NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor

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NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor

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NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance.These devices particularly suited voltage applications such motor control DC/DC conversion where fast switching, in-line power loss, resistance transients needed.
Features
RDS(ON) 0.06 RDS(ON) 0.075 High density cell design extremely RDS(ON). High power current handling capability widely used surface mount package. Dual MOSFET surface mount package.
Absolute Maximum Ratings
Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
25°C unless otherwise note
NDS9925A
(Note
Units
Power Dissipation Dual Operation Power Dissipation Single Operation
(Note (Note (Note
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note Thermal Resistance, Junction-to-Case
(Note
°C/W °C/W
NDS9925A Rev.B1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage, Forward Gate Body Leakage, Reverse
(Note
-100
VDS= VGS,
CHARACTERISTICS
Gate Threshold Voltage
0.45 0.045 0.069
0.06 0.11
Static Drain-Source On-Resistance
125oC
0.059 0.075
ID(on) Ciss Coss Crss tD(on) tD(off)
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
4.2A VDS=
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note RGEN
NDS9925A Rev.B1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Parameter
Conditions
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
0.74
+RCA
DS(ON)@T
Typical single device operation using board layouts shown below 4.5"x5" FR-4 still environment: 78oC/W when mounted copper. 125oC/W when mounted 0.02 copper. 135oC/W when mounted 0.003 copper.
Scale letter size paper. Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDS9925A Rev.B1
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
=4.5V
2.0V
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
RDS(ON) NORMALIZED
DS(on) NORMALIZED
4.2A 4.5V
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
4.5V
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
DRAIN CURRENT
-55°C
25°C 125°C
NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
JUNCTION TEMPERATURE (°C)
250µA
GATE SOURCE VOLTAGE
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDS9925A Rev.B1
Typical Electrical Characteristics
BVDSS NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE
1.12 REVERSE DRAIN CURRENT
1.08
250µA
125°C
1.04
25°C -55°C
0.01
0.96
0.001
0.92
JUNCTION TEMPERATURE (°C)
0.0001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
1500 1000 CAPACITANCE (pF)
GATE-SOURCE VOLTAGE
4.2A
Ciss
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
toff
td(off)
VOUT
INVERTED
I10%
PULSE WIDTH
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDS9925A Rev.B1
Typical Electrical Thermal Characteristics
STEADY-STATE POWER DISSIPATION TRANSCONDUCTANCE (SIEMENS)
-55°C 25°C
Total Power Dual Operation
125°C
Power Single Operation
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA (in2
Figure Transconductance Variation with Drain Current Temperature.
Figure SO-8 Dual Package Maximum Steady-State Power Dissipation versus Copper Mounting Area.
STEADY-STATE DRAIN CURRENT
DRAIN CURRENT
4.5"x5" FR-4 Board Still 4.5V
0.05
4.5V SINGLE PULSE Note 25°C
COPPER MOUNTING AREA (in2
0.01
DRAIN-SOURCE VOLTAGE
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
TRANSIENT THERMAL RESISTANCE 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01
0.05 0.02 0.01 Single Pulse
Figure Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
Duty Cycle, TIME (sec)
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDS9925A Rev.B1

NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor

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