N-channel 0.045 SO-8 STripFETPower MOSFET Type STS4DNF60L VD
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STS4DNF60L
N-channel 0.045 SO-8 STripFETPower MOSFET
Type STS4DNF60L
VDSS
RDS(on) <0.055
Standard outline easy automated surface mount assembly threshold drive
SO-8
Application
Switching applications
Description
This Power MOSFET latest development STMicroelectronics unique "single feature size" strip-based pocess. resulting transistor shows extremely high packing density onresistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. Figure Internal schematic diagram
Table
Device summary
Marking 4DF60L Package SO-8 Packaging Tape reel
Order code STS4DNF60L
August 2007
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www.st.com
Contents
STS4DNF60L
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuits
Package mechanical data Revision history
2/12
STS4DNF60L
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage (VGS Gate- source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Operating junction temperature Storage temperature Value Unit
PTOT(2) Tstg
Pulse width limited safe operating area Ptot=1.6W Single Operation
Table
Symbol
Thermal data
Parameter Value 62.5 Unit °C/W
Rthj-pcb Thermal resistance junction-pcb D.O.(1)
When mounted FR-4 board, 10sec, dual operation
3/12
Electrical characteristics
STS4DNF60L
Electrical characteristics
(Tcase 25°C unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
/off states
Parameter Drain-source breakdown voltage Test conditions 250µA, Min. 0.045 0.050 0.055 0.065 Typ. Max. Unit
rating Zero gate voltage drain current (VGS rating, TC=125°C Gate-body leakage current (VDS
Gate threshold voltage VGS, 250µA Static drain-source resistance 10V, 4.5V,
Table
Symbol Ciss Coss Crss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions =25V, Min. Typ. 1030 Max. Unit
MHz,
48V, 4.5V (see Figure
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STS4DNF60L
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions 30V, 2.2A, 4.7, (see Figure 30V, 2.2A, 4.7, (see Figure Min. Typ. Unit
Table
Symbol ISDM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current di/dt 100A/µs 20V, 25°C (see Figure Test conditions Min. Typ. Max. Unit
Pulse width limited safe operating area Pulsed: Pulse duration duty cycle
5/12
Electrical characteristics
STS4DNF60L
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characterisics
Figure
Transfer characteristics
Figure
Source-drain diode forward characteristics
Figure
Static drain-source resistance
6/12
STS4DNF60L Figure Gate charge gate-source voltage Figure
Electrical characteristics Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
7/12
Test circuits
STS4DNF60L
Test circuits
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped Inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
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STS4DNF60L
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
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Package mechanical data
STS4DNF60L
SO-8 MECHANICAL DATA
DIM. 1.27 3.81 1.27 (max.) 0.14 0.015 0.65 0.35 0.19 0.25 MIN. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
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STS4DNF60L
Revision history
Revision history
Table
Date 30-May-2005 29-Mar-2006 16-May-2006 29-Aug-2007
Document revision history
Revision Initial electronic version Modified Figure Figure Modified internal schematic diagram Marking been updated Changes
11/12
STS4DNF60L
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