N-channel DPAK SuperFREDMeshPower MOSFET Type STD3NK60ZD VDS

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N-channel DPAK SuperFREDMeshPower MOSFET Type STD3NK60ZD VDS

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STD3NK60ZD
N-channel DPAK SuperFREDMeshPower MOSFET
Type STD3NK60ZD
VDSS
RDS(on)
100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very intrinsic capacitances Fast internal recovery diode
DPAK
Application
Switching applications Figure Internal schematic diagram
Description
SuperFREDMeshseries associates advantages reduced on-resistance, Zener gate protection very high dv/dt capability with fast body-drain recovery diode. Such series complements "FDmeshTM" advanced technology.
Table
Device summary
Marking 3NK60ZD Package DPAK Packaging Tape reel
Order code STD3NK60ZD
September 2008
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www.st.com
Contents
STD3NK60ZD
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuits
Package mechanical data Package mechanical data Revision history
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STD3NK60ZD
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage (VGS Gate- source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Total dissipation Derating factor Value 1.51 0.36 Unit W/°C V/ns
PTOT dv/dt Tstg
Peak diode recovery voltage slope Operating junction temperature Storage temperature
Pulse width limited safe operating area di/dt A/µs, V(BR)DSS
Table
Symbol
Thermal data
Parameter Value Unit °C/W °C/W
Rthj-amb Thermal resistance junction-ambient Rthj-pcb Thermal resistance junction-pcb Maximum lead temperature soldering purpose
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited max) Single pulse avalanche energy (starting IAR, value Unit
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Electrical characteristics
STD3NK60ZD
Electrical characteristics
(Tcase unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on
/off states
Parameter Drain-source breakdown voltage Test conditions Min. 3.75 Typ. Max. Unit
rating Zero gate voltage drain current (VGS rating, TC=125 Gate-body leakage current (VDS
Gate threshold voltage VGS, Static drain-source resistance
Table
Symbol Ciss Coss Crss Coss eq(1)
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 11.8 Max. Unit
MHz,
(see Figure
Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
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STD3NK60ZD
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions (see Figure Min. Typ. Unit
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs (see Figure di/dt A/µs (see Figure Test conditions Min. Typ. Max. Unit
IRRM IRRM
Pulse width limited safe operating area Pulsed: Pulse duration duty cycle 1.5%
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Electrical characteristics
STD3NK60ZD
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Transconductance
Figure
Static drain-source resistance
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STD3NK60ZD Figure Gate charge gate-source voltage Figure
Electrical characteristics Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source-drain diode forward characteristics
Figure Normalized BVDSS temperature
7/14
Electrical characteristics Figure Maximum avalanche energy temperature
STD3NK60ZD
8/14
STD3NK60ZD
Test circuits
Test circuits
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped Inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
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Package mechanical data
STD3NK60ZD
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
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STD3NK60ZD
Package mechanical data
TO-252 (DPAK) mechanical data
DIM. 0.60 0.20 4.40 9.35 2.80 0.80 6.40 4.70 2.28 4.60 10.10 min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
0068772_G
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Package mechanical data
STD3NK60ZD
Package mechanical data
DPAK FOOTPRINT
dimensions millimeters
TAPE REEL SHIPMENT
REEL MECHANICAL DATA
DIM. 12.8 20.2 16.4 22.4 18.4 13.2 MIN. MAX. 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM.
BASE 2500
MIN. 10.4 1.65 2.55
15.7 16.3
inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.85 2.75
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STD3NK60ZD
Revision history
Revision history
Table
Date 24-Jul-2008 11-Sep-2008
Document revision history
Revision First release Document status changed from preliminay data datasheet Changes
13/14
STD3NK60ZD
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N-channel DPAK SuperFREDMeshPower MOSFET Type STD3NK60ZD VDS

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