Document Title Banks Power Synchronous DRAM Revision History Bank

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A43E16161
Document Title Banks Power Synchronous DRAM Revision History
Banks Power Synchronous DRAM
History
Initial issue
Issue Date
August 2005
Remark
PRELIMINARY
(August, 2005, Version 0.0)
AMIC Technology, Corp.
A43E16161
Features
power supply VDD: 1.8V VDDQ 1.8V LVCMOS compatible with multiplexed address banks Pulse cycle with address programs Latency Burst Length (1,2,4,8 full page) Burst Type (Sequential Interleave) inputs sampled positive going edge system clock Deep Power Down Mode masking Auto self refresh Clock Frequency (max) 105MHz CL=3 (-95) 133MHz CL=3 (-75)
Banks Power Synchronous DRAM
64ms refresh period cycle) Self refresh with programmable refresh period through EMRS cycle Programmable Power Reduction Feature partial array activation during Self-refresh through EMRS cycle Auto TCSR Industrial operating temperature range: series. Available 54-pin TSOP(II) package Package available lead free series)
General Description
A43E16161 33,554,432 bits Power synchronous high data rate Dynamic organized 1,048,576 words bits, fabricated with AMIC's high performance CMOS technology. Synchronous design allows precise cycle control with system clock. transactions possible every clock cycle. Range operating frequencies, programmable latencies allows same device useful variety high bandwidth, high performance memory system applications.
Configuration TSOP (II)
DQM0 DQM1
VDDQ
A43E16161V
VDDQ
VSSQ
DQ13 VDDQ VSSQ VSSQ DQ14 DQ12 DQ11 VSSQ VDDQ DQ15 DQ10
PRELIMINARY
(August, 2005, Version 0.0)
AMIC Technology, Corp.
A43E16161
Block Diagram
Control Bank Select Data Input Register
Buffer Refresh Counter
Decoder
Output Buffer
Sense
Address Register
LCBR
LRAS
Column Buffer
Column Decoder
Latency Burst Length
LRAS Programming Register LWCBR
LCAS LRAS LCBR
Timing Register
PRELIMINARY
(August, 2005, Version 0.0)
AMIC Technology, Corp.
A43E16161
Descriptions
Symbol Name Description
System Clock Chip Select
Active positive going edge sample inputs. Disables Enables device operation masking enabling inputs except CLK, Masks system clock freeze operation from next clock cycle.
Clock Enable
should enabled least clock prior command. Disable input buffers power down standby. Column addresses multiplexed same pins.
A0~A10
Address address RA0~RA10, Column address: CA0~CA8 Selects bank activated during address latch time.
Bank Select Address Selects band read/write during column address latch time. Address Strobe Latches addresses positive going edge with low. Enables access precharge. Column Address Strobe
Write Enable Data Input/Output Mask Data Input/Output Power Supply/Ground Data Output Power/Ground Connection
Latches column addresses positive going edge with low. Enables column access.
Enables write operation precharge. Makes data output Hi-Z, after clock masks output. Blocks data input when active. Data inputs/outputs multiplexed same pins. Power Supply: +1.7V 1.95V/Ground Provide isolated Power/Ground improved noise immunity.
DQMi DQ0-31 VDD/VSS VDDQ/VSSQ NC/RFU
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AMIC Technology, Corp.
A43E16161
Absolute Maximum Ratings*
Voltage relative (Vin, Vout -1.0V +2.6V Voltage supply relative (VDD, VDDQ .-1.0V 2.6V Storage Temperature (TSTG) -55°C +150°C Soldering Temperature Time (TSLODER) 260°C 10sec Power Dissipation (PD) 0.8W Short Circuit Current (Ios) 50mA
*Comments
Permanent device damage occur "Absolute Maximum Ratings" exceeded. Functional operation should restricted recommended operating condition. Exposure higher than recommended voltage extended periods time could affect device reliability.
Capacitance (TA=25°C, f=1MHz)
Parameter Symbol Condition Unit
Input Capacitance
A10, CLK, CKE, DQ31
Data Input/Output Capacitance
CI/O
Electrical Characteristics
Recommend operating conditions (Voltage referenced VSS=0V, commercial extended)
Parameter Symbol Unit Note
Supply Voltage Supply Voltage Input High Voltage Input Voltage Output High Voltage Output Voltage Input Leakage Current Output Leakage Current Output Loading Condition
VDDQ
0.8*VDDQ -0.3 VDDQ -1.5
1.95 1.95 VDDQ+0.3
Note -0.1mA 0.1mA Note Note
Fig. (Page
Note: (min) -1.5V (pulse width 5ns). input 0.3V, other pins under test Dout disabled, Vout
PRELIMINARY
(August, 2005, Version 0.0)
AMIC Technology, Corp.
A43E16161
Decoupling Capacitance Guide Line
Recommended decoupling capacitance added power line board
Parameter Symbol Value Unit
Decoupling Capacitance between Decoupling Capacitance between VDDQ VSSQ
CDC1 CDC2
0.01 0.01
Note: VDDQ pins separated each other. pins connected chip. VDDQ pins connected chip. VSSQ pins separated each other pins connected chip. VSSQ pins connected chip.
Electrical Characteristics
(Recommended operating condition unless otherwise noted, commercial extended)
Symbol Parameter Test Conditions Speed
Units Note
Icc1 Icc2 Icc2 ICC2N ICC2NS ICC3P ICC3N
Operating Current (One Bank Active) Precharge Standby Current power-down mode
Burst Length tRC(min), tCC(min), VIL(max), 15ns VIL(max), VIH(min), VIH(min), 15ns Input signals changed time during 30ns VIH(min), VIL(max), Input signals stable. VIL(max), 15ns VIH(min), VIH(min), 15ns Input signals changed time during 30ns 0mA, Page Burst bank Activated, tCCD tCCD (min) (min)
Banks
Precharge Standby Current power-down mode
Active Standby current power-down mode (One Bank Active)
ICC4 ICC5
Operating Current (Burst Mode) Refresh Current
ICC6
Self Refresh Current
0.2V
Banks
ICC7
Deep Power Down Current
0.2V
Note: Measured with outputs open. Addresses changed only time during tCC(min). Refresh period 64ms. Addresses changed only time during tCC(min).
PRELIMINARY
(August, 2005, Version 0.0)
AMIC Technology, Corp.
A43E16161
Operating Test Conditions
(VDD 1.7V~1.95V, commercial extended)
Parameter Value Unit
input levels Input timing measurement reference level Input rise time (See note3) Output timing measurement reference level Output load condition
1.8V 13.9K Output
VDDQ/0.2 VDDQ tr/tf VDDQ Fig.2
VOH(DC) VDDQ-0.2V, -0.1mA VOL(DC) 0.2V, 0.1mA
=0.5V VDDQ OUTPUT ZO=50 30pF
10.6K
30pF
(Fig. Output Load Circuit
(Fig. Output Load Circuit
Characteristics
operating conditions unless otherwise noted)
Symbol Parameter Unit Note
tSAC tSLZ tSHZ
cycle time valid Output delay Output data hold time high pulse width pulse width Input setup time Input hold time output Low-Z output Hi-Z
CL=3 CL=2 CL=3 CL=2 CL=3 CL=2 CL=3 CL=2 CL=3 CL=2
1000
1000
CL=3 CL=2
CL=CAS Latency.
*All parameters measured from half half.
Note Parameters depend programmed latency. clock rising time longer than 1ns, (tr/2-0.5)ns should added parameter. Assumed input rise fall time 1ns. longer than 1ns, transient time compensation should considered, i.e., [(tr tf)/2-1]ns should added parameter.
PRELIMINARY
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A43E16161
Operating Parameter
operating conditions unless otherwise noted)
Version Symbol Parameter Unit Note
tRRD(min) tRCD(min) tRP(min) tRAS(min)
active active delay delay precharge time
active time tRAS(max) tRC(min) tCDL(min) tRDL(min) tBDL(min) tCCD(min) cycle time Last data col. Address delay Last data precharge Last data burst stop Col. Address col. Address delay 72.5
Note: minimum number clock cycles determined dividing minimum time required with clock cycle time then rounding next higher integer. Minimum delay required complete write.
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A43E16161
Simplified Truth Table
Command CKEn-1 CKEn
A9~A0
Notes
Register
Mode Register
CODE CODE Addr. Column Addr. Column Addr.
Extended Mode Register Refresh Auto Refresh Self Refresh Bank Active Addr. Read Auto Precharge Disable Column Addr. Auto Precharge Enable Write Auto Precharge Disable Column Addr. Auto Precharge Enable Burst Stop Precharge Bank Selection Both Banks Clock Suspend Active Power Down Entry Exit Entry Precharge Power Down Mode Exit Operation Command Deep Power Down Entry Deep Power Down Exit Entry Exit
Valid, Don't Care, Logic High, Logic Low)
Note Code: Operand Code A0~A10, Program keys. (@MRS, EMRS) issued only when banks precharge state. command issued after clock cycle MRS, EMRS. Auto refresh functions same refresh DRAM. automatical precharge without precharge command meant "Auto". Auto/Self refresh issued only when banks precharge state. Bank select address. During burst read write with auto precharge, read/write command cannot issued. Another bank read/write command issued every burst length. Bust stop command valid every burst length. sampled positive going edge masks data-in very (Write latency masks data-out Hi-Z state after cycles. (Read latency After Deep Power Down mode exit, full initialization memory device mandatory.
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AMIC Technology, Corp.
A43E16161
Mode Register Filed Table Program Modes
Register Programmed with
Address
Function
(Note
(Note
W.B.L
(Note
Latency
Burst Length
Test Mode Type
Latency Latency
Burst Type Type
Burst Length BT=0 BT=1
Mode Register Vendor Only
Reserved Reserved Reserved Reserved Reserved
Sequential Interleave
Reserved Reserved Reserved 512(Full)
Reserved Reserved Reserved Reserved
Write Burst Length Length
Burst Single
Note RFU(Reserved Future Use) should stay during cycle. high during cycle, "Burst Read Single Write" function will enabled. must select Mode Register (vs. Extended Mode Register).
Extended Mode Register Table
Address (Ax)
(Note)
Bank Up/Down
PASR
have
Driver Strength
Driver Strength
Partial-Array Self Refresh: Banks Self-Refreshed banks (Bank Reserved Bank Reserved Reserved banks (Bank Reserved bank (Bank Reserved Reserved
Driver Strength Full
Note: must select Extended Mode Register (vs. Mode Register)
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A43E16161
Power Sequence
Apply power start clock, Attempt maintain "H", other pins condition inputs. Maintain stable power, stable clock input condition minimum 200µs. Issue precharge commands banks devices. Issue more auto-refresh commands. Issue mode register command initialize mode register. device ready normal operation. Issue extended mode register command define PASR operating type device after normal MRS. cf.) Sequence changed. EMRS cycle mandatory EMRS command needs issued only when PASR used. default state without EMRS command issued half driver strength full array refreshed. device ready operation selected EMRS. operating with PASR, PASR mode EMRS setting stage. order adjust another mode state PASR mode, additional EMRS required power sequence needed again this time. that case, banks have idle state prior adjusting EMRS set.
Burst Sequence (Burst Length Initial address Sequential Interleave
Burst Sequence (Burst Length
Initial address Sequential Interleave
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A43E16161
Device Operations
Clock (CLK)
clock input used reference SDRAM operations. operations synchronized positive going edge clock. clock transitions must monotonic between VIH. During operation with high inputs assumed valid state (low high) duration hold time around positive edge clock proper functionality specifications.
Clock Enable (CKE)
clock enable (CKE) gates clock onto SDRAM. goes synchronously with clock (set-up hold time same other inputs), internal clock suspended from next clock cycle state output burst address frozen long remains low. other inputs ignored from next clock cycle after goes low. When banks idle state goes synchronously with clock, SDRAM enters power down mode from next clock cycle. SDRAM remains power down mode ignoring other inputs long remains low. power down exit synchronous internal clock suspended. When goes high least "tSS CLOCK" before high going edge clock, then SDRAM becomes active from same clock edge accepting input commands.
Bank Select (BA)
clock signal must also asserted same time. After reaches desired voltage, minimum pause microseconds required with inputs condition. banks must precharged now. Perform minimum Auto refresh cycles stabilize internal circuitry. Perform MODE REGISTER cycle program latency, burst length burst type default value mode register undefined. clock cycle from mode register cycle, device ready operation. When above sequence used Power-up, out-puts will high impedance state. high impedance outputs guaranteed other power-up sequence. cf.) Sequence changed.
Mode Register (MRS)
This SDRAM organized independent banks 1,048,576 words bits memory arrays. inputs latched time assertion select bank used operation. bank select latched bank activate, read, write mode register precharge operations.
Address Input A10/AP)
address bits required decode 1,048,576 word locations multiplexed into address input pins (A0~A10/AP). address latched along with during bank activate command. column address latched along with during read write command.
Device Deselect
mode register stores data controlling various operation modes SDRAM. programs latency, addressing mode, burst length, test mode various vendor specific options make SDRAM useful variety different applications. default value mode register defined, therefore mode register must written after power operate SDRAM. mode register written asserting (The SDRAM should active mode with already high prior writing mode register). state address pins A0~A10/AP, same cycle going data written mode register. clock cycle required complete write mode register. mode register contents changed using same command clock cycle requirements during operation long banks idle state. mode register divided into various fields depending functionality. burst length field uses A0~A2, burst type uses addressing mode uses A4~A6, A7~A8, A10/AP, used vendor specific options test mode. write burst length programmed using A7~A9, A10/AP, must normal SDRAM operation. Refer table specific codes various burst length, addressing modes latencies. have enter Mode Register.
Extended Mode Register (EMRS)
When high, SDRAM performs operation (NOP). does initiate operation, needed complete operations which require more than single clock like bank activate, burst read, auto refresh, etc. device deselect also entered asserting high. high disables command decoder that address inputs ignored.
Power-Up
following sequence recommended POWER Power must applied either inputs pull them high other pins condition inputs before along with (and VDDQ) supply.
Extended Mode Register controls functions beyond those controlled Mode Register. These additional functions unique AMIC's Power SDRAM includes Partial-Array Self Refresh field (PASR) Output Drive Strength. Extended Mode Register programmed Mode Register command (BA=1) retains stored information until programmed again device loses power. Extended Mode Register must programmed with through "0". Extended Mode Register must loaded when banks idle bursts progress, controller must wait specified time initiating subsequent operation. Violating either these requirements results unspecified operation.
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A43E16161
Auto Temperature Compensated Self Refresh
Every cell DRAM requires refreshing capacitor losing charge over time. refresh rate dependent temperature. higher temperatures capacitor loses charge quicker than lower temperature, requiring cells refreshed more often. order save power consumption, according temperature, Mobile-SDRAM includes internal temperature sensor control units control self refresh cycle automatically.
Partial Array Self Refresh
Partial Array Self Refresh (PASR) feature allows controller select amount memory that will refreshed during SELF REFRESH. refresh options banks (banks bank (bank A7). WRITE READ commands occur bank selected during standard operation, only selected banks PASR will refreshed during SELF REFRESH. data banks will lost when bank option with A7=0 used. Similarly data will lost bank when bank option with A7=1 used down.
Driver Strength Control
with being high positive edge clock. bank must active least tRCD(min) before burst read command issued. first output appears latency number clock cycles after issue burst read command. burst length, burst sequence latency from burst read command determined mode register which already programmed. burst read initiated column address active row. address wraps around initial address does start from boundary such that number outputs from each equal burst length programmed mode register. output goes into high-impedance burst, unless burst read initiated keep data output gapless. burst read terminated issuing another burst read burst write same bank other active bank precharge command same bank. burst stop command valid every page burst length.
Burst Write
driver strength feature allows reduce drive strength I/O's device during frequency operation. This allows systems reduce noise associated with I/O's switching.
Bank Activate
bank activate command used select random idle bank. asserting with desired bank addresses, access initiated. read write operation occur after time delay tRCD(min) from time bank activation. tRCD(min) internal timing parameter SDRAM, therefore dependent operating clock frequency. minimum number clock cycles required between bank activate read write command should calculated dividing tRCD(min) with cycle time clock then rounding result next higher integer. SDRAM internal banks same chip shares part internal circuitry reduce chip area, therefore restricts activation both banks simultaneously. Also noise generated during sensing each bank SDRAM high requiring some time power supplies recover before other bank sensed reliably. tRRD(min) specifies minimum time required between activating different banks. number clock cycles required between different bank activation must calculated similar tRCD specification. minimum time required bank active initiate sensing restoring complete dynamic cells determined tRAS(min) specification before precharge command that active bank asserted. maximum time bank active state determined tRAS(max). number cycles both tRAS(min) tRAS(max) calculated similar tRCD specification.
Burst Read
burst write command similar burst read command, used write data into SDRAM consecutive clock cycles adjacent addresses depending burst length burst sequence. asserting with valid column address, write burst initiated. data inputs provided initial address same clock cycle burst write command. input buffer deselected burst length, even though internal writing have been completed yet. burst write terminated issuing burst read blocking data inputs burst write same other active bank. burst stop command valid only full page burst length where writing continues burst burst wrap around. write burst also terminated using blocking data precharging bank "tRDL" after last data input written into active row. OPERATION also.
Operation
used mask input output operation. works similar during read operation inhibits writing during write operation. read latency cycles from zero cycle write, which means masking occurs cycles later read cycle occurs same cycle during write cycle. operation synchronous with clock, therefore masking occurs complete cycle. signal important during burst interrupts write with read precharge SDRAM. asynchronous nature internal write, operation critical avoid unwanted incomplete writes when complete burst write required.
Precharge
burst read command used access burst data consecutive clock cycles from active active bank. burst read command issued asserting
precharge operation performed active bank asserting A10/AP with valid bank precharged. precharge command asserted anytime after tRAS(min) satisfied from bank activate command desired bank. "tRP" defined minimum time required precharge bank. minimum number clock cycles required complete precharge calculated dividing "tRP" with clock cycle time rounding next higher integer. Care should
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A43E16161
taken make sure that burst write completed used inhibit writing before precharge command asserted. maximum time bank active specified tRAS(max). Therefore, each bank precharged within tRAS(max) from bank activate command. precharge, bank enters idle state ready activated again. Entry Power Down, Auto refresh, Self refresh Mode register etc, possible only when banks idle state. time required complete auto refresh operation specified "tRC(min)". minimum number clock cycles required calculated dividing "tRC" with clock cycle time then rounding next higher integer. auto refresh command must followed NOP's until auto refresh operation completed. banks will idle state auto refresh operation. auto refresh preferred refresh mode when SDRAM being used normal data transactions. auto refresh cycle performed once 15.6us burst 4096 auto refresh cycles once 64ms.
Self Refresh
Auto Precharge
precharge operation also performed using auto precharge. SDRAM internally generates timing satisfy tRAS(min) "tRP" programmed burst length latency. auto precharge command issued same time burst read burst write asserting high A10/AP. burst read burst write command issued with A10/AP, bank left active until command asserted. Once auto precharge command given, commands possible that particular bank until bank achieves idle state.
Banks Precharge
banks precharged same time using Precharge command. Asserting
with high A10/AP after both banks have satisfied tRAS(min) requirement, performs precharge banks. after performing precharge all, banks idle state.
Auto Refresh
self refresh another refresh mode available SDRAM. self refresh preferred refresh mode data retention power operation SDRAM. self refresh mode, SDRAM disables internal clock input buffers except CKE. refresh addressing timing internally generated reduce power consumption. self refresh mode entered from banks idle state asserting with high Once self refresh mode entered, only state being matters, other inputs including clock ignored remain self refresh. self refresh exited restarting external clock then asserting high CKE. This must followed NOP's minimum time "tRC" before SDRAM reaches idle state begin normal operation. Upon exiting self refresh mode, AUTO REFRESH commands must issued every 15.6 less both SELF REFRESH AUTO REFRESH utilize refresh counter.
Deep Power Down Mode
storage cells SDRAM need refreshed every 64ms maintain data. auto refresh cycle accomplishes refresh single storage cells. internal counter increments automatically every auto refresh cycle refresh rows. auto refresh command issued asserting with high auto refresh command only asserted with banks being idle state device power down mode (CKE high previous cycle).
Deep Power Down Mode unique function Power SDRAMs with very standby currents. internal voltage generators inside Power SDRAMs stopped memory data will lost this mode. enter Deep Power Down Mode banks must precharged necessary Precharged Delay must occur.
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A43E16161
Basic feature Function Descriptions CLOCK Suspend
Click Suspended During Write (BL=4)
Clock Suspended During Read (BL=4)
Masked Internal Masked
DQ(CL2) DQ(CL3)
Written
Suspended Dout
Note: disable/enable=1 clock
Operation
Write Mask (BL=4)
Read Mask (BL=4)
Masked DQ(CL2) DQ(CL3) Hi-Z Hi-Z Masked
Data-in Mask 0CLK
Data-out Mask
Read Mask (BL=4)
DQ(CL2) DQ(CL3) Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z
Note makes data Hi-Z after clocks which should masked "L".
masks both data-in data-out.
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A43E16161
Interrupt
Read interrupted Read (BL=4)Note DQ(CL2) DQ(CL3) tCCD
Note2
Write interrupted Write
Note2
Write interrupted Read
tCCD DQ(CL2) DQ(CL3) tCDL Note3
Note2
tCCD
tCDL
Note3
Note "Interrupt", possible stop burst read/write external command before burst. Interrupt", stop burst read/write access; read, write block write. tCCD delay. (=1CLK) tCDL Last data column address delay. 1CLK).
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Interrupt (II) Read Interrupted Write
CL=2, BL=4
iii) CL=3, BL=4
Hi-Z
Hi-Z
Hi-Z
Note
iii)
Hi-Z
Hi-Z
Note
Note prevent contention, there should least between data data out. prevent contention, should issued which makes least between data data out.
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A43E16161
Write Interrupted Precharge
Masked Note
Note
Note inhibit invalid write, should issued. This precharge command burst write command should same bank, otherwise precharge interrupt only another bank precharge dual banks operation.
Precharge
Normal Write (BL=4) tRDL Read (BL=4) DQ(CL2) DQ(CL3)
Auto Precharge
Normal Write (BL=4)
Note Auto Precharge Starts
Read (BL=4) DQ(CL2) DQ(CL3)
Note Auto Precharge Starts
Note active command precharge bank issued after from this point. read/write command other active bank issued from this point. burst read/write with auto precharge, interrupt same/another bank illegal.
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Burst Stop Precharge Interrupt
Write Interrupted Precharge (BL=4) tRDL
Note
Write Burst Stop (BL=8)
STOP
tBDL (note
Read Interrupted Precharge (BL=4) DQ(CL2) DQ(CL3)
Note
Read Burst Stop (BL=4) DQ(CL2)
STOP
Note
DQ(CL3)
Mode Register
Note
1CLK
Note tRDL 2CLK, Last Data Precharge. tBDL 1CLK, Last Data Burst Stop Delay. Number valid output data after precharge burst stop latency=2,3 respectively. Both banks precharge necessary. issued only bank precharge state.
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Clock Suspend Exit Power Down Exit
Clock Suspend (=Active Power Down) Exit Internal
Note
Power Down (=Precharge Power Down) Exit
Internal
Note
Auto Refresh Self Refresh
Note
Auto Refresh
Internal
Note
Note
Note
Self Refresh
Note
Note Active power down more bank active state. Precharge power down both bank precharge state. auto refresh same refresh conventional DRAM. precharge commands required after Auto Refresh command. During from auto refresh command, other command accepted. Before executing auto/self refresh command, both banks must idle state. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry. During self refresh mode, refresh interval refresh operation performed internally. After self refresh entry, self refresh mode kept while LOW. During self refresh mode, inputs expect will don't cared, outputs will Hi-Z state. During from self refresh exit command, other command accepted. Before/After self refresh mode, AUTO REFRESH commands must issued every 15.6 less both SELF
REFRESH AUTO REFRESH utilize refresh counter.
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A43E16161
About Burst Type Control
Basic MODE Random MODE Sequential counting Interleave counting Random column Access tCCD A3="0". BURST SEQUENCE TABE.(BL=4,8) BL=1,2,4,8 full page wrap around. A3=" BURST SEQUENCE TABE.(BL=4,8) BL=4,8 BL=1,2 Interleave Counting Sequential Counting Every cycle Read/Write Command with random column address realize Random Column Access. That similar Extended Data (EDO) Operation convention DRAM.
About Burst Length Control
Basic MODE Special MODE BRSW A2,1,0 "000". auto precharge, tRAS should violated. A2,1,0 "001". auto precharge, tRAS should violated. A2,1,0 "010" A2,1,0 "011".
Interrupt MODE
A9="1". Read burst 1,2,4,8, full page/write Burst auto precharge write, tRAS should violated. Before burst, precharge command same bank Interrupt Stops read/write burst with precharge. (Interrupted Precharge) tRDL= with DQM, valid after burst stop CL=2,3 respectively During read/write burst with auto precharge, interrupt cannot issued. Before burst, read/write stops read/write burst starts read/write burst block write. Interrupt During read/write burst with auto precharge, interrupt issued.
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Power Sequence Auto Refresh
CLOCK
ADDR
High level necessary
Precharge (All Banks)
High-Z
A10/AP
Auto Refresh
Auto Refresh
Normal
Extended
Active (A-Bank) Don't care
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Single Read-Write-Read Cycles (Same Page) @CAS Latency=3, Burst Length=1
CLOCK tRAS
*Note
High
tRCD ADDR
*Note *Note
tCCD
*Note *Note *Note *Note
*Note
*Note
*Note
*Note
A10/AP
tRAC tSAC tSLZ tSHZ
Active
Read
Write
Read Precharge
Active
Don't care
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A43E16161
Note inputs don't care when high high going edge. Bank active read/write controlled
Active Read/Write
Bank Bank
Enable disable auto precharge function controlled A10/AP read/write command.
A10/AP Operation
Disable auto precharge, leave bank active burst. Disable auto precharge, leave bank active burst. Enable auto precharge, precharge bank burst. Enable auto precharge, precharge bank burst.
A10/AP control bank precharge when precharge command asserted.
A10/AP Precharge
Bank Bank Both Bank
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Read Write Cycle Same Bank @Burst Length=4
CLOCK
tRCD *Note
High
*Note
ADDR
A10/AP
tRAC *Note tSAC tRAC *Note tSAC *Note tRDL *Note
tSHZ
tRDL
tSHZ
Active (A-Bank)
Read (A-Bank)
Precharge (A-Bank)
Active (A-Bank)
Write (A-Bank)
Precharge (A-Bank) Don't care
*Note Minimum cycle times required complete internal DRAM operation. precharge interrupt burst cycle. [CAS latency-1] valid output data available after enters precharge. Last valid output will Hi-Z after tSHZ from clock. Access time from address. tCC*(tRCD latency-1) tSAC Output will Hi-Z after burst. (1,2,4 Full page burst, burst wrap-around.
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Page Read Write Cycle Same Bank @Burst Length=4
CLOCK
High
tRCD
*Note
ADDR
A10/AP
tCDL tRDL
*Note *Note1 *Note3
(CL=2)
(CL=3)
Active (A-Bank)
Read (A-Bank)
Read (A-Bank)
Write (A-Bank)
Write (A-Bank)
Precharge (A-Bank)
Don't care
*Note write data before burst read ends, should asserted three cycle prior write command avoid contention. precharge will interrupt writing. Last data input, tRDL before precharge, will written. should mask invalid input data precharge command cycle when asserting precharge before burst. Input data after precharge cycle will masked internally.
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Page Read Cycle Different Bank @Burst Length
CLOCK
*Note
High
*Note
ADDR
A10/AP
(CL=2)
QAa0 QAa1 QAa2 QAa3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1
(CL=3)
QAa0 QAa1 QAa2 QAa3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1
Active (A-Bank)
Active (B-Bank) Read (A-Bank)
Read (B-Bank)
Read (A-Bank)
Read (B-Bank)
Read (A-Bank)
Precharge (A-Bank)
Don't care
Note don't care when RAS,
high clock high going edge.
interrupt burst read precharge, both read precharge banks must same.
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A43E16161
Page Write Cycle Different Bank @Burst Length=4
CLOCK
High
*Note
ADDR
A10/AP
DAa0 DAa1
DAa2
DAa3
DBb0 DBb1 DBb2 DBb3
DAc0
DAc1
DBd0 DBd1 tRDL
tCDL
*Note
Active (B-Bank) Active with (A-Bank) Write (A-Bank)
Write (B-Bank)
Write (A-Bank) Write (B-Bank)
Precharge (Both Banks)
Don't care
Note: interrupt burst write precharge, should asserted mask invalid input data. interrupt burst write precharge, both write precharge banks must same.
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Read Write Cycle Different Bank @Burst Length=4
CLOCK
High
ADDR
A10/AP
tCDL *Note
(CL=2)
QAa0
QAa1 QAa2 QAa3
DBb0 DBb1 DBb2 DBb3
QAc0 QAc1 QAc2
(CL=3)
QAa0 QAa1 QAa2 QAa3
DBb0 DBb1 DBb2 DBb3
QAc0 QAc1
Active (A-Bank)
Read (A-Bank)
Precharge (A-Bank)
Write (B-Bank)
Read (A-Bank)
Active (B-Bank)
Active (A-Bank) Don't care
Note tCDL should complete write.
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A43E16161
Read Write Cycle with Auto Precharge @Burst Length=4
CLOCK
High
ADDR
A10/AP
(CL=2)
QAa0
QAa1
QAa2 QAa3
DBb0
DBb1
DBb2
DBb3
(CL=3)
QAa0
QAa1 QAa2
QAa3
DBb0
DBb1
DBb2
DBb3
Active (A-Bank)
Read with Auto Precharge (A-Bank) Active (B-Bank)
Auto Precharge Start Point (A-Bank)
Write with Auto Precharge (B-Bank)
Auto Precharge Start Point (B-Bank)
Don't care
*Note tRCD should controlled meet minimum tRAS before internal precharge start. case Burst Length=1 BRSW mode)
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Read Write Cycle with Auto Precharge @Burst Length=4
CLOCK
High
ADDR
A10/AP
(CL=2)
(CL=3)
Active (A-Bank)
Read with Auto Charge (A-Bank)
Read without Auto Precharge (B-Bank) Auto Precharge Strart Point (A-Bank) *Note
Precharge (B-Bank)
Active (A-Bank)
Write with Auto Precharge (A-Bank)
Active (B-Bank) Don't care
Note
When Read(Write) command with auto precharge issued A-Bank after Bank activation. read(Write) command without auto precharge issued B-Bank before Bank auto precharge starts, Bank auto precharge will start Bank read command input point. command issued Bank during after Bank auto precharge starts.
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A43E16161
Read Write Cycle with Auto Precharge @Burst Length=4
CLOCK
High
ADDR
A10/AP
(CL=2)
(CL=3)
Note
Active (A-Bank)
Read with Auto Preharge (A-Bank)
Auto Precharge Read with Start Point Auto Precharge (B-Bank) (A-Bank) Active (B-Bank)
Auto Precharge Start Point (B-Bank)
Don't care
Note command A-bank allowed this period. determined from auto precharge start point
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A43E16161
Read Interrupted Precharge Command Read Burst Stop Cycle (@Burst Length Full Page)
CLOCK
High
ADDR
Note Note
A10/AP
Note
(CL=2)
QAa0 QAa1
QAa2 QAa3 QAa4
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
(CL=3)
QAa0
QAa1 QAa2 QAa3 QAa4
QAb0 QAb1 QAb2 QAb3
QAb4 QAb5
Active (A-Bank)
Read (A-Bank)
Burst Stop
Read (A-Bank)
Precharge (A-Bank)
Don't care
Note full page mode, burst wrap-around burst. auto precharge impossible. About valid DQ's after burst stop, same case interrupt.
Both cases illustrated above timing diagram. label them. burst write, burst stop interrupt should compared carefully. Refer timing diagram "Full page write burst stop cycle". Burst stop valid every burst length.
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Write Interrupted Precharge Command Write Burst Stop Cycle Burst Length Full Page)
CLOCK
High
ADDR
Note Note
A10/AP
tBDL tRDL
Note
Note
DAa0
DAa1
DAa2
DAa3 DAa4
DAb0
DAb1
DAb2
DAb3
DAb4
DAb5
Active (A-Bank)
Write (A-Bank)
Burst Stop
Write (A-Bank)
Precharge (A-Bank)
Don't care
Note full page mode, burst wrap-around burst. auto precharge impossible. Data-in cycle burst stop command cannot written into corresponding memory cell. defined parameter tBDL(=1CLK). Data-in cycle interrupted precharge cannot written into corresponding memory cell. defined parameter tRDL(=2CLK). write interrupted precharge command needed ensure tRDL 2CLK. should mask invalid input data precharge command cycle when asserting precharge before burst. Input data after precharge cycle will masked internally. Burst stop valid only every burst length.
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A43E16161
Burst Read Single Write Cycle @Burst Length=2, BRSW
CLOCK
High
Note
ADDR
A10/AP
(CL=2)
DAa0
QAb0
QAb1
DBc0
QAd0
QAd1
(CL=3)
DAa0
QAb0 QAb1
DBc0
QAd0
QAd1
Active (A-Bank)
Active (B-Bank)
Active (A-Bank)
Read (A-Bank)
Precharge (A-Bank)
Write (A-Bank)
Read with Auto Precharge (A-Bank)
Write with Auto Precharge (B-Bank) Don't care
Note BRSW mode enabled setting "High" (Mode Register Set). BRSW Mode, burst length write fixed regardless programed burst length. When BRSW write command with auto precharge executed, keep mind that tRAS should violated. Auto precharge executed burst-end cycle, case BRSW write command, next cycle starts precharge.
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A43E16161
Clock Suspension Operation Cycle @CAS Latency Burst Length=4
CLOCK
ADDR
A10/AP
Note
tSHZ
tSHZ
Active
Read
Clock Suspension
Read
Read Write
Write Clock Suspension
Don't care
Note needed prevent contention.
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A43E16161
Active/Precharge Power Down Mode @CAS Lantency=2, Burst Length=4
CLOCK
Note
Note
*Note
A10/AP
ADDR
Precharge Power-down Entry
Precharge Power-down Exit Active Active Power-down Entry
Read
Precharge
Active Power-down Exit Don't care
Note banks should idle state prior entering precharge power down mode. should high least "1CLK tSS" prior active command. Cannot violate minimum refresh specification. (32ms)
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A43E16161
Self Refresh Entry Exit Cycle
CLOCK
Note
Note
Note
Note
Note
Note
min.
Note
Note
Hi-Z
Hi-Z
Self Refresh Entry
Self Refresh Exit
A10/AP
ADDR
Note ENTER SELF REFRESH MODE with should same clock cycle. After clock cycle, inputs including system clock don't care except CKE. device remains self refresh mode long stays "Low". (cf.) Once device enters self refresh mode, minimum tRAS required before exit from self refresh. EXIT SELF REFRESH MODE System clock restart stable before returning high. starts from high. Minimum required after going high complete self refresh exit. Before/After self refresh mode, AUTO REFRESH commands must issued every 15.6s less both SELF REFRESH AUTO REFRESH utilize refresh counter.
Auto Refresh Don't care
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A43E16161
Mode Register Cycle Auto Refresh Cycle
CLOCK
*Note
High
High
Note
Note
Hi-Z
Hi-Z
Command
Auto Refresh
ADDR
Command Don't care
Both banks precharge should completed before Mode Register cycle auto refresh cycle.
MODE REGISTER CYCLE Note
activation same clock cycle with address will internal mode register.
Minimum clock cycles should before activation.
Please refer Mode Register table.
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A43E16161
Deep Power Down Mode Entry
ADDR
input output High-Z
Precharge Command Normal Mode
Deep Power Down Entry Deep Power Down Mode
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A43E16161
Deep Power Down Mode Exit
Deep Power Down Exit
Banks Precharge
Auto Refresh
Auto Refresh
Mode Register
Extended Mode Register
Command Accepted Here
deep power down mode exited asserting high. After exit, following sequence needed enter command: Maintain input conditions minimum 200µs Issue precharge commands banks device Issue eight more auto-refresh commands Issue mode register command initialize mode register Issue extended mode register command initialize extended mode register
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Function Truth Table (Table
Current State
Address
Action
Note
Code
ILLEGAL Active; Latch Address Auto Refresh Self Refresh Mode Register Access ILLEGAL
A10/AP ILLEGAL
IDLE
Active
CA,A10/AP Begin Read; Latch Determine CA,A10/AP Begin Write; Latch Determine CA,AP ILLEGAL Precharge ILLEGAL NOP(Continue Burst Active) NOP(Continue Burst Active) Term burst Active Term burst; Begin Write; Latch Determine ILLEGAL Term Burst; Precharge timing Reads ILLEGAL NOP(Continue Burst EndRow Active) NOP(Continue Burst EndRow Active) ILLEGAL
Read
CA,A10/AP Term burst; Begin Read; Latch Determine
Write
CA,A10/AP Term burst; Begin Read; Latch Determine CA,A10/AP Term burst; Begin Read; Latch Determine A10/AP ILLEGAL Term Burst; Precharge timing Writes ILLEGAL NOP(Continue Burst EndPrecharge) NOP(Continue Burst EndPrecharge) ILLEGAL
Read with Auto Precharge
CA,A10/AP ILLEGAL CA,A10/AP ILLEGAL ILLEGAL ILLEGAL
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Function Truth Table (Table Continued)
Current State
Address
Action
Note
NOP(Continue Burst EndPrecharge) NOP(Continue Burst EndPrecharge) ILLEGAL
Write with Auto Precharge
CA,A10/AP ILLEGAL CA,A10/AP ILLEGAL ILLEGAL ILLEGAL NOPIdle after NOPIdle after ILLEGAL
Precharge
CA,A10/AP ILLEGAL ILLEGAL NOPIdle after ILLEGAL NOPRow Active after tRCD NOPRow Active after tRCD ILLEGAL
Activating
CA,A10/AP ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOPIdle after NOPIdle after ILLEGAL ILLEGAL ILLEGAL
Refreshing
Abbreviations Address Operation Command
Bank Address Column Address
Auto Precharge Precharge
Note: entries assume that active (High) during preceding clock cycle current clock cycle. Illegal bank specified state Function legal bank indicated depending state that bank. Must satisfy contention, turn around, and/or write recovery requirements. bank precharging idle state. precharge bank indicated (and PA). Illegal banks idle.
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A43E16161
Function Truth Table (Table
Current State
Address
Action
Note
INVALID Exit Self RefreshABI after Exit Self RefreshABI after ILLEGAL ILLEGAL ILLEGAL NOP(Maintain Self Refresh) INVALID Exit Power DownABI Exit Power DownABI ILLEGAL ILLEGAL ILLEGAL NOP(Maintain Power Down Mode) Refer Table Enter Power Down Enter Power Down ILLEGAL ILLEGAL ILLEGAL Enter Self Refresh ILLEGAL Refer Operations Table Begin Clock Suspend next cycle Exit Clock Suspend next cycle Maintain clock Suspend
Self Refresh Both Bank Precharge Power Down Banks Idle State Other than Listed Above
Abbreviations Banks Idle Note: After CKE's high transition exit self refresh mode. time tRC(min) elapse after CKE's high transition issue command. high transition asynchronous restarts internal clock. minimum setup time "tSS clock" must satisfied before command other than exit. Power-down self refresh entered only from banks idle state. Must legal command.
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A43E16161
Ordering Information
Part Min. Cycle Time (ns) Max. Clock Frequency (MHz) Access Time Package
A43E16161V-75F A43E16161V-75UF A43E16161V-95F A43E16161V-95UF
Pb-Free TSOP (II) Pb-Free TSOP (II) Pb-Free TSOP (II) Pb-Free TSOP (II)
Note: industrial operating temperature range
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A43E16161
Package Information TSOP (Type Outline Dimensions
Detail
unit: inches/mm
0.21
0.665
Detail
Seating Plane
Dimensions inches
Dimensions 0.05 0.95 0.30 0.12 1.00 22.22 0.71 11.76 10.16 0.80 1.20 0.15 1.05 0.45 0.21
Symbol
0.002 0.037 0.012 0.005
0.004 0.039 0.875 0.028 0.463 0.400 0.031
0.047 0.006 0.041 0.018 0.008
0.016 0.005 0.005
0.020 0.031
0.024 0.010
0.40 0.12 0.12
0.50 0.80
0.60 0.25
Notes: maximum value dimension includes flash. Dimension does include resin fins. Dimension includes flash.
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Document Title Banks Power Synchronous DRAM Revision History Bank

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