N-channel 0.047 TO-247 FDmeshII Power MOSFET (with fast diode) Ty

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N-channel 0.047 TO-247 FDmeshII Power MOSFET (with fast diode) Ty

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STW55NM60ND
N-channel 0.047 TO-247 FDmeshII Power MOSFET (with fast diode)
Type STW55NM60ND
VDSS (@TJmax)
RDS(on) (max) 0.060
worldwide best RDS(on) amongst fast recovery diode devices TO-247 100% avalanche tested input capacitance gate charge gate input resistance High dv/dt avalanche capabilities
TO-247
Application
Switching applications
Figure
Internal schematic diagram
Description
FDmeshII series belongs second generation MDmeshtechnology. This revolutionary Power MOSFET associates vertical structure company's strip layout associates advantages reduced onresistance fast switching with intrinsic fastrecovery body diode.It therefore strongly recommended bridge topologies, particular phase-shift converters.
Table
Device summary
Marking 55NM60ND Package TO-247 Packaging Tube
Order code STW55NM60ND
April 2008
1/12
www.st.com
Contents
STW55NM60ND
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuits
Package mechanical data Revision history
2/12
STW55NM60ND
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage (VGS Gate- source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Total dissipation Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value Unit V/ns
PTOT dv/dt(2) Tstg
Pulse width limited safe operating area di/dt A/µs, V(BR)DSS
Table
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-ambient Maximum lead temperature soldering purpose Value 0.36 Unit °C/W °C/W
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive notrepetitive (pulse width limited max) Single pulse avalanche energy (starting IAS, value Unit
3/12
Electrical characteristics
STW55NM60ND
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table
Symbol V(BR)DSS dv/dt IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS Gate-body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions VDD=480 rating rating @125 VGS, 25.5 0.047 Min. 0.060 Typ. Max. Unit V/ns
Characteristic value turn inductive load
Table
Symbol Ciss Coss Crss Coss eq.(2) td(on) td(off)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions 25.5 MHz, Min. Typ. 5800 Max. Unit
25.5 (see Figure 19), (see Figure (see Figure Gate Bias Test signal level Open drain
Pulsed: pulse duration= duty cycle 1.5% Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
4/12
STW55NM60ND
Electrical characteristics
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs (see Figure A,VDD di/dt A/µs, (see Figure Test conditions Min. Typ. Max. Unit
Pulse width limited safe operating area Pulsed: Pulse duration duty cycle 1.5%.
5/12
Electrical characteristics
STW55NM60ND
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Transconductance
Figure
Static drain-source resistance
6/12
STW55NM60ND Figure Gate charge gate-source voltage Figure
Electrical characteristics Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source-drain diode forward characteristics
Figure Normalized BVDSS temperature
7/12
Test circuits
STW55NM60ND
Test circuits
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped Inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
8/12
STW55NM60ND
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect. category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com.
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Package mechanical data
STW55NM60ND
TO-247 Mechanical data
Min. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim.
10/12
STW55NM60ND
Revision history
Revision history
Table
Date 16-Nov-2007 22-Apr-2008
Document revision history
Revision First release. Document status promoted from preliminary data datasheet. Changes
11/12
STW55NM60ND
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N-channel 0.047 TO-247 FDmeshII Power MOSFET (with fast diode) Ty

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