Access Times 120, 150ns Packaging lead, 40mm square, Hermetic CQFP (Pa
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WF512K64-XG4WX5 512Kx64 FLASH MODULE
Access Times 120, 150ns Packaging lead, 40mm square, Hermetic CQFP (Package 504) 100,000 Erase/Program Cycles Minimum (0°C 70°C) Sector Architecture equal size sectors 64KBytes each combination sectors concurrently erased. Also supports full chip erase Organized 512Kx64, user configurable 1Mx32, 2Mx16, 4Mx8. Commercial, Industrial Military Temperature Ranges Volt Programming. Supply. Power CMOS, 6.5mA Standby Embedded Erase Program Algorithms Compatible Inputs CMOS Outputs Built-in Decoupling Caps Noise Operation Page Program Operation Internal Program Control Time Weight WF512K64-XG4WX5 grams typical
This data sheet describes product under development, fully characterized, subject change without notice. Note: Programming information available upon request.
PRELIMINARY*
FIG.
CONFIGURATION WF512K64-XG4WX5 BLOCK DIAGRAM VIEW
I/O2 I/O1 I/O0 I/O63 I/O62 I/O61
A0-18 512K 512K
512K
I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 I/O24 I/O25 I/O26 I/O27 I/O28
I/O60 I/O59 I/O58 I/O57 I/O56 I/O55 I/O54 I/O53 I/O52 I/O51 I/O50 I/O49 I/O48 I/O47 I/O46 I/O45 I/O44 I/O43 I/O42 I/O41 I/O40 I/O39 I/O38 I/O37 I/O36 I/O35
I/O0-7
I/O8-15
I/O.
I/O56-63
DESCRIPTION
FLASH MODULES
I/O0-63 A0-18 WE1-8 CS1-8
Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Connected
September 1998
I/O29 I/O30 I/O31 I/O32 I/O33 I/O34
White Microelectronics Phoenix, (602) 437-1520
WF512K64-XG4WX5
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Supply Voltage Range (VCC) Signal voltage range (any except Storage Temperature Range Lead Temperature (soldering, seconds) Data Retention (Mil Temp) Endurance (write/erase cycles) (Mil Temp) Voltage sector protect (VID) +125 -2.0 +7.0 -2.0 +7.0 +150 +300 years 10,000 cycles min. -2.0 +14.0 Unit Parameter capacitance capacitance capacitance Data capacitance Address input capacitance
CAPACITANCE +25°C)
Symbol CI/O Conditions VI/O Unit
This parameter guaranteed design tested.
NOTES: Stresses above absolute maximum rating cause permanent damage device. Extended operation maximum levels degrade performance affect reliability. Minimum voltage input pins -0.5V. During voltage transitions, inputs overshoot -2.0 periods 20ns. Maximum voltage output pins 0.5V. During voltage transitions, outputs overshoot periods 20ns. Minimum input voltage -0.5V. During voltage transitions, overshoot periods 20ns. Maximum input voltage +13.5V which overshoot 14.0 periods 20ns.
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage Input Voltage Operating Temp. (Mil.) Operating Temp. (Ind.) Voltage Sector Protect Symbol -0.5 11.5 +0.8 +125 12.5 Unit
CHARACTERISTICS CMOS COMPATIBLE (VCC 5.0V, -55°C +125°C)
Parameter Input Leakage Current Output Leakage Current Active Current Read Active Current Program Erase Symbol LOx32 Conditions 5.5, 5.5, VIL, VIH, 5MHz VIL, 5.5, VIH, 5MHz 5.5, -2.5 0.85
0.45
Unit
FLASH MODULES
Standby Current Static Current Output Voltage Output High Voltage Lock-Out Voltage
NOTES: current listed includes both operating current frequency dependent component MHz). frequency component typically less than mA/MHz, with active while Embedded Algorithm (program erase) progress. test conditions: 0.3V, 0.3V
White Microelectronics Phoenix, (602) 437-1520
WF512K64-XG4WX5
CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED (VCC 5.0V, -55°C +125°C)
Parameter Write Cycle Time Write Enable Setup Time Chip Select Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Chip Select Pulse Width High Duration Byte Programming Operation Chip Sector Erase Time Read Recovery Time Chip Programming Time Chip Erase Time Symbol AVAV WLEL ELEH AVEL DVEH EHDX ELAX EHEL WHWH1 WHWH2 GHEL -120 -150 Unit
FLASH MODULES
FIG.
TEST CIRCUIT
Current Source
TEST CONDITIONS
Parameter Input Pulse Levels Input Rise Fall Input Output Reference Level
D.U.T.
Unit
1.5V
Output Timing Reference Level
(Bipolar Supply)
Current Source
NOTES: programmable from +7V. programmable from 16mA. Tester Impedance typically midpoint adjusted simulate typical resistive load circuit. tester includes capacitance.
White Microelectronics Phoenix, (602) 437-1520
WF512K64-XG4WX5
CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS, CONTROLLED (VCC 5.0V, -55°C +125°C)
Parameter Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Write Enable Pulse Width High Duration Byte Programming Operation Sector Erase Time Read Recovery Time before Write Set-up Time Chip Programming Time Output Enable Setup Time Output Enable Hold Time Chip Erase Time Toggle Data Polling. tOES tOEH Symbol AVAV ELWL WLWH AVWH DVWH WHDX WHAX WHWL WHWH1 WHWH2 GHWL tVCS -120 -150 Unit
CHARACTERISTICS READ ONLY OPERATIONS (VCC 5.0V, -55°C +125°C)
Parameter Read Cycle Time Address Access Time Chip Select Access Time Output Enable Output Valid AVAV AVQV ELQV GLQV EHQZ GHQZ AXQX Symbol -120 -150 Unit
FLASH MODULES
Chip Select Output High Output Enable High Output High Output Hold from Address, Change, whichever First Guaranteed design, tested
White Microelectronics Phoenix, (602) 437-1520
WF512K64-XG4WX5
FIG.
WAVEFORMS READ OPERATIONS
Addresses Stable
tACC
High
Output Valid
High
FLASH MODULES
Addresses
Outputs
White Microelectronics Phoenix, (602) 437-1520
WF512K64-XG4WX5
FIG.
WRITE/ERASE/PROGRAM OPERATION, CONTROLLED
Data Polling
tWHWH1
5555H
tGHWL
FLASH MODULES
White Microelectronics Phoenix, (602) 437-1520
tWPH
DOUT
Addresses
NOTES: address memory location programmed. data programmed byte address. output complement data written each chip. DOUT output data written device. Figure indicates last cycles four cycle sequence.
Data
WF512K64-XG4WX5
FIG.
WAVEFORMS CHIP/SECTOR ERASE OPERATIONS
2AAAH
5555H
2AAAH
5555H
10H/30H
FLASH MODULES
tWPH
5555H
tGHWL
Addresses
Data
NOTE: sector address Sector Erase.
White Microelectronics Phoenix, (602) 437-1520
tVCS
WF512K64-XG4WX5
FIG.
WAVEFORMS DATA POLLING DURING EMBEDDED ALGORITHM OPERATIONS
High
Valid Data
D0-D7 Valid Data tWHWH Data D0-D6 D0-D6 Invalid
FLASH MODULES
White Microelectronics Phoenix, (602) 437-1520
tOEH
WF512K64-XG4WX5
FIG.
ALTERNATE CONTROLLED PROGRAMMING OPERATION TIMINGS
Data Polling
tWHWH1
tGHEL
tCPH
5555H
DOUT
FLASH MODULES
Addresses
NOTES: represents address memory location programmed. represents data programmed byte address. output complement data written each chip. DOUT output data written device. Figure indicates last cycles four cycle sequence.
White Microelectronics Phoenix, (602) 437-1520
Data
WF512K64-XG4WX5
PACKAGE 504:
LEAD, CERAMIC QUAD FLAT PACK, CQFP (G4W)
(0.200)
39.6 (1.56) 0.38 (0.015)
1.27 (0.050) (0.005)
IDENTIFIER
12.7 (0.500) (0.020) PLACES (0.200) 0.25 (0.010) PLACES
1.27 (0.050) (1.50) PLACES
0.38 (0.015) 0.08 (0.003) PLACES
0.25 (0.010) 0.05 (0.002)
LINEAR DIMENSIONS MILLIMETERS PARENTHETICALLY INCHES
ORDERING INFORMATION 512K64
PROGRAMMING VOLTAGE DEVICE GRADE: Military Screened Industrial Commercial
FLASH MODULES
White Microelectronics Phoenix, (602) 437-1520
-55°C +125°C -40°C +85°C 70°C
PACKAGE TYPE: Lead 40mm Ceramic Quad Flat Pack, CQFP (Package 504) ACCESS TIME (ns) ORGANIZATION, 512K User configurable Flash PROM WHITE MICROELECTRONICS
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