Low-Noise Matched Transistor Array THAT 380G APPLICATIONS Microph

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Low-Noise Matched Transistor Array THAT 380G APPLICATIONS Microph

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Matched Matched Monolithic Construction Noise 0.75 (PNP) (NPN) High Speed (NPN) (PNP) Excellent Matching typical between devices same gender Dielectrically Isolated crosstalk, high isolation, high temp operation VCEO
Low-Noise Matched Transistor Array THAT 380G APPLICATIONS
Microphone Preamplifiers Current Sources Current Mirrors Log/Antilog Amplifiers Multipliers Servos
Description
THAT 380G large-geometry, 8-transistor, monolithic NPN/PNP array intended multichip modules, hybrids, chip-on-board applications. individual devices exhibit both high speed noise, well-matched between transistors same gender. Fabricated dielectrically isolated, complementary bipolar process, each transistor electrically insulated from others layer insulating oxide (not reverse-biased junctions used conventional arrays) exhibit inter-device crosstalk isolation similar that expected from discrete transistors. resulting collector-to-substrate capacitance produces typical 350MHz (325 PNPs). Substrate 93biasing required normal operation, though substrate should grounded optimize speed minimize crosstalk. While guaranteed meet datasheet specifications outside commercial temperature range, transistors 380G will typically operate much higher temperatures than ordinary junction-isolated devices with similar packing density. Quad transistor arrays packages with similar performance characteristics also available from THAT Corporation. Please contact directly through your local distributor more information.
THAT
17C1
380G layout THAT Corporation; Sumner Street; Milford, Massachusetts 01757-1656; Tel: 9200; Fax: 0990; Web: www.thatcorp.com
600042
Page
THAT380G Transistor Array
SPECIFICATIONS
Maximum Ratings 25°C)
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Emitter Current Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Emitter Current Collector-Collector Voltage Emitter-Emitter Voltage Operating Temperature Range Maximum Junction Temperature Storage Temperature Symbol BVCEO BVCBO BVEBO BVCEO BVCBO BVEBO BVCC BVEE TJMAX TSTORE mAdc, mAdc, mAdc, Conditions mAdc, mAdc, IE=0 mAdc, ±100 ±100 ±200 ±200 Units
Electrical Characteristics
Parameter Current Gain Symbol Conditions Current Gain Matching Noise Voltage Density Gain-Bandwidth Product DVBE (VBE3-VBE4 ;VBE5-VBE6) Dhfe ±0.5 ±0.5 Units
THAT Corporation; Sumner Street; Milford, Massachusetts 01757-1656; Tel: 9200; Fax: 0990; Web: www.thatcorp.com
600042
Page
SPECIFICATIONS (Cont'd)
Parameter (IB3-IB4, IB5-IB6) Symbol Conditions Collector-Base Leakage Current ICBO Bulk Resistance Base Spreading Resistance Collector Saturation Voltage Output Capacitance VCE(SAT) 100mA ±500 0.05 ±1500 Units
Collector-CollectorCapacitance (Q3-Q4, Q5-Q6)
Electrical Characteristics
Parameter Current Gain Symbol Conditions Current Gain Matching Noise Voltage Density Gain-Bandwidth Product DVBE (VBE1-VBE2; VBE7-VBE8) Dhfe (IB1-IB2; IB7-IB8) Collector-Base Leakage Current Bulk Resistance Base Spreading Resistance Collector Saturation Voltage Output Capacitance ICBO VCE(SAT) 10mA -0.05 0.75 ±0.5 ±0.5 ±700 ±1800 Units
Collector-Collector Capacitance (Q1-Q2; Q7-Q8)
specifications subject change without notice. Unless otherwise noted, TA=25°C.
THAT Corporation; Sumner Street; Milford, Massachusetts 01757-1656; Tel: 9200; Fax: 0990; Web: www.thatcorp.com
Page
THAT380G Transistor Array
1613u
-668.5
-477.5
-286.5
286.5
477.5
THAT
668.5
-95.5
*0.021" 0.001
95.5
477.5 411.5 286.5
17C1
95.5 -95.5
-286.5 -411.5 -477.5
Custom thicknesses available. Contact THAT Corporation more information.
Figure dimensions
Information furnished THAT Corporation believed accurate reliable. However responsibility assumed THAT Corporation it's infringements patents other rights third parties which result from it's use. LIFE SUPPORT POLICY THAT Corporation products designed life support equipment where malfunction such products reasonably expected result personal injury death. buyer uses sells such products life suport application buyer's risk agrees hold harmless THAT Corporation from damages, claims, suits expense resulting from such use. CAUTION: THIS (ELECTROSTATIC DISCHARGE) SENSITIVE DEVICE. damaged currents generated electrostatic discharge. Static charge therefore dangerous voltages accumulate discharge without detection causing loss function performance occur. transistors this device unprotected order maximize performance flexibility. They more sensitive damage than many other which include protection devices their inputs. Note that pins (not just "inputs") susceptible. preventative measures when storing handling this device. Unused devices should stored conductive packaging. Packaging should discharged destination socket before devices removed. damage occur these devices even after they installed board-level assembly. Circuits should include specific appropriate protection.
THAT Corporation; Sumner Street; Milford, Massachusetts 01757-1656; Tel: 9200; Fax: 0990; Web: www.thatcorp.com
1232u

Low-Noise Matched Transistor Array THAT 380G APPLICATIONS Microph

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