sequence.
White Microelectronics Phoenix, (602) 437-1520
DOUT
WSF41632-22XX
PACKAGE 509:
LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)
25.15 (0.990) 0.26 (0.010) 22.36 (0.880) 0.26 (0.010) 4.57 (0.180) 0.27 (0.011) 0.04 (0.002)
MIXED MODULES
0.25 (0.010)
24.03 (0.946) 0.26 (0.010) (0.040) 0.127 (0.005)
0.25 (0.010) 0.19 (0.007) 0.06 (0.002)
23.87 (0.940)
DETAIL
1.27 (0.050) 0.38 (0.015) 0.05 (0.002) 20.3 (0.800) DETAIL
White lead CQFP fills same function JEDEC lead CQFJ PLCC. lead inspection advantage CQFP form.
0.940"
LINEAR DIMENSIONS MILLIMETERS PARENTHETICALLY INCHES
White Microelectronics Phoenix, (602) 437-1520
WSF41632-22XX
PACKAGE 402:
PIN, TYPE, CERAMIC HEX-IN-LINE PACKAGE, (H2)
35.2 (1.385) 0.38 (0.015)
IDENTIFIER SQUARE BOTTOM
MIXED MODULES
25.4 (1.0)
(0.223) 3.81 (0.150) (0.005) 2.54 (0.100) 1.27 (0.050) (0.005) 0.76 (0.030) (0.005) 15.24 (0.600) 1.27 (0.050) 0.46 (0.018) 0.05 (0.002) 25.4 (1.0)
LINEAR DIMENSIONS MILLIMETERS PARENTHETICALLY INCHES ORDERING INFORMATION 41632
LEAD FINISH: Blank Gold plated leads Solder leads DEVICE GRADE: Military Screened Industrial Commercial
-55°C +125°C -40°C +85°C +70°C
PACKAGE TYPE: Ceramic In-line Package, (Package 402) 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509) ACCESS TIME (ns) 25ns SRAM 120ns FLASH IMPROVEMENT MARK ORGANIZATION, 128K SRAM 512K Flash Flash PROM SRAM WHITE MICROELECTRONICS
White Microelectronics Phoenix, (602) 437-1520
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