N-channel 0.08 TO-220/TO-220FP STripFETII Power MOSFET Type STP16

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N-channel 0.08 TO-220/TO-220FP STripFETII Power MOSFET Type STP16

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STP16NF06 STP16NF06FP
N-channel 0.08 TO-220/TO-220FP STripFETII Power MOSFET
Type STP16NF06 STP16NF06FP
VDSS
RDS(on) <0.1 <0.1
Exceptional dv/dt capability gate charge 100°C Application oriented characterization
TO-220
TO-220FP
Description
This Power MOSFET latest development STMicroelectronics unique "Single Feature SizeTM" strip-based process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP16NF06 STP16NF06FP Marking P16NF06 P16NF06 Package TO-220 TO-220FP Packaging Tube Tube
February 2007
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www.st.com
Contents
STP16NF06 STP16NF06FP
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuit
Package mechanical data Revision history
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STP16NF06 STP16NF06FP
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter TO-220 Value TO-220FP -2500 Max. operating junction temperature 11(1) 7.5(1) 44(1) 0.17 W/°C V/ns Unit
Drain-source voltage (VGS Gate- source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Derating factor
Ptot
dv/dt
Peak diode recovery voltage slope Single pulse avalanche energy Avalanche current, repetitive notrepetitive Insulation withstand voltage (DC) Storage temperature
VISO Tstg
Current limited package's thermal resistance
Pulse width limited safe operating area. 16A, di/dt 200A/µs, V(BR)DSS, TJMAX Starting
Table
Thermal data
TO-220 TO-220FP 62.5 °C/W °C/W
Rthj-case Rthj-amb
Thermal resistance junction-case Thermal resistance junction-ambient Maximum lead temperature soldering purpose
3.33
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Electrical characteristics
STP16NF06 STP16NF06FP
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS Gate-body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions 250µA, ratings ratings, 125°C VGS, 250µA 10V, 0.08 Min. ±100 Typ. Max. Unit
IDSS
IGSS VGS(th) RDS(on)
Table
Symbol Ciss Coss Crss td(on) td(off)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions 15V, Min. Typ. Max. Unit
25V, 1MHz,
30V, (see Figure 48V, 16A, (see Figure
Pulsed: Pulse duration duty cycle 1.5%.
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STP16NF06 STP16NF06FP
Electrical characteristics
Table
Symbol ISDM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage 16A, Test conditions Min. Typ. Max. Unit
15A, Reverse recovery time di/dt 100A/µs, Reverse recovery charge 30V, 150°C Reverse recovery current (see Figure
Pulse width limited safe operating area. Pulsed: Pulse duration duty cycle 1.5%
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Electrical characteristics
STP16NF06 STP16NF06FP
Figure
Electrical characteristics (curves)
Safe operating area TO-220 Figure Thermal impedance TO-220
Figure
Safe operating area TO-220FP
Figure
Thermal impedance TO-220FP
Figure
Output characteristics
Figure
Transfer characteristics
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STP16NF06 STP16NF06FP Figure Transconductance Figure
Electrical characteristics Static drain-source resistance
Figure
Gate charge gate-source voltage Figure Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
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Electrical characteristics Figure Source-drain diode forward characteristics
STP16NF06 STP16NF06FP Figure Normalized BVDSS temperature
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STP16NF06 STP16NF06FP
Test circuit
Test circuit
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped Inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
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Package mechanical data
STP16NF06 STP16NF06FP
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
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STP16NF06 STP16NF06FP
Package mechanical data
TO-220FP MECHANICAL DATA
MIN. 0.45 0.75 1.15 1.15 4.95 28.6 15.9 30.6 10.6 16.4 1.126 .0385 0.114 0.626 0.354 0.118 MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM.
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Package mechanical data
STP16NF06 STP16NF06FP
TO-220 MECHANICAL DATA
DIM. MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
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STP16NF06 STP16NF06FP
Revision history
Revision history
Table
Date 09-Sep-2004 28-Jun-2005 21-Jul-2005 09-Aug-2006 20-Feb-2007
Revision history
Revision Preliminary version Complete version ECOPACK label inserted template, content change Typo mistake page Changes
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STP16NF06 STP16NF06FP
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N-channel 0.08 TO-220/TO-220FP STripFETII Power MOSFET Type STP16

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