Operation speed 2.5Gb/s, Built D-FF (Re-timing Bypass mode: Selectable

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Operation speed 2.5Gb/s, Built D-FF (Re-timing Bypass mode: Selectable

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2.5Gb/s Laser Driver with Re-Timing Function
Operation speed 2.5Gb/s, Built D-FF (Re-timing Bypass mode: Selectable) Compatible Input Output Voltage: 3.0Vpp (RL=50) Single -5.2V Power Supply Duty Ratio Adjustment Output Shutdown Switch Small Size: 16-Pin package (SSOP)-16
FMM3174VI
DESCRIPTION
FMM3174VI 2.5Gb/s(OC-48) Modulator Integrated(MI) laser driver with re-timing function. D-FF built re-timing bypass mode selectable using selection(SEL) signal. ABSOLUTE MAXIMUM RATINGS (VDD 0V,Ta=25°C)
Parameter Supply Voltage Input Voltage Power Supply Current Peak Current Control Voltage Bias Current Control Voltage Storage Temperature Symbol Tstg Ratings -7.0 -2.0 +1.5 -2.0 +2.1 Limit Typ. Max. -3.0 Unit
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tc=25°C, VSS=-5.2V)
Parameter Maximum Data Rate Output Voltage Output Residential Current VOUT IPDL Symbol Test Conditions -4.1V, -5.2V, "H", Output Voltage: 3.0Vpp (When Output Enable) -5.2V, RLXOUT -3.4V, -5.2V, RLOUT -1.7V -3.4V, -5.2V, -0.9V -5.2V, -5.2V Output Voltage: 3.0Vpp, 2.5Gb/s, Output Voltage: 3.0Vpp SEL="H" SEL="H" Rmk=1k Cmk=1nF Duty=100 Mark Density 100% Min. Unit Gb/s
Bias Current Bias Current when Shutdown Power Supply Current Rise Time Fall Time Duty Control Range Setup Time Hold Time Mark Density Monitor Output
IBsd Duty
-1.85 -0.10
-1.0 -0.0
-0.80
-0.98 -0.50 -0.40
Edition March 2001
FMM3174VI
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input Level High Input Level Peak Current Control Voltage Bias Current Control Voltage Duty Control Voltage Case Temperature Symbol Vdut
2.5Gb/s Laser Driver with Re-Timing Function
Test Conditions Limit Typ. Max. -5.20 -4.94 -0.90 -0.80 -1.70 -1.55 +1.1 +1.8 -0.80 Unit
Min. -5.46 -1.05 -2.00 -1.80
FMM3174VI Block Diagram
Vdut
IPMON
IBMON
Bias Current Driver HDIN
IBOUT
D-FF
Buffer
Voltage Driver
XOUT
HCKI
Mark Ratio Det.
2.5Gb/s Laser Driver with Re-Timing Function
FMM3174VI
OPERATION MODE
"SEL" signal determines operation mode between re-timing bypass modes. truth table follows:
Operation mode Re-timing (D-FF: active) Bypass(D-FF: bypassed)
SHUTDOWN CONTROL
Output Current Disable Enable
FUNCTION (Re-timing mode)
HDI(HDIN) H(L) L(H) -(-) Positive Edge, HCKI Negative Edge, Q/XQ: Hold Previous State XOUT
FUNCTION (Bypass mode)
HDI(HDIN) H(L) L(H) HCKI XOUT
FMM3174VI
2.5Gb/s Laser Driver with Re-Timing Function
Test Circuit
Vdut HDIN HCKI
IBMON IBOUT XOUT IPMON
Pulse Pattern Generator
Mode
Oscilloscope 20dB
Shutdown Signal Control
0~1k Rmk: Cmk: 1000pF Other Capacitor: 0.068µF Vtt: Termination Voltage
Output Duty Control Characteristics
Duty -1.7
-1.6
-1.5
-1.4
-1.3
-1.2
-0.9
Vdut
Output Waveform
V:1.0V/div.
H:100ps/div.
2.5Gb/s -5.2V, 25°C
2.5Gb/s Laser Driver with Re-Timing Function
FMM3174VI Assignment
FMM3174VI
IBMON
IPMON
IBOUT
XOUT
View
HDIN VDUT HCKI
Description
Name Vdut HDIN HCKI Description Bias Current Control Voltage Output Duty Control Voltage Data Input (True) Data Input (Invert) Clock Input Operation Mode Selection Output Current Shutdown Input Supply Voltage Name IPMON XOUT IBOUT IBMON Description Modulation Current Monitor (VSS:-5.2V) Modulation Current Control Voltage Modulation Current Output (Invert) Modulation Current Output (True) Bias Current Output Mark Density Monitor Output (Invert) Mark Density Monitor Output (True) Bias Current Monitor (VSS: -5.2V)
Ground Ground\ Heat Sink(Back Side) Ground
FMM3174VI
"VI" PACKAGE
0.18
2.5Gb/s Laser Driver with Re-Timing Function
Case Style "VI"
UNIT:
(0.45)
(0.25)
(0.9)
Heat Sink 2.8) (3.1) (3.6) (3.9)
(2.0)
Ground
(0.4)
0.65 4.55
0.15
0.13
(3.2) (3.3)
Unit:
further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas R.O.W.
2355 Zanker Jose, 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which hazardous human body environment. safety, observe following procedures:
www.fcsi.fujitsu.com
this product into mouth. alter form this product into gas, powder, liquid through burning, crushing, chemical processing these by-products dangerous human body inhaled, ingested, swallowed. Observe government laws company regulations when discarding this product. This product must discarded accordance with methods specified applicable hazardous waste procedures.
FME,
Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire United Kingdom TEL: 1628 504800 FAX: 1628 504888
FUJITSU QUANTUM DEVICES LIMITED
Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398
FUJITSU QUANTUM DEVICES SINGAPORE LTD. Hong Kong Branch
1101, Ocean Centre, Canton Tsim Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269
Fujitsu Limited reserves right change products specifications without notice. information does convey license under rights Fujitsu Limited others.
2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed U.S.A. FCSI0101M200

Operation speed 2.5Gb/s, Built D-FF (Re-timing Bypass mode: Selectable

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