N-channel 650V@Tjmax 0.09 TO-247 MDmeshPower MOSFET Type STW45NM6
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STW45NM60
N-channel 650V@Tjmax 0.09 TO-247 MDmeshPower MOSFET
Type STW45NM60
VDSS (@Tjmax) 650V
RDS(on) 0.11
High dv/dt avalanche capabilities 100% avalanche tested input capacitance gate charge gate input resistance TO-247
Description
MDmeshis revolutionary Power MOSFET technology that associates multiple drain process with Company's PowerMESHhorizontal layout. resulting product outstanding on-resistance, impressively high dv/dt excellent avalanche characteristics. adoption Company's proprietary strip technique yields overall dynamic performance that significantly better than that similar competitor's products.
Internal schematic diagram
Application
Switching application
Order code
Part number STW45NM60 Marking W45NM60 Package TO-247 Packaging Tube
April 2007
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www.st.com
Contents
STW45NM60
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuit
Package mechanical data Revision history
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STW45NM60
Electrical ratings
Electrical ratings
Table
Symbol PTOT
Absolute maximum ratings
Parameter Gate- source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Derating factor Value 3.33 Unit W/°C V/ns
dv/dt
Peak diode recovery voltage slope Storage temperature Max. operating junction temperature
Tstg
Pulse width limited safe operating area 45A, di/dt 400A/µs, V(BR)DSS
Table
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-amb Maximum lead temperature soldering purpose Value Unit °C/W °C/W
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited max) Single pulse avalanche energy (starting IAR, value Unit
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Electrical characteristics
STW45NM60
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage Drain current (VGS Gate-body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions rating rating, ±30V VGS, 250µA 10V, 22.5A 0.09 Min. ±100 0.11 Typ. Max. Unit
Table
Symbol Ciss Coss Crss Coss eq.(2)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions ID(on) RDS(on)max, 22.5A Min. Typ. Max. 3800 1250 Unit
25V, MHz,
480V Gate Bias test signal level 20mV open drain 400V, 45A, Figure
Pulsed: Pulse duration duty cycle 1.5%. Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
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STW45NM60
Electrical characteristics
Table
Symbol td(on) tr(Voff)
Switching times
Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions 250V, 22.5A Figure 400V, 45A, 4.7, Figure Min. Typ. Max. Unit
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 45A, 45A, di/dt 100A/µs, 25°C Figure 45A, di/dt 100A/µs, 150°C Figure Test conditions Min. Typ. Max. Unit
IRRM IRRM
Pulsed: Pulse duration duty cycle 1.5%.
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Electrical characteristics
STW45NM60
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Transconductance
Figure
Static-drain source resistance
6/12
STW45NM60 Figure Gate charge gate-source voltage Figure
Electrical characteristics Capacitance variations
Figure
Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source-drain diode forward characteristics
Figure Normalized BVDSS temperature
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Test circuit
STW45NM60
Test circuit
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
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STW45NM60
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
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Package mechanical data
STW45NM60
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM.
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STW45NM60
Revision history
Revision history
Table
Date 05-Mar-2005 16-May-2006 18-Dec-2006 02-Apr-2007
Revision history
Revision Changes Complete document with curves document been reformatted Updates curves:Figure Figure Figure Figure been updated.
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STW45NM60
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