Access Times 25ns (SRAM) 70ns (FLASH) Access Times 70ns (SRAM) 120ns (

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Access Times 25ns (SRAM) 70ns (FLASH) Access Times 70ns (SRAM) 120ns (

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WSF128K16V-XH1X 128KX16 SRAM/FLASH 3.3V MODULE
Access Times 25ns (SRAM) 70ns (FLASH) Access Times 70ns (SRAM) 120ns (FLASH) Packaging 66-pin, Type, 1.075 inch square HIP, Hermetic Ceramic (Package 400) 128Kx16 3.3V SRAM 128Kx16 3.3V FLASH Organized 128Kx16 SRAM 128Kx16 Flash Memory with separate Data Buses Both blocks memory User Configurable 256Kx8 Power CMOS Commercial, Industrial Military Temperature Ranges Compatible Inputs Outputs Built-in Decoupling Caps Multiple Ground Pins Noise Operation Weight grams typical
FLASH MEMORY 10,000 Erase/Program Cycles Sector Architecture equal size sectors bytes each combination sectors concurrently erased. Also supports full chip erase Volt Programming; 3.3V Supply Embedded Erase Program Algorithms Hardware Software Write Protection
This data sheet describes product that under development subject change cancellation without notice. Note: Programming information available upon request.
MIXED MODULES
FIG.1
SD10
CONFIGURATION WSF128K16V-XH1X VIEW
SWE2 SCS2 SD11 SCS1 SD15 SD14 SD13 SD12 SWE1 FD10 FCS2 FWE2 FD11 FWE1 FCS1 FD15
DESCRIPTION
FD0-15 Flash Data Inputs/Outputs
SD0-15 SRAM Data Inputs/Outputs
FD14 FD13 FD12
A0-16 SWE1-2 SCS1-2
Address Inputs SRAM Write Enable SRAM Chip Selects Output Enable +3.3V Power Supply Ground Connected Flash Write Enable Flash Chip Select
FWE1-2 FCS1-2
BLOCK DIAGRAM
A0-16 128K SRAM 128K SRAM 128K FLASH 128K FLASH
SD0-7
SD8-15
FD0-7
FD8-15
March 1998
White Microelectronics Phoenix, (602) 437-1520
WSF128K16V-XH1X
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol -0.5 -0.5 +125 +150 Unit Operating Temperature Storage Temperature Signal Voltage Relative Junction Temperature Supply Voltage Parameter Flash Data Retention Flash Endurance (write/erase cycles) NOTES: Stresses above absolute maximum rating cause permanent damage device. Extended operation maximum levels degrade performance affect reliability. years 10,000 Test Capacitance Capacitance Capacitance Data Capacitance Address Line Capacitance
SRAM TRUTH TABLE
Mode Standby Read Read Write Data High Data High Data Power Standby Active Active Active
MIXED MODULES
CAPACITANCE +25°C)
Symbol Condition 1.0MHz 1.0MHz 1.0MHz 1.0MHz 1.0MHz Unit
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage Input Voltage Symbol -0.5 +0.8 Unit
This parameter guaranteed design tested.
CHARACTERISTICS (VCC 3.3V, -55°C +125°C)
Parameter Input Leakage Current Output Leakage Current SRAM Operating Supply Current Mode Standby Current SRAM Output Voltage SRAM Output High Voltage Flash Active Current Read Flash Active Current Program Erase Flash Output Voltage Flash Output High Voltage Flash Output High Voltage Flash Lock Voltage Symbol ICCx16 Conditions 3.6, VIH, VIH, VOUT VIL, VIH, 5MHz, VIH, VIH, 5MHz, 2.1mA, -1.0mA, VIL, VIL, +4.0mA, -2.0 -100 0.85 -0.4 0.45 Unit
test conditions: 0.3V, 0.3V NOTES: current listed includes both operating current frequency dependent component MHz). frequency component typically less than mA/MHz, with VIH. active while Embedded Algorithm (program erase) progress. 100% tested.
White Microelectronics Phoenix, (602) 437-1520
WSF128K16V-XH1X
SRAM CHARACTERISTICS (VCC 3.3V, -55°C +125°C)
Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable Output Valid Chip Select Output Output Enable Output Chip Disable Output High Output Disable Output High Symbol Unit Parameter Write Cycle Write Cycle Time Chip Select Write Address Valid Write Data Valid Write Write Pulse Width Address Setup Time Address Hold Time Output Active from Write Write Enable Output High Data Hold from Write Time
SRAM CHARACTERISTICS (VCC 3.3V, -55°C +125°C)
Symbol Unit
MIXED MODULES
This parameter guaranteed design tested.
This parameter guaranteed design tested.
FIG.
TEST CIRCUIT
Current Source
TEST CONDITIONS
Parameter Input Pulse Levels Input Rise Fall Input Output Reference Level
D.U.T.
Unit
1.5V
Output Timing Reference Level
(Bipolar Supply)
Current Source
NOTES: programmable from +7V. programmable from 16mA. Tester Impedance typically midpoint adjusted simulate typical resistive load circuit. tester includes capacitance.
White Microelectronics Phoenix, (602) 437-1520
WSF128K16V-XH1X
FIG. SRAM
TIMING WAVEFORM READ CYCLE
ADDRESS
MIXED MODULES
ADDRESS
tACS tCLZ
tCHZ
DATA
PREVIOUS DATA VALID DATA VALID
tOLZ
DATA
HIGH IMPEDANCE
tOHZ
DATA VALID
READ CYCLE (SCS VIL, VIH)
READ CYCLE (SWE VIH)
FIG. SRAM
WRITE CYCLE CONTROLLED
ADDRESS
tWHZ
DATA
DATA VALID
WRITE CYCLE CONTROLLED
FIG. SRAM
WRITE CYCLE CONTROLLED
ADDRESS
WS32K32-XHX
DATA
DATA VALID
WRITE CYCLE CONTROLLED
White Microelectronics Phoenix, (602) 437-1520
WSF128K16V-XH1X
FLASH CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS, CONTROLLED (VCC 3.3V, -55°C +125°C)
Parameter Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Chip Select Hold Time Write Enable Pulse Width High Duration Byte Programming Operation (min) Sector Erase Time Read Recovery Time Before Write Set-up Time Chip Programming Time Output Enable Setup Time Output Enable Hold Time Toggle Data Polling. tOES tOEH AVAV ELWL WLWH AVWL DVWH WHDX WLAX WHEH WHWL WHWH1 WHWH2 GHWL Symbol 12.5 12.5 -120 Unit
MIXED MODULES
FLASH CHARACTERISTICS READ ONLY OPERATIONS (VCC 3.3V, -55°C +125°C)
Parameter Read Cycle Time Address Access Time Chip Select Access Time Output Valid Chip Select Output High High Output High Output Hold from Address, Change, whichever first Guaranteed design, tested. Symbol AVAV AVQV ELQV GLQV EHQZ GHQZ AXQX -120 Unit
White Microelectronics Phoenix, (602) 437-1520
WSF128K16V-XH1X
FLASH CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS, CONTROLLED (VCC 3.3V, -55°C +125°C)
MIXED MODULES
Parameter Write Cycle Time Setup Time Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Hold from High Pulse Width High Duration Programming Operation Duration Erase Operation Read Recovery before Write Chip Programming Time AVAV WLEL ELEH AVEL DVEH EHDX ELAX EHWH tEHEL WHWH1 WHWH2 GHEL
Symbol tCPH
12.5
-120
Unit 12.5
White Microelectronics Phoenix, (602) 437-1520
WSF128K16V-XH1X
FIG.
WAVEFORMS FLASH MEMORY READ OPERATIONS
MIXED MODULES
Addresses Stable
tACC
Addresses
Outputs
White Microelectronics Phoenix, (602) 437-1520
High
Output Valid
High
WSF128K16V-XH1X
FIG.
WRITE/ERASE/PROGRAM OPERATION, FLASH MEMORY CONTROLLED
MIXED MODULES
Data Polling 5555H NOTES: address memory location programmed. data programmed byte address. output complement data written device. output data written device. Figure indicates last cycles four cycle sequence. Addresses
White Microelectronics Phoenix, (602) 437-1520
tWHWH1
tWPH
tGHWL
DOUT
Data
WSF128K16V-XH1X
FIG.
WAVEFORMS CHIP/SECTOR ERASE OPERATIONS FLASH MEMORY
MIXED MODULES
10H/30H 2AAAH 5555H 2AAAH 5555H tWPH 5555H tGHWL
Addresses
Data
NOTES: sector address Sector Erase.
White Microelectronics Phoenix, (602) 437-1520
tVCS
WSF128K16V-XH1X
FIG.
MIXED MODULES
WAVEFORMS DATA POLLING DURING EMBEDDED ALGORITHM OPERATIONS FLASH MEMORY
High
Valid Data
D0-D7 Valid Data
D0-D6 Invalid
tWHWH
tWHWH
tOEH
White Microelectronics Phoenix, (602) 437-1520
D0-D6
Valid Data
High
WSF128K16V-XH1X
FIG.
WRITE/ERASE/PROGRAM OPERATION FLASH MEMORY, CONTROLLED
MIXED MODULES
Data Polling
tWHWH1
tGHEL
tCPH
5555H
Data
Addresses
DOUT
NOTES: represents address memory location programmed. represents data programmed byte address. output complement data written device. DOUT output data written device. Figure indicates last cycles four cycle sequence.
White Microelectronics Phoenix, (602) 437-1520
WSF128K16V-XH1X
PACKAGE 400:
PIN, TYPE, CERAMIC HEX-IN-LINE PACKAGE, (H1)
27.3 (1.075) 0.25 (0.010)
MIXED MODULES
IDENTIFIER SQUARE BOTTOM
25.4 (1.0)
4.34 (0.171) 3.81 (0.150) 0.13 (0.005) 2.54 (0.100) 1.42 (0.056) 0.13 (0.005) 0.76 (0.030) 0.13 (0.005) 15.24 (0.600) 1.27 (0.050) 0.46 (0.018) 0.05 (0.002) 25.4 (1.0)
LINEAR DIMENSIONS MILLIMETERS PARENTHETICALLY INCHES
White Microelectronics Phoenix, (602) 437-1520
WSF128K16V-XH1X
ORDERING INFORMATION 128K16 XH1X
LEAD FINISH:
MIXED MODULES
Blank Gold plated leads Solder leads DEVICE GRADE: Military Screened Industrial Commercial
-55°C +125°C -40°C +85°C +70°C
PACKAGE TYPE: 1.075" Ceramic In-line Package, (Package 400) ACCESS TIME (ns) 25ns SRAM 70ns FLASH 70ns SRAM 120ns FLASH 3.3V Power Supply IMPROVEMENT MARK ORGANIZATION, 128K Flash PROM SRAM WHITE MICROELECTRONICS
White Microelectronics Phoenix, (602) 437-1520

Access Times 25ns (SRAM) 70ns (FLASH) Access Times 70ns (SRAM) 120ns (

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