2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effec

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2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effec

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2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor
2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor
These n-channel enhancement mode field effect transistors produced using National's very high cell density third generation DMOS technology These products have been designed minimize on-state resistance provide rugged reliable performance fast switching They used with minimum effort most applications requiring deliver pulsed currents This product particularly suited voltage current applications such small servo motor controls power MOSFET gate drivers other switching applications
Features
Efficient high density cell design approaching million in2) Voltage controlled small signal switch Rugged High saturation current (ON)
11378 11378-1
TO-92 7000 Series
TO-236 (SOT-23) 7002 Series
11378
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage Drain-Gate Voltage (RGS Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation Derating above TSTG Operating Storage Temperature Range Maximum Lead Temperature Soldering Purposes from Case Seconds 2N7000 2N7002 NDF7000A
NDS7002A
Units
2000
1500
C1995 National Semiconductor Corporation
11378
RRD-B30M115 Printed
2N7000 Electrical Characteristics unless otherwise noted
Symbol CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Forward b15V
Parameter
Conditions
Units
CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage ID(ON) On-State Drain Current Forward Transconductance
VDS(ON)
DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS toff Turn-On Time Turn-Off Time
BODY-DRAIN DIODE RATINGS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
THERMAL CHARACTERISTICS RiJA RiJC Thermal Resistance Junction Ambient Thermal Resistance Junction Case
Pulse Test Pulse Width Duty Cycle
2N7002 Electrical Characteristics unless otherwise noted
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Forward Gate-Body Leakage Reverse b20V
CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS(ON) Drain-Source On-Voltage ID(ON) On-State Drain Current Forward Transconductance VDS(ON) VDS(ON) 2700
DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS tOFF Turn-On Time Turn-Off Time RGEN 150X
BODY-DRAIN DIODE RATINGS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
THERMAL CHARACTERISTICS RiJA Thermal Resistance Junction Ambient
Pulse Test Pulse Width Duty Cycle
NDF7000A Electrical Characteristics unless otherwise noted
Symbol CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Forward b15V
Parameter
Conditions
Units
CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage ID(ON) On-State Drain Current Forward Transconductance VDS(ON) VDS(ON)
VDS(ON)
DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS toff Turn-On Time Turn-Off Time
BODY-DRAIN DIODE RATINGS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 2000
THERMAL CHARACTERISTICS RiJA Thermal Resistance Junction Ambient
Pulse Test Pulse Width Duty Cycle
NDS7002A Electrical Characteristics unless otherwise noted
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Forward Gate-Body Leakage Reverse b20V
CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS(ON) Drain-Source On-Voltage ID(ON) On-State Drain Current Forward Transconductance VDS(ON) VDS(ON) 2700
DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS tOFF Turn-On Time Turn-Off Time 150X
BODY-DRAIN DIODE RATINGS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 1500
THERMAL CHARACTERISTICS RiJA Thermal Resistance Junction Ambient
Pulse Test Pulse Width Duty Cycle
Typical Electrical Characteristics
2N7000 2N7002 NDF7000A NDS7002A
11378-4
11378
FIGURE On-Region Characteristics
FIGURE rDS(ON) Variation with Drain Current Gate Voltage
11378-6
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FIGURE Transfer Characteristics
FIGURE Breakdown Voltage Variation with Temperature
11378-8
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FIGURE Gate Threshold Variation with Temperature
FIGURE On-Resistance Variation with Temperature
Typical Electrical Characteristics (Continued)
2N7000 2N7002 NDF7000A NDS7002A (Continued)
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FIGURE On-Resistance Drain Current
FIGURE Body Diode Forward Voltage Variation with Current Temperature
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FIGURE Capacitance Drain-Source Voltage
FIGURE Gate Charge Gate-Source Voltage
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FIGURE 2N7000 Safe Operating Area
FIGURE 2N7002 Safe Operating Area
Typical Electrical Characteristics (Continued)
2N7000 2N7002 NDF7000A NDS7002A (Continued)
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FIGURE NDF7000A Safe Operating Area
FIGURE NDS7002A Safe Operating Area
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FIGURE TO-92 Transient Thermal Response
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FIGURE SOT-23 Transient Thermal Response
Physical Dimensions inches (millimeters)
11378
TO-92
2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor
Physical Dimensions inches (millimeters) (Continued)
11378
Note Meets JEDEC dimensional requirements TO-236AB Note Controlling dimension millimeters Note Available also TO-236AA Contact your local National Semiconductor representative delivery ordering information Note Tape reel standard packaging method TO-236
TO-236AB (SOT-23) (Notes
LIFE SUPPORT POLICY NATIONAL'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL PRESIDENT NATIONAL SEMICONDUCTOR CORPORATION used herein Life support devices systems devices systems which intended surgical implant into body support sustain life whose failure perform when properly used accordance with instructions provided labeling reasonably expected result significant injury user
National Semiconductor Corporation 1111 West Bardin Road Arlington 76017 1(800) 272-9959 1(800) 737-7018
critical component component life support device system whose failure perform reasonably expected cause failure life support device system affect safety effectiveness
National Semiconductor Europe (a49) 0-180-530 Email cnjwge tevm2 Deutsch (a49) 0-180-530 English (a49) 0-180-532 Fran (a49) 0-180-532 Italiano (a49) 0-180-534
National Semiconductor Hong Kong 13th Floor Straight Block Ocean Centre Canton Tsimshatsui Kowloon Hong Kong (852) 2737-1600 (852) 2736-9960
National Semiconductor Japan 81-043-299-2309 81-043-299-2408
National does assume responsibility circuitry described circuit patent licenses implied National reserves right time without notice change said circuitry specifications

2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effec

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