N-channel 0.054 TO-247 second generation MDmeshPower MOSFET Type

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N-channel 0.054 TO-247 second generation MDmeshPower MOSFET Type

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STW54NM65N
N-channel 0.054 TO-247 second generation MDmeshPower MOSFET
Type STW54NM65N
VDSS (@Tjmax)
RDS(on) 0.065
100% avalanche tested input capacitance gate charge gate input resistance TO-247
Application
Switching applications
Description
This series devices designed using second generation MDmeshtechnology. This revolutionary Power MOSFET associates vertical structure Company's strip layout yield world's lowest on-resistance gate charge. therefore suitable most demanding high efficiency converters. Figure Internal schematic diagram
Table
Device summary
Marking 54NM65N Package TO-247 Packaging Tube
Order code STW54NM65N
July 2008
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www.st.com
This preliminary information product development undergoing evaluation. Details subject change without notice.
Contents
STW54NM65N
Contents
Electrical ratings Electrical characteristics Test circuit
Package mechanical data Revision history
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STW54NM65N
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage (VGS Gate- source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 31.5 Unit V/ns
PTOT dv/dt
Tstg
Pulse width limited safe operating area di/dt A/µs, V(BR)DSS
Table
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-ambient Maximum lead temperature soldering purpose Value 0.36 Unit °C/W °C/W
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited max) Single pulse avalanche energy (starting IAS, Value Unit
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Electrical characteristics
STW54NM65N
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table
Symbol V(BR)DSS dv/dt IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS Gate-body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions 1mA, VDD= rating rating, @125 VGS, Min. Typ. Max. Unit V/ns
0.054 0.065
Characteristic value turn inductive load
Table
Symbol Ciss Coss Crss Coss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS=15 MHz, Min. Typ. 6000 Max. Unit
(see Figure gate bias=0 Test signal level open drain
Pulsed: Pulse duration duty cycle Coss defined constant equivalent capacitance giving same charging time Coss when increases from
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STW54NM65N
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions (see Figure Min. Typ. Max. Unit
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs (see Figure di/dt A/µs (see Figure Test conditions Typ. Unit
IRRM IRRM
Pulse width limited safe operating area Pulsed: Pulse duration duty cycle
Figure
Normalized breakdown voltage temperature
5/10
Test circuit
STW54NM65N
Figure
Test circuit
Switching times test circuit resistive load Figure Gate charge test circuit
Figure
Test circuit inductive load Figure switching diode recovery times
Unclamped Inductive load test circuit
Figure
Unclamped inductive waveform
Figure
Switching time waveform
6/10
STW54NM65N
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
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Package mechanical data
STW54NM65N
TO-247 Mechanical data
Min. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim.
8/10
STW54NM65N
Revision history
Revision history
Table
Date 24-Jul-2008
Document revision history
Revision Initial release Changes
9/10
STW54NM65N
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N-channel 0.054 TO-247 second generation MDmeshPower MOSFET Type

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