N-channel 0.018 DPAK STripFETII Power MOSFET Type STD45NF75 VDSS
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STD45NF75
N-channel 0.018 DPAK STripFETII Power MOSFET
Type STD45NF75 VDSS RDS(on) <0.024 40A(1)
Current limited package
100% avalanche tested Gate charge minimized
DPAK
Description
This Power MOSFET latest development STMicroelectronics unique "Single Feature SizeTM" strip-based process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STD45NF75T4 Marking D45NF75 Package DPAK Packaging Tape reel
February 2007
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www.st.com
Contents
STD45NF75
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Spice thermal model Test circuit
Package mechanical data Packing mechanical data Revision history
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STD45NF75
Electrical ratings
Electrical ratings
Table
Symbol VDGR ID(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS Drain-gate voltage (RGS Gate- source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Derating Factor Value 0.67 Max. operating junction temperature Unit W/°C V/ns
Ptot
dv/dt
Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature
Tstg
Current limited package Pulse width limited safe operating area. 40A, di/dt 800A/µs, V(BR)DSS, TJMAX Starting 20A,
Table
Rthj-case Rthj-pcb
Thermal data
Thermal resistance junction-case Thermal resistance junction-pcb Maximum lead temperature soldering purpose(1) Figure Figure °C/W °C/W
sec. from case
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Electrical characteristics
STD45NF75
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS Gate-body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions 250µA, rating rating, 125°C ±20V VGS, 250µA 10V, 0.018 Min. ±100 0.024 Typ. Max. Unit
IDSS
IGSS VGS(th) RDS(on)
Table
Symbol Ciss Coss Crss td(on) td(off)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions 25V, Min. Typ. 1760 Max. Unit
25V, 1MHz,
37V, (see Figure 60V, 40A, 10V, (see Figure
Pulsed: Pulse duration duty cycle 1.5%.
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STD45NF75
Electrical characteristics
Table
Symbol ISDM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage 40A, Test conditions Min. Typ. Max. Unit
Reverse recovery time 40A, di/dt 100A/µs, Reverse recovery charge 30V, 150°C Reverse recovery current (see Figure
Pulse width limited safe operating area. Pulsed: Pulse duration duty cycle 1.5%
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Electrical characteristics
STD45NF75
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Transconductance
Figure
Static drain-source resistance
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STD45NF75 Figure Gate charge gate-source voltage Figure
Electrical characteristics Capacitance variations
Figure
Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source-drain diode forward characteristics
Figure Normalized breakdown voltage temperature
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Electrical characteristics Figure Power derating Figure current
STD45NF75
Figure Thermal resistance Rthj-a copper area
Figure power dissipation copper area
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STD45NF75
Electrical characteristics
Figure Allowable time avalanche
previous curve gives safe operating area unclamped inductive loads, single pulse repetitive, under following conditions:
PD(AVE) (1.3 BVDSS IAV) EAS(AR) PD(AVE) Where: allowable current avalanche PD(AVE) average power dissipation avalanche (single pulse) time avalanche rate above fixed IAV, following equation must applied: (Tjmax TCASE)/ (1.3 BVDSS Zth) Where: value coming from normalized thermal response fixed pulse width equal TAV.
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Spice thermal model
STD45NF75
Spice thermal model
Table Spice parameter
Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 CTHERM5 CTHERM6 Node Value 10-4 10-3 10-2 10-2 9.65 10-2 10-1
RTHERM1 RTHERM2 RTHERM3 RTHERM4 RTHERM5 RTHERM6
0.045 0.105 0.150 0.225 0.375 0.600
Figure
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STD45NF75
Test circuit
Test circuit
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped Inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
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Package mechanical data
STD45NF75
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
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STD45NF75
Package mechanical data
DPAK MECHANICAL DATA
DIM. MIN. (L1) 0.03 0.64 0.45 0.48 2.28 9.35 0.023 0.008 10.1 0.173 0.368 0.039 0.110 0.031 0.039 0.252 0.185 0.090 0.181 0.397 MAX. 0.23 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch
0068772-F
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Packing mechanical data
STD45NF75
Packing mechanical data
DPAK FOOTPRINT
dimensions millimeters
TAPE REEL SHIPMENT
REEL MECHANICAL DATA
DIM. 12.8 20.2 16.4 22.4 18.4 13.2 MIN. MAX. 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM.
BASE 2500
MIN. 10.4 1.65 2.55
15.7 16.3
inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.85 2.75
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STD45NF75
Revision history
Revision history
Table
Date 22-Jun-2004 09-Sep-2004 11-Jul-2006 20-Feb-2007
Revision history
Revision Preliminary version Complete version template, content change Typo mistake page Changes
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STD45NF75
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